Photo IC diode S7565 Linear current amplification photo IC for visible range The S7565 amplifies the photocurrents generated in the photodiode and provides adequate output current equal to that obtained from large active area photodiodes. This photo IC can be used in a wide range of applications involving visible light detection. Features Applications Visible light detection Energy saving sensor for TV and air conditioners, etc. Amplifies photocurrents about 1300 times Just as easy to use as a photodiode Absolute maximum ratings (Ta=25 C) Parameter Reverse voltage Photocurrent Forward current Power dissipation Operating temperature Storage temperature Soldering Symbol VR Max. IL IF P Topr Tstg - Value -0.5 to +16 10 10 250 * -10 to +60 -20 to +70 260 C, 3 s, at least 3.6 mm away from package surface Unit V mA mA mW C C - * Power dissipation decreases at a rate of 3.3 mW/C above Ta=25 C Electrical and optical characteristics (Ta=25 C, VR=5 V) Parameter Spectral response range Peak sensitivity wavelength Operating reverse voltage Dark current Photocurrent Rise time Fall time Symbol p VR ID IL tr tf Condition 0 lx 2856 K, 1000 lx 10 to 90 %, RL=10 k VR=7.5 V, =560 nm Min. 3 240 - Typ. 350 to 750 560 0.5 320 0.6 0.6 Max. 12 10 400 - Unit nm nm V nA A ms ms Rise/fall time measurement method Pulsed light from LED (=560 nm) 2.5 V 90 % VO 10 % 0.1 F 7.5 V tr tf VO Load resistance RL KPICC0053EA www.hamamatsu.com 1 Photo IC diode S7565 Spectral response Dark current vs. ambient temperature (Typ. Ta=25 C, VR=5 V) 1.0 (Typ. VR=5 V) 10 mA 1 mA 0.8 Dark current Relative sensitivity 100 nA 0.6 0.4 10 nA 1 nA 100 pA 10 pA 0.2 1 pA 0 200 400 600 800 100 fA -25 1000 0 25 50 75 100 Ambient temperature (C) Wavelength (nm) KPICB0040ED KPICB0039EA Rise/fall time vs. load resistance 100 (Typ. Ta=25 C, VR=5 V, =560 nm, Vo=2.5 V) Rise/fall time (ms) 10 1 0.1 0.01 100 1k 10 k 100 k 1M Load resistance () KPICB0041ED Operating circuit example Connect a bias power supply so that a positive voltage is applied to the cathode. To remove high-frequency components from the circuit, we recommend inserting a load capacitance (CL) for low-pass filter, in parallel with a load resistance (RL). The cut-off frequency (fc) is then given by The drawing surrounded by the dotted line shows a schematic diagram of the photo IC. Anode Cathode Cut-off frequency (fc) Reverse bias power supply Load resistance RL 1 2 CL RL Load capacitance CL for low-pass filter KPICC0018EA 2 Photo IC diode S7565 Dimensional outline (unit: mm) 2.02 0.2 16.5 1.0 (0.8) 0.55 0.45 5 2.0 (Depth 0.15 Max.) 3.6 Max. (1.0) 1.0 (Depth 0.15 Max.) 2.0 1.0 10 2.5 0.2 5.0 Visualcompensation filter (2.6 x 3.9 x 0.5 t) 5.2 0.3 (Including burr) 5.0 5.2 0.3 (Including burr) Center of active area 0.25 +0.15 -0.1 1.27 1.27 1.27 (Specified at the lead out) 10 5 0.75 0.15 Photosensitive surface Anode (Anode) NC Cathode Pin be connected to on the PC board. Tolerance unless otherwise noted: 0.1, 2 Shaded area indicates burr. Values in parentheses are not guaranteed, but for reference. Lead surface finish: silver plating Packing: polyethylene pack [anti-static type] (200 pcs/pack) KPICA0025EA Note: If excessive vibration is continuously applied to the glass filter, there is a risk that the filter may come off, so secure the glass filter with a holder. Use this device in a way that allows light to enter only through the filter. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. Type numbers of products listed in the specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)" which means developmental specifications. (c)2009 Hamamatsu Photonics K.K. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KPIC1040E03 Aug. 2009 DN 3