PD - 96378 AUTOMOTIVE GRADE AUIRFZ44N HEXFET(R) Power MOSFET Features l l l l l l l l l D Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS 55V RDS(on) max. G 17.5m ID S 49A D Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. G D S TO-220AB AUIRFZ44N G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS (Thermally Limited) EAS (tested) IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Max. c h c Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Units 49 35 160 94 0.63 20 150 530 25 9.4 5.0 -55 to + 175 g c e A W W/C V mJ A mJ V/ns C 300 (1.6mm from case ) y y 10 lbf in (1.1N m) Thermal Resistance RJC RCS RJA Parameter Typ. Max. Units Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient --- 0.50 --- 1.5 --- 62 C/W HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 06/22/11 AUIRFZ44N Static Electrical Characteristics @ TJ = 25C (unless otherwise specified) Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage Parameter 55 --- --- V V(BR)DSS/TJ Conditions VGS = 0V, ID = 250A Breakdown Voltage Temp. Coefficient --- 0.058 --- V/C Reference to 25C, ID = 1mA RDS(on) VGS(th) Static Drain-to-Source On-Resistance Gate Threshold Voltage --- --- 17.5 2.0 --- 4.0 m V gfs IDSS Forward Transconductance 19 --- --- S VDS = 25V, ID = 25A Drain-to-Source Leakage Current --- --- 25 A VDS =55V, VGS = 0V --- --- 250 IGSS Gate-to-Source Forward Leakage --- --- 100 Gate-to-Source Reverse Leakage --- --- -100 VGS = 10V, ID = 25A f VDS = VGS, ID = 250A f VDS = 44V, VGS = 0V, TJ = 150C nA VGS = 20V VGS = -20V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Total Gate Charge --- --- 63 Qgs Gate-to-Source Charge --- --- 14 Qgd Gate-to-Drain ("Miller") Charge --- --- 23 VGS = 10V,See Fig 6 and 13 td(on) Turn-On Delay Time --- 12 --- VDD = 28V tr Rise Time --- 60 --- td(off) Turn-Off Delay Time --- 44 --- tf Fall Time --- 45 --- LD Internal Drain Inductance LS Internal Source Inductance Ciss Input Capacitance Coss Crss EAS Single Pulse Avalanche Energy ID = 25A nC VDS = 44V ID = 25A ns RG = 12 f VGS = 10V, See Fig.10 Between lead, D --- 4.5 --- --- 7.5 --- --- 1470 --- Output Capacitance --- 360 --- pF VDS = 25V Reverse Transfer Capacitance --- --- 88 530 --- 150 mJ IAS = 25A, L= 0.47mH Min. Typ. Max. Units d g h nH 6mm (0.25in.) from package G S and center of die contact VGS = 0V = 1.0MHz, See Fig.5 Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD (Body Diode) Diode Forward Voltage trr Reverse Recovery Time --- Qrr Reverse Recovery Charge --- ton Forward Turn-On Time c --- --- Conditions MOSFET symbol 49 A showing the integral reverse D G --- --- 160 --- --- 1.3 V p-n junction diode. TJ = 25C, IS = 25A, VGS = 0V 63 95 170 260 ns nC TJ = 25C, IF = 25A di/dt = 100A/s f S f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by ISD 25A, di/dt 230A/s, VDD V(BR)DSS, Starting TJ = 25C, L = 0.48mH Pulse width 400s; duty cycle 2%. max. junction temperature. (See fig. 11) RG = 25, IAS = 25A. (See Figure 12) 2 TJ 175C This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to TJ = 175C . www.irf.com AUIRFZ44N Qualification Information Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. 3L-TO-220 N/A Machine Model Class M3(+/- 400V ) (per AEC-Q101-002) Human Body Model ESD Class H1C(+/- 1250V ) (per AEC-Q101-001) Charged Device Model RoHS Compliant Class C5(+/- 1250V ) (per AEC-Q101-005) Yes Qualification standards can be found at International Rectifier's web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report. Highest passing voltage www.irf.com 3 AUIRFZ44N 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 100 100 10 4.5V 20s PULSE WIDTH TJ = 25 C 1 0.1 1 10 4.5V 10 TJ = 25 C TJ = 175 C 10 V DS = 25V 20s PULSE WIDTH 6 7 8 9 10 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.5 5 10 100 Fig 2. Typical Output Characteristics 1000 4 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 20s PULSE WIDTH TJ = 175 C 1 0.1 100 VDS , Drain-to-Source Voltage (V) 1 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP TOP 11 ID = 49A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com AUIRFZ44N 2500 VGS , Gate-to-Source Voltage (V) 2000 C, Capacitance (pF) 20 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss 1500 1000 Coss 500 Crss 0 1 10 VDS = 44V VDS = 27V VDS = 11V 16 12 8 4 0 100 ID = 25A VDS , Drain-to-Source Voltage (V) 0 10 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 40 50 60 70 OPERATION IN THIS AREA LIMITED BY R DS (on) 100 100 TJ = 175 C 10 TJ = 25 C 1 V GS = 0 V 0.6 1.2 1.8 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 30 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 0.1 0.0 20 QG , Total Gate Charge (nC) 2.4 100sec 10 1msec 1 0.1 Tc = 25C Tj = 175C Single Pulse 1 10msec 10 100 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 5 AUIRFZ44N 50 RD V DS V GS ID , Drain Current (A) 40 D.U.T. RG + -V DD 30 V GS Pulse Width 1 s Duty Factor 0.1 % 20 10 Fig 10a. Switching Time Test Circuit 0 25 50 75 100 125 150 TC , Case Temperature ( C) 175 VDS 90% Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 0.01 0.00001 PDM 0.05 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com AUIRFZ44N 15V L VDS DRIVER D.U.T RG + - VDD IAS 20V A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit EAS , Single Pulse Avalanche Energy (mJ) 300 TOP 240 BOTTOM ID 10A 18A 25A 180 120 60 0 25 V(BR)DSS 50 75 100 125 150 Starting TJ , Junction Temperature ( C) 175 Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp Current Regulator Same Type as D.U.T. I AS 50K Fig 12b. Unclamped Inductive Waveforms .2F 12V .3F D.U.T. + V - DS VGS 3mA QG VGS IG ID Current Sampling Resistors QGS QGD Fig 13b. Gate Charge Test Circuit VG Charge Fig 13a. Basic Gate Charge Waveform www.irf.com 7 AUIRFZ44N Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG + * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test - V DD VGS * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period V[GS=10V] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple 5% [ISD] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET(R) power MOSFETs 8 www.irf.com AUIRFZ44N TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information Part Number AUFZ44N YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 AUIRFZ44N Ordering Information Base part AUIRFZ44N 10 Package Type TO-220 Standard Pack Form Quantity Complete Part Number Tube 50 AUIRFZ44N www.irf.com AUIRFZ44N IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. 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