High Voltage Transistors
PNP Silicon
MAXIMUM RATINGS
Rating Symbol BF421 BF423 Unit
Collector–Emitter Voltage VCEO –300 –250 Vdc
Collector–Base Voltage VCBO –300 –250 Vdc
Emitter–Base V oltage VEBO –5.0 Vdc
Collector Current — Continuous IC–500 mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD625
5.0 mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD1.5
12 Watts
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RJA 200 °C/W
Thermal Resistance, Junction to Case RJC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (1)
(IC = –1.0 mAdc, IB = 0) BF421
BF423
V(BR)CEO –300
–250 —
—
Vdc
Collector–Base Breakdown Voltage
(IC = –100 Adc, IE = 0) BF421
BF423
V(BR)CBO –300
–250 —
—
Vdc
Emitter–Base Breakdown Voltage
(IE = –100 Adc, IC = 0) BF421
BF423
V(BR)EBO –5.0
–5.0 —
—
Vdc
Collector Cutoff Current
(VCB = –200 Vdc, IE = 0) BF421
BF423
ICBO —
—–0.01
—
Adc
Emitter Cutoff Current
(VEB = –5.0 Vdc, IC = 0) BF421
BF423
IEBO —
—–100
—
nAdc
1. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%.
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 2 1Publication Order Number:
BF421/D
BF421
BF423
CASE 29–11, STYLE 14
TO–92 (TO–226AA)
123
COLLECTOR
2
3
BASE
1
EMITTER
BF421 BF423
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –25 mA, VCE = –20 Vdc) BF421
BF423
hFE 50
50 —
—
—
Collector–Emitter Saturation Voltage
(IC = –20 mAdc, IB = –2.0 mAdc) VCE(sat) — –0.5 Vdc
Base–Emitter Saturation Voltage
(IC = –20 mA, IB = –2.0 mA) VBE(sat) — –2.0 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –10 Vdc, f = 20 MHz) fT60 — MHz
Common Emitter Feedback Capacitance
(VCB = –30 Vdc, IE = 0, f = 1.0 MHz) Cre — 2.8 pF
BF421 BF423
http://onsemi.com
3
Figure 1. DC Current Gain
Figure 2. Capacitance
IC, COLLECTOR CURRENT (mA)
150
90
70
50
30
10
TJ = 25°C
VCE = 20 Vdc
F = 20 MHz
f, CURRENT-GAIN BANDWIDTH (MHz)
T
1
Figure 3. Current–Gain — Bandwidth
130
21
C, CAPACITANCE (pF)
VR, REVERSE VOLTAGE (VOLTS)
0.1
100
0.1
10
1.0 10 1000
Cib @ 1MHz
100
1.0
Ccb @ 1MHz
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
1.4
0.0
1.2
1.0
0.8
0.6
0.4
0.2
100100.1 1.0
110
3579 1917151311
VBE(on) @ 25°C, VCE = 10 V
VCE(sat) @ 25°C, IC/IB = 10
VBE(sat) @ 25°C, IC/IB = 10
VCE(sat) @ 125°C, IC/IB = 10
VCE(sat) @ -55°C, IC/IB = 10
VBE(sat) @ 125°C, IC/IB = 10
VBE(sat) @ -55°C, IC/IB = 10
VBE(on) @ 125°C, VCE = 10 V
VBE(on) @ -55°C, VCE = 10 V
Figure 4. ”ON” Voltages
IC, COLLECTOR CURRENT (mA)
300
0.1 1.0 10
250
200
150
0
hFE, DC CURRENT GAIN
TJ = +125°C
25°C
-55°C
VCE = 10 Vdc
100
50
100
BF421 BF423
http://onsemi.com
4
PACKAGE DIMENSIONS
CASE 029–11
(TO–226AA)
ISSUE AJ
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X–X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 --- 12.70 ---
L0.250 --- 6.35 ---
N0.080 0.105 2.04 2.66
P--- 0.100 --- 2.54
R0.115 --- 2.93 ---
V0.135 --- 3.43 ---
1
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
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BF421/D
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