ON Semiconductor BF421 BF423 High Voltage Transistors PNP Silicon MAXIMUM RATINGS Rating Symbol BF421 BF423 Unit Collector-Emitter Voltage VCEO -300 -250 Vdc Collector-Base Voltage VCBO -300 -250 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current -- Continuous IC -500 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 1 2 CASE 29-11, STYLE 14 TO-92 (TO-226AA) COLLECTOR 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W 3 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic 3 Min Max -300 -250 -- -- -300 -250 -- -- -5.0 -5.0 -- -- -- -- -0.01 -- -- -- -100 -- Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (1) (IC = -1.0 mAdc, IB = 0) V(BR)CEO BF421 BF423 Collector-Base Breakdown Voltage (IC = -100 Adc, IE = 0) Vdc V(BR)CBO BF421 BF423 Emitter-Base Breakdown Voltage (IE = -100 Adc, IC = 0) Vdc V(BR)EBO BF421 BF423 Collector Cutoff Current (VCB = -200 Vdc, IE = 0) Vdc Adc ICBO BF421 BF423 Emitter Cutoff Current (VEB = -5.0 Vdc, IC = 0) IEBO BF421 BF423 nAdc 1. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 2 1 Publication Order Number: BF421/D BF421 BF423 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Max 50 50 -- -- Unit ON CHARACTERISTICS DC Current Gain (IC = -25 mA, VCE = -20 Vdc) hFE BF421 BF423 -- Collector-Emitter Saturation Voltage (IC = -20 mAdc, IB = -2.0 mAdc) VCE(sat) -- -0.5 Vdc Base-Emitter Saturation Voltage (IC = -20 mA, IB = -2.0 mA) VBE(sat) -- -2.0 Vdc fT 60 -- MHz Cre -- 2.8 pF SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = -10 mAdc, VCE = -10 Vdc, f = 20 MHz) Common Emitter Feedback Capacitance (VCB = -30 Vdc, IE = 0, f = 1.0 MHz) http://onsemi.com 2 BF421 BF423 300 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125C 250 200 25C 150 -55C 100 50 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Cib @ 1MHz 10 Ccb @ 1MHz f, T CURRENT-GAIN C, CAPACITANCE (pF) 100 BANDWIDTH (MHz) Figure 1. DC Current Gain 1.0 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 150 130 110 90 70 50 30 10 1000 TJ = 25C VCE = 20 Vdc F = 20 MHz 1 Figure 2. Capacitance 3 5 11 13 15 7 9 IC, COLLECTOR CURRENT (mA) 17 19 21 Figure 3. Current-Gain -- Bandwidth 1.4 V, VOLTAGE (VOLTS) 1.2 VCE(sat) @ 25C, IC/IB = 10 VCE(sat) @ 125C, IC/IB = 10 VCE(sat) @ -55C, IC/IB = 10 VBE(sat) @ 25C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125C, IC/IB = 10 VBE(sat) @ -55C, IC/IB = 10 VBE(on) @ 25C, VCE = 10 V VBE(on) @ 125C, VCE = 10 V VBE(on) @ -55C, VCE = 10 V 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. "ON" Voltages http://onsemi.com 3 BF421 BF423 PACKAGE DIMENSIONS CASE 029-11 (TO-226AA) ISSUE AJ A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X-X 1 N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- N STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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