One of the parameters limiting the converter’s response to
a load transi ent is the ti me requ ired to change the i nductor
current. Gi ven a suffi ciently fast cont rol loop design, the
HIP6 005B w ill provi de eith er 0% or 100% dut y cycle i n
response to a load transient. The response time is the time
required t o slew the i nductor cur rent f rom an ini tial current
value to the tran sient curre nt level. Duri ng thi s inte rval the
differen ce between the induct or cur rent and t he tr ansient
current le vel must be supp lied by the ou tput capacit or.
Minimizing t he respo nse t ime can m inimi ze the out put
capacitance required.
The response tim e to a transient is different for the
appli cation of load and the removal of load . The fo ll owing
equation s give the approxi m ate resp onse time interval for
appli cation and removal of a tr ansient load:
w here: ITRAN is the transient load current step, tRISE is the
respons e time to the appl ication of l oad, and t FALL is the
respons e tim e to the removal of lo ad. Wit h a +5V input
source, the worst case res ponse ti me ca n be eith er at the
applicat ion or re mova l of load and dependent upon the
DACOUT setting. Be sure to check both of these equations
at the minimum and m axi mum out put l evels fo r the worst
case response time. With a +12V input, and output voltage
level equal to DACOUT, tFALL is the longest response time.
Input Capacitor Selection
Use a mix of input bypass capacitors to control the voltage
overshoot across the MOSFETs. Use small ceramic capacitors
for high frequency decoupling and bulk capacitors to supply the
current needed each time Q1 turns on. Place the small ceramic
capacitors physically close to the MOSFETs and between the
drain of Q1 and the anode of Schottky diode D2.
The imp ortant parame ters for the bulk i nput capac itor ar e
the voltage r atin g and the RM S cur rent r atin g. For reliable
operation, select the bulk capaci tor wit h voltage and
current rat ings above t he m aximum input volta ge and
largest RM S cur rent re quir ed by the ci rcuit. The ca paci tor
voltage rating shoul d be at least 1.25 times greater than the
maximum input vo ltage and a voltage r ating of 1.5 time s is
a conserva tive gu ideline. The RMS curr ent rating
requireme nt for the input capacitor of a buck regu lator i s
appr oximatel y 1/2 t he DC load c urrent .
For a through hole design, several electr olytic capacitors
(Panasonic HFQ series or Nichicon PL seri es or Sanyo MV-GX
or equivalent) may be needed. For surface mount designs,
solid t antalum capacitors can be used, but caution must be
exercised with regard to the capacitor surge current rat ing.
These capacitors must be capable of handling the surge-
current at power-up. The TPS series available from AVX, and
the 593D series from Sprague are both surge cur rent t ested.
MOSFET Selectio n/Considerations
The HIP6005B requires an N-Channel power MOSFET. I t
should be selected based upon rDS(ON), gat e supp l y
requireme nts, and thermal management requirement s.
In high-current applications, the MOSFET power dissipation,
package selection and heatsink are the dominant design
factors. The power dissi pation includes two loss components;
conduction loss and switching loss. The conduction losses are
the largest component of power dissipat ion for the MOSFET.
Switching losses also contribut e to t he overall M OSFET power
loss (see the equations below). These equations assume linear
voltage-current transitions and are approximations. The gate-
charge losses are dissipated by the HIP6005B and do not heat
the MOSFET. However, lar ge gate-charge increases the
switching interval, tSW, which increases the upper MOSFET
switching losses. Ensure that the MOSFET is within its
maximum junction temperature at high ambient temperature by
calculating the t emperature rise accordi ng to package t hermal-
resistance specific ations. A separate heatsink may be
necessary depending upon MOSFET power, package type,
ambient temperature and air flow.
Wher e: D is the duty cycle = VOUT/VIN,
tSW is the swi tching int erval , and
FS is the switching frequen cy
Standar d-gate MOSFETs are normally recommended for
use wi th t he HIP6005B. However , lo gic-l evel gate MO SFETs
can be used und er speci al c ir cumstanc es. The i nput vol tage,
upper gate drive level, and the MOSFETs abso lute
gate-to-sour ce voltage rating determine whether logic-level
MOSFETs ar e appropriate.
Figure 9 shows the upper gate drive (BOOT pin) supplied by
a bootstrap circuit from VCC. The boot capacitor, CBOOT,
develops a f loating supply voltage referenced to the PHASE
pin. This supply is refreshed each cycle to a volt age of VCC
less the boot diode dr op (VD) when the Schottky diode, D2,
conducts. Logic- level MOSFETs can only be used if the
MOSFETs absolute gat e-to-source volt age rating exceeds
the maximum voltage applied to VCC.
Figure 10 shows the upper gate dr ive supplied by a direct
connection to VCC. This option should only be used in
converter systems where the main input volt age is +5VDC or
less. The peak upper gate-t o-source voltage i s approximately
VCC less the input supply. For +5V main power and +12VDC
for the bias, the gate-to-source voltage of Q1 is 7V. A logic-level
MOSFET is a good choice for Q1 under these conditions.
tRISE L x ITRAN
VIN VOUT
–
--------------------------------= tFALL L x I TRAN
VOUT
----------------------------=
PCOND = IO2 x rDS(ON) x D
PSW = 1/2 IO x VIN x tSW x FS
HIP6005B