©2003 Fairchild Semiconductor Corporation Rev. B, May 2003
FJNS7565
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage 15 V
VCEO Collector-Emitter Voltage 10 V
VEBO Emitter-Base Voltage 7 V
ICCollector Current 5 A
PCCollector Dissipation 0.55 W
TJJunction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Co ndition Min. Typ. Max. Units
BVCBO Collect or-B ase Voltage IC = 10µA, IE = 0 15 V
BVCEO Collect or-E mitter Voltage IC = 1mA , IB = 0 10 V
BVEBO E mitter Base Voltage IC = 10µA, IC = 0 7 V
ICBO Collector Cut-off Current VCB = 15V, IE = 0 100 nA
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 100 nA
hFE1
hFE2
hFE3
DC Current Gain VCE = 2V, IC = 0.5A
VCE = 2V, IC = 2A
VCE = 2V, IC = 5A
450
300
150
800
VCE (sat) Collector-Emitter Saturat ion Voltage IC = 3A, IB = 60mA 0.45 V
VBE (sat) Base-Emitter Saturat ion Voltage IC = 3A, IB = 60mA 1.5 V
Cob Collector Output Capacitance VCB = 20V, IE = 0, f = 1MHz 20 pF
FJNS7565
For Output Amplifier of Electronic Flash Unit
• Low Collector-Emitter Saturation Voltage
• High Performance at Low Supply Voltage
1.Emitter 2. Collector 3. Base
TO-92Mini
1
©2003 Fairchild Semiconductor Corporation
FJNS7565
Rev. B, May 2003
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC Current Gain
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage
Figure 5. Base-Emitter On Voltage Figure 6. Collector Output Capacitance
0246810
0
2
4
6
8
10
12
14
IB=60mA
IB=40mA
IB=20mA
IC[A], COL LE CT O R CURR E NT
VCE[V], COL LE CTO R-EMITTE R VOLTAGE 0.1 1 10
10
100
1000
VCE=2V
Ta= 12 50C
Ta= 25 0C
Ta= -400C
hFE, DCC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.1 1 10
0.01
0.1
1
Ta= 1250C
Ta= 250C
Ta= -400C
IC=50IB
VCE(SAT)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT 0.1 1 10
0.1
1
Ta= 1250C
Ta= 250C
Ta= -400C
IC=50IB
VBE(SAT)[V], SATURATION VOLTAGE
IC[A], COL L EC TOR CURRENT
0.2 0.4 0.6 0.8 1.0 1.2
0
2
4
6
8
10
12
Ta= -400C
Ta= 250C
Ta= 1250C
VCE=2V
IC[A], COLLE CTO R CURRE NT
VBE[V], BASE-EMITTER VOLTAGE 1 10 100
0
20
40
60
80
IE=0,f=1MHZ
COB[pF], OUTPUT C A PACITANCE
VCB[V], COLLE CTO R -BA SE VOLTAGE
TO-92Mini
Package Dimensions
FJNS7565
Dimensions in Millimeters
Rev. B, May 2003©2003 Fairchild Semiconductor Corporation
©2003 Fairchild Semiconductor Corporation Rev. I2
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