110
TM HIP6005B
Buck Pulse-Width Modulator (PWM)
Controller and Output Voltage Monitor
The HIP6005B provides complete control and protection for
a DC-DC conver ter optimi zed for high-performance
micropro cessor appl ications. It is desi gned to drive an
N-Channel MOSFET in a standard buck t opology. The
HIP6005B integrates all of the control, output adjustment,
monitoring and prot ection functions into a singl e package.
The output voltage of the convert er i s easil y adjusted and
precisely regulated. The HIP6005B includes a fully
TTL-compatible 5-input digital-to-anal og converter (DAC)
that adjusts the output voltage from 1.3VDC to 2.05VDC in
0.05V i ncrem ents and from 2.1VDC to 3. 5VDC in 0. 1V steps.
The pr eci sion refer ence a nd v oltag e-mode regul ator hold the
selected output voltage to within ±1% over temperat ure and
li ne voltag e vari ati ons.
The HIP6005B provides simple, single feedback l oop, voltage-
mode control with fast transient response. It includes a 200kHz
free-running triangle-wave oscillator t hat is adjustable from
below 50kHz to over 1MHz. The error amplifier features a
15MHz gain-bandwidth product and 6V/µs slew rate which
enables high converter bandwidth for fast transient
performance. The resulting PWM duty ratio ranges from 0% to
100%.
The HIP6005B monitors the output voltage with a window
comparator that tracks the DAC output and issues a Power
Good signal when the out put is wit hin ±10%. The HI P6005B
protects against over- curren t and over-voltage condi tio ns by
inhibiting PWM operation. Additional built-in over-voltage
protection triggers an external SCR to crowbar the input
supply. The HIP6005B monitors the current by using the
rDS(ON) of th e upper MOSFET whi ch elimi nates t he need fo r
a current se nsing resistor.
Features
Drives N-Channel MOSFET
Operates from +5V or +12V Input
Simple Si ngle-Lo op Control Desi gn
- Vol tage-M ode PWM Cont rol
Fast Transient Response
- High-Bandwidth Error Amplifier
- Fu ll 0% to 100 % D u ty Ratio
Excellent Output Voltage Regulation
-±1% Over Line Volt age and Temperat ure
TTL-Compatible 5-Bit Digital-to-Analog Output Voltage
Selection
- Wide Range . . . . . . . . . . . . . . . . . . . 1.3VDC to 3.5VDC
- 0.1V Binary Steps . . . . . . . . . . . . . . 2.1VDC to 3.5VDC
- 0.0 5 V Bin a ry S te ps . . . . . . . . . . . . 1.3 V DC to 2. 05 VDC
Power-Good Output Volt age M onitor
Over-Voltage and O ver-Current Fault Monitors
- Does Not Require Extra Current Sensing Element,
Uses MOSFET’s rDS(ON)
Small Converter Si ze
- Consta nt Frequenc y Op eration
- 200kHz Free-Running Oscillator Programmable from
50kHz to over 1MHz
Applications
Power Suppl y for Pentium®, Pent ium Pro, Pentium II,
PowerPC™, K6™, 6X86™ and Alpha™ Microprocessor s
High-Power 5V to 3.xV DC-DC Regulators
Low-Voltage Distributed Power Supplies
Pinout
HIP6005B
(SOIC, TSSOP)
TOP VIEW
6X86™ is a trademark of Cyrix Corporation.
Alpha Micro™ is a trademark of Digital Computer Equipment Corporation
K6™ is a trademark of Advanced Micro Devices.
Pentium® is a registered trademark of Intel Corporation.
PowerPC™ is a registered trademark of IBM.
Ordering Information
PART NUMBER TEMP.
RANGE (oC) PACKAGE PKG.
NO.
HIP6005BCB 0 to 70 20 Ld SOIC M20.3
HI P 60 05 B CV 0 to 70 20 Ld T SS OP M 20 .173
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the TSSOP variant in tape and reel, e.g., HIP6005BCV-T.
11
12
13
14
15
16
17
18
20
19
10
9
8
7
6
5
4
3
2
1
VSEN
OCSET
SS
VID0
VID1
VID2
VID4
VID3
COMP
FB
RT
VCC
NC
NC
OVP
BOOT
UGATE
PHASE
PGOOD
GND
Data Sheet Februa ry 1999 FN4568. 2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-8 88-INTERSIL o r 321-724-7143 |Intersil (and design) is a trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2002. All Rights Reserved
Typical Application
Block Diagram
+
-
+
-
+12V
+VOUT
HIP6005B
VSEN
RT
FB
COMP
SS
PGOOD
GND
MONITOR AND
PROTECTION
OSC UGATE
OCSET
PHASE
BOOT
VCC VIN = +5V OR +12V
OVP
VID0
VID1
VID2
VID3 D/A
VID4
D/A
CONVERTER
(DAC)
OSCILLATOR
SOFT-
START
REFERENCE
POWER-ON
RESET (POR)
115%
110%
90%
INHIBIT
PWM
COMPARATOR
ERROR
AMP
VCC
PGOOD
SS
PWM
OVP
RT GND
VSEN
OCSET
VID0
VID1
VID2
VID3
FB
COMP
DACOUT
OVER-
VOLTAGE
OVER-
CURRENT
GATE
CONTROL
LOGIC
BOOT
UGATE
PHASE
200µA
10µA
4V
+
-
+
-+
-
VID4
+
-
+
-
+
-
HIP6005B
Absolute Maximum Ratings Thermal Information
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+15V
Boot Voltage , VBOOT - VPHASE . . . . . . . . . . . . . . . . . . . . . . . .+15V
Input, Output or I/O Voltage. . . . . . . . . . . .GND -0.3V to VCC +0.3V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Class 2
Ope rat i ng Condi tio ns
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . +12V ±10%
Ambient Temperature Range. . . . . . . . . . . . . . . . . . . . . 0oC to 70oC
Thermal Resistance (Typical, Note 1) θJA (oC/W)
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
SOIC Package (with 3in2 of Copper). . . . . . . . . . . . 86
TSSOP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . 140
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . 300oC
(L ea d Tips Onl y)
CAUTIO N: S tresses abov e those l isted i n “ A bsolute Max imum Ra ting s” ma y cause per manen t dam age to th e de vice. This is a s tress on l y rating and ope ration of th e
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is me asured with the compon ent mou nted on a n evaluation PC board in free air.
Electrical Speci fications Recommended Operating Conditions, Unless Oth erwise Noted
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
VCC S UP PLY CURRENT
Nominal Supply ICC UGA TE Open - 5 - mA
POWER-ON RESET
Rising VCC Threshold VOCSET = 4.5V - - 10.4 V
F al lin g VCC Threshold VOCSET = 4.5V 8.2 - - V
Rising VOCSET Th res ho ld -1.26- V
OSCILLATOR
Free Running Frequency RT = Open 185 200 215 kHz
T ota l Vari atio n 6k < RT to GND < 200k-15 - +15 %
Ramp Amplitude VOSC RT = Open - 1.9 - VP-P
REFERENCE AND DAC
DAC (VID0-VID4) Input Low Voltage --0.8V
DAC (VID0-VID4) Input High Voltage 2.0 - - V
DACOUT Voltage Accuracy -1.0 - +1.0 %
ERROR AMPLIFIER
DC Gain -88- dB
Ga in - Ban dw idt h Pr od uc t GBW - 15 - M H z
Slew Rate SR COMP = 10pF - 6 - V/µs
GATE DRIVER
Upper Gate So urce IUGATE VBOOT - VPHASE = 12V, VUGATE = 6V 350 500 - mA
Upper Gate Si nk RUGATE -5.510 W
PROTECTION
Over-Voltage Trip (VSEN/DACOUT) -115120 %
OCSET Current Source IOCSET VOCSET = 4.5V 170 200 230 µA
OVP Sourcing Current IOVP VSEN = 5.5V; VOVP = 0V 60 - - mA
Soft Start Current ISS -10- µA
POWER GOOD
Upper Threshold (VSEN/DACOUT) VSEN Rising 106 - 111 %
Lower Threshold (VSEN/DACOUT) VSEN Falling 89 - 94 %
Hysteresis (VSEN/DAC OU T) Upp er and Lo w er T h res ho ld - 2 - %
PGOOD Voltage Low VPGOOD IPGOOD = -5mA - 0.5 - V
HIP6005B
Functional Pin Description
VSEN (Pin 1)
This pin is connected to the converter s output volt age. The
PGOOD and OVP comparator cir cui ts use this signal to
report output voltage status and for overvoltage prot ection.
OCSET (Pin 2)
Connect a resis tor (ROCSET) from this pin to the drain of the
upper MOSFET. ROCSET, an intern al 200µA current s ource
(IOCS), and the upper MOSFET on-r esistance (rDS(ON)) set
the converter over-current (OC) trip point accor ding to the
following equation:
An over-current trip cycles the soft-start functi on.
SS ( P in 3)
Connect a capacitor from this pin to ground. This capacitor,
along with an internal 10µA current source, sets the
soft-start interval of the converter.
VID0-4 (Pins 4-8)
VID0-4 are t he input pins to the 5- bit DAC. The states of
these five pins program the internal voltage reference
(DACOUT). The level of DACOUT sets t he converter output
volt age. It also sets the PGOOD and OVP thre sholds. Table
1 specifies DACOUT for the 32 combi nations of DAC inp uts.
COMP (Pin 9) and FB (Pin 10)
COMP and FB are t he available ext ernal pi ns of the error
amplifier. The FB pin is the inv erting input of the error
amplifier and the COMP pin is the error amplifier output .
These pins are used to compensate the volt age-cont rol
feedback loop of the conve rter.
GND (Pin 11)
Signal ground for the IC. All voltage levels are measu red
with respect to this pin.
PGOOD (Pin 12)
PGOOD is an open collector output used to indicate the
status of the converter output voltage. This pin is pull ed low
when the converter output is not within ±10% of t he
DACOUT refer ence voltage. Except ion to this behavi or is the
‘1111 1’ VID pin combi nati on which di sables t he convert er; in
this case PGOOD asserts a high level.
PHASE (Pin 13)
Connect the PHASE pin to the upper MOSFET sourc e. Thi s
pin is used to monitor the voltage drop across the MOSFET
for over-current protecti on. Thi s pin also provides the return
path for the upper gate driv e.
UGATE (Pin 14)
Connect UGATE to the upper MOSFET gat e. This pin
provides the gat e dri ve for the upper MOSFET.
Typical Perfo rman ce Cu rves
FIGURE 1. RT RESISTANCE vs FREQUENCY FIGURE 2. BIAS SUPPLY CURRENT vs FREQUENCY
10 100 1000
SWITCHING FREQUENCY (kHz)
RESISTANCE (k)
10
100
1000 RT PULLUP
RT PULLDOWN TO VSS
TO +12V
100 200 300 400 500 600 700 800 900 1000
40
35
30
25
20
15
10
5
0
ICC (mA)
SWITCHING FREQUENCY (kHz)
CUGATE = 3300pF
CUGATE = 1000pF
CUGATE = 10pF
11
12
13
14
15
16
17
18
20
19
10
9
8
7
6
5
4
3
2
1
VSEN
OCSET
SS
VID0
VID1
VID2
VID4
VID3
COMP
FB
RT
VCC
NC
NC
OVP
BOOT
UGATE
PHASE
PGOOD
GND
IPEAK IOCSET x ROCSET
rDS ON()
-----------------------------------------------------=
HIP6005B
BOOT (Pin 15)
This pin provi des bias voltage to the upper MOSFET driver.
A bootstrap cir cuit may be use d to cre ate a BOOT v oltag e
suitable to drive a standard N-Channel MOSFET.
NC (Pin 16)
No connection.
NC (Pin 17)
No connection.
VCC (Pin 18)
Provide a 12V bias supply for th e chip to this pin.
OVP (Pin 19)
The OVP pin can be used to drive an ext ernal SCR in the
event of an overvolta ge condition. Output rising 15% more
than the DAC-set voltage triggers a high output on this pi n
and disables PWM gate drive ci rcuitry.
RT (Pin 20)
This pin provides osc il lato r swi tching frequenc y adjustment.
By placi ng a resistor (RT) from this pin to GND, the nominal
200kHz switc hing frequency is increase d according to the
following equation:
Conversely, connecting a pull-up r esistor (RT) from th is pi n
to VCC reduces the switchi ng freq uency according to th e
following equation:
Functional Description
Initialization
The HIP6005B automatically initializes upon receipt of power.
Special sequencing of the i nput suppl ies i s not necessary. The
Power-On Reset (POR) func tion continually m onitors the i nput
supply vol tages. The POR monitors the bi as voltage at t he VCC
pin and the input voltage (VIN) on the OCSET pin. The level on
OCSET is equal to VIN less a fi xed volt age drop (see over-
current protection). The POR function ini tiates soft start
operation after both input supply voltages exceed their POR
thresholds. For operation with a single +12V power source, VIN
and VCC are equivalent and the +12V power source must
exceed the rising VCC t hreshold before POR initiat es oper ation.
Soft St a rt
The POR function initiates the soft start sequence. An internal
10µA current source char ges an external capacitor (CSS) on
the SS pin to 4V. Soft start clamps the error amplifier output
(COMP pin) and reference input (+ terminal of error amp) to
the SS pin voltage. Figure 3 shows the soft start interval with
CSS = 0.1µF. Initially the clamp on the error amplifier (COMP
pin) control s the converter’s output voltage. At t1 in Figure 3,
the SS voltage reaches the valley of the oscillator’s triangle
wave. The oscillator’s triangular waveform is compared to the
ramping error amplifier voltage. This generates PHASE
pulses of increasing width that charge the output capacitor(s).
This interval of i ncreasing pulse wi dth continue s to t2. With
sufficient output voltage, the clamp on the reference input
con t rol s th e o utp ut vo l tag e. Th i s is th e i n ter val bet we en t2 and
t3 in Figure 3. At t3 the SS voltage exceeds the DACOUT
voltage and the output voltage is in regulation. This method
provides a rapid and controlled output volt age rise. The
PGOOD signal toggles ‘ high’ when the output volt age (VSEN
pin) is within ±5% of DACOUT. The 2% hy steresi s buil t i nto
th e pow er good comparator s pre vents P GOOD osc illation due
to nominal output voltage ripple.
Ove r- Current Protect i on
The over-current function protects the conver ter from a
shorted output by using the upper MO SFET’s on-res istance,
rDS(ON) to monitor the current. This method enhances the
converte r’s efficiency and reduc es cost by eliminating a
current sensing resistor.
Fs 200kHz 5 x 106
RTk()
---------------------+(RT to GN D )
Fs 200kHz 4 x 107
RTk()
---------------------(RT to 12 V)
0V
0V
0V
TIME (5ms/DIV.)
SOFT-START
(1V/DIV.)
OUTPUT
(1V/DIV.)
VOLTAGE
t2t3
PGOOD
(2V/DIV.)
FIGURE 3. SOFT START INTERVAL
t1
OUTPUT INDUCTOR SOFT-START
0A
0V
TIME (20ms/DIV.)
5A
10A
15A
2V
4V
FIGURE 4. OVER-CURRENT OPERATION
HIP6005B
The over-current function cycles the soft-start function in a
hiccup mode to provide fault protection. A resistor (ROCSET)
programs the over-current trip level. An internal 200µA current
sink develops a voltage across ROCSET that is referenced to
VIN. When the voltage across the upper MOSFET (also
referenced to VIN) exceeds the voltage across ROCSET, the
over-current function initiates a soft-start sequence. The soft-
start function discharges CSS with a 10µA current sink and
inhibits PWM operation. The soft-start function recharges
CSS, and PWM operation resumes with the error amplifier
clamped to the SS voltage. Should an overload occur while
recharging CSS, the soft start function inhibits PWM operation
while fully charging CSS to 4V to complete its cycle. Figure 4
sho ws t his op era ti on wit h an over lo ad co ndi t io n. No t e tha t th e
inductor current increases to over 15A during the CSS
charging interval and causes an over-current trip. The
converter dissipates very little power with this method. The
measured input power for the conditions of Figure 4 is 2.5W.
The over-current function wil l trip at a peak inductor current
(IPEAK) determi ned by:
where IOCSET is the int ernal O C SET curren t source (200µA
typi cal). The OC trip point varies mainly due to the
MOSFET’s rDS(ON) vari ation s. To avoid over-cur rent
tri pping i n the normal operating l oad r ange, find t he ROCSET
resistor from the equation above with:
1. The maximum rDS(ON) at the highest junction temperature.
2. The mini m um IOCSET from the specification table.
3. Det ermine IPEAK for ,
where I is the output inductor ripple cu rrent.
For an equation for the ripp le current see the section under
com ponent gui delines ti tl ed “Output Inductor Select ion.”
A small cer am ic capacitor should be placed in parallel with
ROCSET to smoot h the voltage across ROCSET in the
presence of switchi ng noise on the input volta ge.
Out put Volt age P rogram
The out put voltage of a HIP6005B converter is pr ogrammed
to disc ret e levels between 1.8VDC and 3.5VDC. The voltage
identifi cation (VID) pins progra m an internal voltage
reference (DACOUT) with a TTL-compat ible, 5- bit
digi tal-to -analog converter (DAC) . The level of DACOUT
also set s the PGOOD and OVP t hreshol ds. Ta ble 1 s peci fie s
the DACOUT volt age for the 32 dif ferent combinations of
connections on the VID pins. The output voltage should not
be adjus ted while the converter is deliver ing power. Remove
input power befor e changing the output volt age. Adjusting
the ou tpu t voltage dur ing oper ation could t oggle t he PGOOD
signal and exercise the overvoltage protection.
‘11111’ VID pin combination resulting in a 0V output setting
activates the Power-On Reset function and disables the gate
drive circuitry. For this specific VID combination, though,
PGOOD as ser ts a hi gh l eve l. Thi s unu sua l be hav ior has b een
implemented in order to allow for operation in
dual-microprocessor systems where AND-ing of the PGOOD
signals from two individual power converters is implemented.
Application Guidelines
Lay out C on s i derations
As in any high frequency switching converter, layout is very
important. Switching current from one power device to another
can generate voltage transients across the impedances of the
interconnecting bond wires and circuit traces. These
interconnecting impedances should be minimized by usi ng
wide, short printed circuit traces. The critical component s
should be located as close together as possible using ground
plane construction or single point grounding.
IPEAK IOCSET x ROCSET
rDS ON()
-----------------------------------------------------=
IPEAK IOUT MAX()
I()2+>
TABLE 1. OUTPUT VOLTAGE PROGRAM
PIN NAME NOMI NAL OUTP UT
VOLTAGE DACOUT PIN NAME NOMI NAL OUTPUT
VOLTAGE DACOUTVID4 VID3 VID2 VID1 VID0 VID4 VID3 VID2 VID1 VID0
01111 1.30 11111 0
01110 1.35 11110 2.1
01101 1.40 11101 2.2
01100 1.45 11100 2.3
01011 1.50 11011 2.4
01010 1.55 11010 2.5
01001 1.60 11001 2.6
01000 1.65 11000 2.7
00111 1.70 10111 2.8
00110 1.75 10110 2.9
00101 1.80 10101 3.0
00100 1.85 10100 3.1
00011 1.90 10011 3.2
00010 1.95 10010 3.3
00001 2.00 10001 3.4
00000 2.05 10000 3.5
NOTE: 0 = connected to GND or VSS, 1 = connected to VDD thro ugh pul l-u p resistors.
HIP6005B
Figure 5 shows the critical power components of the converter.
To minimize the voltage overshoot the interconnecting wires
indicated by heavy lines should be part of ground or power
plane in a print ed cir cuit board. The components shown in
Figure 6 should be locat ed as close together as possible.
Please note that the capaci tors CIN and CO each represent
numerous physical capacitors. Locate the HIP6005B within 3
inches of the M OSFET, Q1. The ci rcuit traces for the
MOSFET’s gate and source connections from the HIP6005B
must be sized to handle up to 1A peak current.
Figure 6 shows the cir cuit traces that r equire add it ional
layout con siderati on. Use single point and ground plane
construction for the ci rcuits shown. Minimize any leakage
current pat hs on the SS PIN and l ocate the capacitor, Css
close to the SS pin because the int ernal current sou rce is
only 10µA. Provide local VCC decoupling between VCC and
GND pins. Locate the capacitor, CBOOT as close as
practical to the BOOT and PHASE pins.
Feedback Compensation
Figure 7 highl ights t he voltage-mode control loop for a buck
convert er. The output voltage (VOUT) is r egulated to the
Reference vo lt age level. The error amplifi er (Error Amp)
output (VE/A) is com pared with the oscillator (OS C)
tri angula r wave to provide a pul se-width modulat ed (PWM )
wave w i th an ampli t ude of VIN at the PHASE node. The
PWM wave is smoothed by the output filter (LO and CO).
The modulator transfer function is the small-signal transfer
function of VOUT/VE/A. This funct ion is dominated by a DC
Gain and the output fi lter (LO and CO), with a double pol e
break frequency at FLC and a zero at FESR. The DC Gain of
the modul at or is simpl y the in put v oltag e (VIN) di vided by t he
peak-t o-peak oscillator voltage VOSC.
Modula tor Break Fr equ ency Equations
The compensation network consists of the error amplif ier
(internal to the HIP6005B) and the impedance networks ZIN
and ZFB. The goal of the compensation network is to provide a
closed loop transfer functi on with the hi ghest 0dB crossi ng
frequency (f0dB) and adequate phase margin. Phase margin is
the difference between the closed l oop phase at f0dB and 180
degrees. The equations below relate the compensation
network’s poles, zeros and gain t o the components (R1, R2,
R3, C1, C2, and C3) in Figure 8. Use these gui delines for
locating the poles and zeros of the compensation network:
1. Pi ck Gain ( R2/R1) for desired converter bandwidth.
2. Place 1ST Zero Below Filter’s Double Pole (~75% FLC).
3. Pl ace 2ND Zero at Filter’ s Double Pole.
4. Pl ace 1ST Pole at the ESR Zero.
5. Pl ace 2ND Pole at Half the Switching Frequency.
6. Check Gain against Error Amplifier’s Open- Loop Gain.
7. Estim ate Phase Marg in - Repeat if Neces sary.
LO
CO
UGATE
PHASE
Q1
D2
VIN
VOUT
RETURN
HIP6005B
CIN
LOAD
FIGURE 5. PRINTED CIRCUIT BOARD POWER AND GROUND
PLANES O R ISLAN DS
HIP6005B
SS
GND
VCC
BOOT D1LO
CO
VOUT
LOAD
Q1
D2
PHASE
FIGURE 6. PRINTED CIRCUIT BOARD SMALL S IGNAL
LA YOUT G UIDEL IN ES
+VIN
CBOOT
CVCC
CSS
+12V
VOUT
OSC
REFERENCE
LO
CO
ESR
VIN
VOSC
ERROR
AMP
PWM DRIVER
(PARASITIC)
FIGURE 7. VOLTAGE-MODE BUCK CONVERTER
COMPENSATION DESIGN
ZIN
ZFB
DACOUT
R1
R3
R2C3
C2
C1
COMP
VOUT
FB
ZFB
HIP6005B
ZIN
COMPARATOR
DETAILED COMPENSATION COMPONENTS
VE/A
+
-
+
-
+
-PHASE
FESR 1
2π x (ESR x CO)
------------------------------------------------=
FLC 1
2π x L O x C O
------------------------------------------=
HIP6005B
Compensa tion Break Fr equency Equ ations
Figure 8 shows an asymptotic plot of the DC-DC converter’s
gain vs frequency. The actual Modulator Gain has a high gain
peak due to the high Q factor of the output filter and is not
shown in Figure 8. Using the above guidelines should give a
Compensation Gain similar to the curve plotted. The open
loop error am plif ier gain bounds the co m pensation g ain.
Check the compensation gain at FP2 wi th the capa bilitie s of
the error amplifier. The Closed Loop Gai n is construc ted on
th e l og- lo g g r aph o f Fig ure 8 b y a dd ing the Mo du lat o r Gai n (i n
dB) to the Compensati on Gain (in dB). This is equivalent to
multiplying the modulator transfer function to the
com pensation transfer f unction and plotting the gain.
The com pensation gain uses external impedance networks
ZFB and ZIN to p rovide a stabl e, high ban dwidth (BW)
overal l loop. A stable control loop has a gain crossing with
-20dB/dec ade slope and a phase margin greater than 45
degrees. Include wor st case component variations when
determining phase margin.
Component Selectio n Guidelines
Output Cap acitor Selection
An output capacitor is required t o filter the output and sup ply
the l oad transient cur rent. The filtering requirements are a
function of t he switching frequency and the ripple current.
The load transient requiremen ts are a functi on of the slew
rate (di/ dt) and the magnitude of the transient load cur rent.
These requirements are generally met wi th a mix of
capacitors and careful layout.
Modern microprocessors produce transient load rates above
1A/ns. High frequency capacitors initially supply the transient
and slow the current load rate seen by the bulk capacitors.
The bulk filter capacitor values are generally determined by
the ESR (Effective Series Resistance) and voltage rating
requirements rather than actual capacitance requirements.
High fr equency decoupling capacit ors should be placed as
clos e to the po wer pins o f t he load as p hysical ly pos si ble. Be
careful not to add inductance in the circuit board wiring that
could cancel the usefulness of these low inductance
comp onents. Co nsult with the ma nufacturer of the load on
specif ic decoupling requirements. For example, Intel
recommends that the high frequency decoupling for the
Pentium Pro be co mp osed of at least fort y (40) 1µF ceramic
capacitors in the 1206 surface-mount package.
Use only specialized low-ESR capacitors intended for
switching-regulator applications for the bulk capacitors. The
bulk capacitor’s ESR will determine the output ripple voltage
and the initial voltage drop after a high slew-rate transient. An
aluminum electrolytic capacitor's ESR value is related to the
case size wi th lower ESR available in larger ca se sizes.
H owever, the Equ iva len t Series Inductance (ESL ) of these
capacitors increases with case size and can reduce the
use f ul ne ss of t he c a pa cit or t o h i gh sl ew -r ate t ran s ien t lo ad ing .
Unfortunately, ESL is not a specified parameter. Work with
your capacitor supplier and measure the capacitor’s
impedance with frequency to select a suitable component. In
most cases, multiple electrolytic capacitors of small case size
perform better than a single large case capacitor.
Out put Induct or S el ec tio n
The output inductor is sel ected to meet the out put voltage
ripple requirements and minimize the converter’s response
time to the load transient. The inductor value determi nes th e
converte r’s rippl e curre nt and the ripple vo lt age is a fun cti on
of the r ipple current. The ri pple voltage and cur rent are
approximated by the following equations:
Incr easing the value of induc tan ce reduce s the r ipp le cur rent
and volt age. However, the large i nductan ce values re duce
the converters response tim e to a lo ad transient.
FZ2 1
2π x (R1R3
+) x C3
-------------------------------------------------------=
FP1 1
2π x R2 x C1 x C2
C1 + C2
----------------------



---------------------------------------------------------=
FP2 1
2π x R3 x C3
------------------------------------=
FZ1 1
2π x R2 x C 1
------------------------------------=
100
80
60
40
20
0
-20
-40
-60
FP1
FZ2
10M1M100K10K1K10010
OPEN LOOP
ERROR AMP GAIN
FZ1 FP2
FLC FESR
COMPENSATION
GAIN (dB)
FREQUENCY (Hz)
GAIN
20LOG
(VIN/VOSC)
MODULATOR
GAIN
FIGURE 8. ASYMPTOTIC BODE PLOT OF CONVERTER GAIN
20LOG
(R2/R1)
CLOSED LOOP
GAIN
IVIN VOUT
FS x L
-------------------------------- x VOUT
VIN
----------------= VOUT I x ESR=
HIP6005B
One of the parameters limiting the converter’s response to
a load transi ent is the ti me requ ired to change the i nductor
current. Gi ven a suffi ciently fast cont rol loop design, the
HIP6 005B w ill provi de eith er 0% or 100% dut y cycle i n
response to a load transient. The response time is the time
required t o slew the i nductor cur rent f rom an ini tial current
value to the tran sient curre nt level. Duri ng thi s inte rval the
differen ce between the induct or cur rent and t he tr ansient
current le vel must be supp lied by the ou tput capacit or.
Minimizing t he respo nse t ime can m inimi ze the out put
capacitance required.
The response tim e to a transient is different for the
appli cation of load and the removal of load . The fo ll owing
equation s give the approxi m ate resp onse time interval for
appli cation and removal of a tr ansient load:
w here: ITRAN is the transient load current step, tRISE is the
respons e time to the appl ication of l oad, and t FALL is the
respons e tim e to the removal of lo ad. Wit h a +5V input
source, the worst case res ponse ti me ca n be eith er at the
applicat ion or re mova l of load and dependent upon the
DACOUT setting. Be sure to check both of these equations
at the minimum and m axi mum out put l evels fo r the worst
case response time. With a +12V input, and output voltage
level equal to DACOUT, tFALL is the longest response time.
Input Capacitor Selection
Use a mix of input bypass capacitors to control the voltage
overshoot across the MOSFETs. Use small ceramic capacitors
for high frequency decoupling and bulk capacitors to supply the
current needed each time Q1 turns on. Place the small ceramic
capacitors physically close to the MOSFETs and between the
drain of Q1 and the anode of Schottky diode D2.
The imp ortant parame ters for the bulk i nput capac itor ar e
the voltage r atin g and the RM S cur rent r atin g. For reliable
operation, select the bulk capaci tor wit h voltage and
current rat ings above t he m aximum input volta ge and
largest RM S cur rent re quir ed by the ci rcuit. The ca paci tor
voltage rating shoul d be at least 1.25 times greater than the
maximum input vo ltage and a voltage r ating of 1.5 time s is
a conserva tive gu ideline. The RMS curr ent rating
requireme nt for the input capacitor of a buck regu lator i s
appr oximatel y 1/2 t he DC load c urrent .
For a through hole design, several electr olytic capacitors
(Panasonic HFQ series or Nichicon PL seri es or Sanyo MV-GX
or equivalent) may be needed. For surface mount designs,
solid t antalum capacitors can be used, but caution must be
exercised with regard to the capacitor surge current rat ing.
These capacitors must be capable of handling the surge-
current at power-up. The TPS series available from AVX, and
the 593D series from Sprague are both surge cur rent t ested.
MOSFET Selectio n/Considerations
The HIP6005B requires an N-Channel power MOSFET. I t
should be selected based upon rDS(ON), gat e supp l y
requireme nts, and thermal management requirement s.
In high-current applications, the MOSFET power dissipation,
package selection and heatsink are the dominant design
factors. The power dissi pation includes two loss components;
conduction loss and switching loss. The conduction losses are
the largest component of power dissipat ion for the MOSFET.
Switching losses also contribut e to t he overall M OSFET power
loss (see the equations below). These equations assume linear
voltage-current transitions and are approximations. The gate-
charge losses are dissipated by the HIP6005B and do not heat
the MOSFET. However, lar ge gate-charge increases the
switching interval, tSW, which increases the upper MOSFET
switching losses. Ensure that the MOSFET is within its
maximum junction temperature at high ambient temperature by
calculating the t emperature rise accordi ng to package t hermal-
resistance specific ations. A separate heatsink may be
necessary depending upon MOSFET power, package type,
ambient temperature and air flow.
Wher e: D is the duty cycle = VOUT/VIN,
tSW is the swi tching int erval , and
FS is the switching frequen cy
Standar d-gate MOSFETs are normally recommended for
use wi th t he HIP6005B. However , lo gic-l evel gate MO SFETs
can be used und er speci al c ir cumstanc es. The i nput vol tage,
upper gate drive level, and the MOSFETs abso lute
gate-to-sour ce voltage rating determine whether logic-level
MOSFETs ar e appropriate.
Figure 9 shows the upper gate drive (BOOT pin) supplied by
a bootstrap circuit from VCC. The boot capacitor, CBOOT,
develops a f loating supply voltage referenced to the PHASE
pin. This supply is refreshed each cycle to a volt age of VCC
less the boot diode dr op (VD) when the Schottky diode, D2,
conducts. Logic- level MOSFETs can only be used if the
MOSFETs absolute gat e-to-source volt age rating exceeds
the maximum voltage applied to VCC.
Figure 10 shows the upper gate dr ive supplied by a direct
connection to VCC. This option should only be used in
converter systems where the main input volt age is +5VDC or
less. The peak upper gate-t o-source voltage i s approximately
VCC less the input supply. For +5V main power and +12VDC
for the bias, the gate-to-source voltage of Q1 is 7V. A logic-level
MOSFET is a good choice for Q1 under these conditions.
tRISE L x ITRAN
VIN VOUT
--------------------------------= tFALL L x I TRAN
VOUT
----------------------------=
PCOND = IO2 x rDS(ON) x D
PSW = 1/2 IO x VIN x tSW x FS
HIP6005B
Sch ottky Se le c tion
Rectifier D2 conducts when the upper MOSFET Q1 is o ff. The
diode should be a Schottky t ype for low power l osses. The
power dissipation in the Schottky rectifier is approxi mated by:
In addition to power dis sipation, package selection an d
heat-sink requirements are the main design tradeoffs in
choosing the schottky rectifier. Since the three factors are
interr elated, the s election process is an ite rat iv e procedure.
The maximum junction temperature of the rectifier must
remain below the manufacturer’s specified value, typically
125oC. By using the package thermal resistance specification
and the schottky power dissipation equation (shown above),
the junction temperature of the rectifier can be estimated. Be
sure to use the available airflow and ambient temperature to
determine the junction temperature rise.
+12V
HIP6005B
GND
UGATE
PHASE
BOOT
VCC
+5V OR +12
NOTE: VG-S VCC - VD.
FIGURE 9. UPPER GATE DRIVE - BOOTSTRAP OPTION
(NOTE)
CBOOT
DBOOT
Q1
D2
+
-
+ VD -
+12V
HIP6005B
GND
UGATE
PHASE
BOOT
VCC
+5V OR LESS
Q1
+
-
FIGURE 10. UPPER GATE DRIVE - DIRECT VCC DRIVE OPTION
D2
NOTE:
VG-S VCC -5V
PCOND = I0 x Vf x (1 - D)
Wher e: D is the duty cycle = VOUT / VIN, and
Vf is the Schottky forwa rd voltage drop.
HIP6005B
120
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Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
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HIP6005B DC-DC Converter Application Circuit
Figur e 11 shows an appl ication c ircui t of a DC- DC Convert er
for an Intel Pentium Pro microprocessor. Detailed
information on the circuit, including a complete Bil l-o f-
Materials and circuit board description , can be f ound in
application note AN9706. Although the Application Note
details t he HIP6005, the sam e evaluation platform can be
used to evaluate the HIP6005B..
+12V
+VO
HIP6005B
VSEN
RT
FB
COMP
VID0
VID1
VID2
VID3
OVP
SS PGOOD
D/A
GND
MONITOR
OSC
VCC
L1 - 1µH
CIN
L2
COUT
0.1µF
2x 1µF
0.1µF
0.1µF
2.2nF
8.2nF 20K
1K
7µH
5x 1000µF
9x 1000µF
0.082µF
UGATE
OCSET
PHASE
BOOT
20
D1
Q1
2N6394
1.1K
1000pF
D2
F1
2K
VIN = +5V
OR
+12V
1
2
3
4
5
6
7
9
10
11
12
13
14
15
19
20
18
AND
PROTECTION
+
-
+
-
Component Selection Notes
COUT - Each 1000µF 6.3WVDC, Sanyo MV-GX or Equivalent.
CIN - Each 330µF 25WV DC, Sanyo MV-GX or Equivalent.
L2 - Core: Micrometals T60-52; Each Winding: 14 Turns of 17AWG.
L1 - Cor e: Micrometals T50-52; Winding: 6 Turns of 18AWG.
D1 - 1N4148 or E quivalent.
D2 - 25A, 35V Schottky, Motorola MBR2535CTL or Equivalent.
Q1 - Intersil MOSFET; RFP70N03.
FIGURE 11. PENTIUM PRO DC-DC CONVERTER
VID4 8
HIP6005B