SQD40N06-14L
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S15-1873-Rev. C, 10-Aug-15 1Document Number: 67002
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Automotive N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET® power MOSFET
• Package with low thermal resistance
• 100 % Rg and UIS tested
• AEC-Q101 qualified d
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
PRODUCT SUMMARY
VDS (V) 60
RDS(on) (Ω) at VGS = 10 V 0.014
RDS(on) (Ω) at VGS = 4.5 V 0.017
ID (A) 40
Configuration Single
Package TO-252
TO-252
Top View
TO
G
D
S
Drain connected to tab
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current TC = 25 °C a
ID
40
A
TC = 125 °C 29
Continuous Source Current (Diode Conduction) aIS40
Pulsed Drain Current bIDM 160
Single Pulse Avalanche Current L = 0.1 mH IAS 32
Single Pulse Avalanche Energy EAS 51 mJ
Maximum Power Dissipation bTC = 25 °C PD
75 W
TC = 125 °C 25
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount cRthJA 60 °C/W
Junction-to-Case (Drain) RthJC 2
SQD40N06-14L
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S15-1873-Rev. C, 10-Aug-15 2Document Number: 67002
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0, ID = 250 μA 60 - - V
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5
Gate-Source Leakage IGSS V
DS = 0 V, VGS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VGS = 0 V VDS = 60 V - - 1
μA VGS = 0 V VDS = 60 V, TJ = 125 °C - - 50
VGS = 0 V VDS = 60 V, TJ = 175 °C - - 250
On-State Drain Current aID(on) V
GS = 10 V VDS ≥ 5 V 30 - - A
Drain-Source On-State Resistance aRDS(on)
VGS = 10 V ID = 20 A - 0.011 0.014
Ω
VGS = 10 V ID = 20 A, TJ = 125 °C - - 0.024
VGS = 10 V ID = 20 A, TJ = 175 °C - - 0.029
VGS = 4.5 V ID = 20 A, TJ = 25 °C - 0.014 0.017
Forward Transconductance agfs VDS = 15 V, ID = 20 A - 52 - S
Dynamic b
Input Capacitance Ciss
VGS = 0 V VDS = 25 V, f = 1 MHz
- 1685 2105
pF Output Capacitance Coss - 305 385
Reverse Transfer Capacitance Crss - 180 225
Total Gate Charge cQg
VGS = 10 V VDS = 30 V, ID = 40 A
-3451
nC Gate-Source Charge cQgs -69
Gate-Drain Charge cQgd -8.513
Gate Resistance Rgf = 1 MHz 0.8 1.7 3.7 Ω
Turn-On Delay Time ctd(on)
VDD = 30 V, RL = 0.75 Ω
ID ≅ 40 A, VGEN = 10 V, Rg = 1 Ω
-812
ns
Rise Time ctr -1320
Turn-Off Delay Time ctd(off) -2233
Fall Time ctf -914
Source-Drain Diode Ratings and Characteristics b
Pulsed Current aISM --160A
Forward Voltage VSD IF = 20 A, VGS = 0 - 0.85 1.2 V
SQD40N06-14L
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S15-1873-Rev. C, 10-Aug-15 3Document Number: 67002
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
20
40
60
80
100
03691215
V
GS
=10Vthru5V
V
GS
=4V
V
GS
=3V
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
0
16
32
48
64
80
0 8 16 24 32 40
I
D
- Drain Current (A)
- Transconductance (S)
g
fs
T
C
= 125 °C
T
C
= 25 °C
T
C
= - 55 °C
C
rss
0
500
1000
1500
2000
2500
0 102030405060
C
iss
C
oss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0
20
40
60
80
100
012345
T
C
= - 55 °C
T
C
= 125 °C
T
C
= 25 °C
V
GS
- Gate-to-Source Voltage (V)
I
D
- Drain Current (A)
0
0.01
0.02
0.03
0.04
0.05
0 1224364860
VGS =10V
VGS =4.5V
RDS(on) - On-Resistance (Ω)
ID - Drain Current (A)
0
2
4
6
8
10
0 5 10 15 20 25 30 35
I
D
=40A
V
DS
=30V
Q
g
- Total Gate Charge (nC)
V
GS
- Gate-to-Source Voltage (V)
SQD40N06-14L
www.vishay.com Vishay Siliconix
S15-1873-Rev. C, 10-Aug-15 4Document Number: 67002
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Source Drain Diode Forward Voltage
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
0.5
-50 -25 0 25 50 75 100 125 150 175
0.8
1.1
1.4
1.7
2.0
2.3
I
D
=20A
V
GS
=10V
T
J
- Junction Temperature (°C)
(Normalized)
R
DS(on)
- On-Resistance
0
0.02
0.04
0.06
0.08
0.10
0246810
TJ= 25 °C
TJ= 150 °C
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
0 0.2 0.4 0.6 0.8 1.0 1.2
1
0.01
0.001
0.1
10
100
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
I
S
- Source Current (A)
-1.5
-50 -25 0 25 50 75 100 125 150 175
-1.1
-0.7
-0.3
0.1
0.5
I
D
=5mA
I
D
= 250 μA
VGS(th) Variance (V)
TJ - Temperature (°C)
60
-50 -25 25 50 75 100 125 150 1750
63
66
69
72
75
VDS - Drain-to-Source Voltage (V)
TJ- Junction Temperature (°C)
ID=10mA
SQD40N06-14L
www.vishay.com Vishay Siliconix
S15-1873-Rev. C, 10-Aug-15 5Document Number: 67002
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
VDS - Drain-to-Source Voltage (V)
* VGS minimum VGS at which RDS(on) is specified
- Drain Current (A)ID
TC = 25 °C
Single Pulse
10 ms
1 ms
RDS(on)*
Limited by
100 ms, 1 s, 10 s, DC
0.01
0.1
1
10
100
0.01 0.1 1 10 100
BVDSS Limited
IDM Limited
100 µs
ID Limited
Square Wave Pulse Duration (s)
2
1
0.1
0.01
10-4 10-3 10-2 10-1 10
Normalized Effective Transient
Thermal Impedance
1000
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1001
SQD40N06-14L
www.vishay.com Vishay Siliconix
S15-1873-Rev. C, 10-Aug-15 6Document Number: 67002
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67002.
Square Wave Pulse Duration (s)
2
1
0.1
0.01
10
-4
10
-3
10
-2
10110
-1
Normalized Effective Transient
Thermal Impedance
0.2
0.1
Duty Cycle = 0.5
30
0.05
0.02
Single Pulse
SQD40N06-14L
www.vishay.com Vishay Siliconix
S15-1873-Rev. C, 10-Aug-15 7Document Number: 67002
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
a. As of April 2014
REVISION HISTORY a
REVISION DATE DESCRIPTION OF CHANGE
C 04-Aug-15 • Revised Rg minimum limit
Package Information
www.vishay.com Vishay Siliconix
Revision: 02-Sep-13 1Document Number: 64424
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-252AA Case Outline
Note
• Dimension L3 is for reference only.
L3
D
L4
L5
bb2
e1
E1
D1
C
A1
gage plane height (0.5 mm)
e
b3
E
C2
A
L
H
MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX.
A 2.18 2.38 0.086 0.094
A1 - 0.127 - 0.005
b 0.64 0.88 0.025 0.035
b2 0.76 1.14 0.030 0.045
b3 4.95 5.46 0.195 0.215
C 0.46 0.61 0.018 0.024
C2 0.46 0.89 0.018 0.035
D 5.97 6.22 0.235 0.245
D1 4.10 - 0.161 -
E 6.35 6.73 0.250 0.265
E1 4.32 - 0.170 -
H 9.40 10.41 0.370 0.410
e 2.28 BSC 0.090 BSC
e1 4.56 BSC 0.180 BSC
L 1.40 1.78 0.055 0.070
L3 0.89 1.27 0.035 0.050
L4 - 1.02 - 0.040
L5 1.01 1.52 0.040 0.060
ECN: T13-0592-Rev. A, 02-Sep-13
DWG: 6019
Application Note 826
Vishay Siliconix
Document Number: 72594 www.vishay.com
Revision: 21-Jan-08 3
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.420
(10.668)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.224
(5.690)
0.180
(4.572)
0.055
(1.397)
0.243
(6.180)
0.087
(2.202)
0.090
(2.286)
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Revision: 08-Feb-17 1Document Number: 91000
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