AUIRFZ44N
HEXFET® Power MOSFET
06/22/11
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S
D
G
AUTOMOTIVE GRADE
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Advanced Planar Technology
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Low On-Resistance
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Dynamic dV/dT Rating
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175°C Operating Temperature
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Fast Switching
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Fully Avalanche Rated
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Repetitive Avalanche Allowed up to Tjmax
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Lead-Free, RoHS Compliant
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Automotive Qualified *
Features
Description
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
GDS
Gate Drain Source
TO-220AB
AUIRFZ44N
D
S
D
G
V
(BR)DSS
55V
R
DS(on)
max. 17.5mΩ
I
D
49A
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve low
on-resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety
of other applications.
Parameter
Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V A
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS (Thermally Limited)
Single Pulse Avalanche Energy
h
E
AS
(tested)
Single Pulse Avalanche Energy Tested Value
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
c
mJ
dv/dt Peak Diode Recovery dv/dt
e
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case ––– 1.5
R
θ
CS
Case-to-Sink, Flat, Greased Surface 0.50 –––
R
θ
JA
Junction-to-Ambient ––– 62
mJ
530
°C/W
94
Max.
49
35
160
0.63
±20
5.0
9.4
10 lbf
y
in (1.1N
y
m)
300 (1.6mm from case )
150
25
-55 to + 175
PD - 96378
AUIRFZ44N
2www.irf.com
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D
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Starting TJ = 25°C, L = 0.48mH
RG = 25Ω, IAS = 25A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Notes:
ISD ≤ 25A, di/dt ≤ 230A/μs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 400μs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175°C .
S
D
G
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V
(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V
Δ
V
(BR)DSS
/
Δ
T
J Breakdown Voltage Temp. Coefficient ––– 0.058 ––– V/°C
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 17.5 mΩ
V
GS(th) Gate Threshold Voltage 2.0 ––– 4.0 V
gfs Forward Transconductance 19 ––– ––– S
I
DSS Drain-to-Source Leakage Current ––– ––– 25 μA
––– ––– 250
I
GSS Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
Dynamic Electrical Characteristics @ T
J
= 25°C (unless oth erwi se specified)
Q
gTotal Gate Charge ––– ––– 63
Q
gs Gate-to-Source Charge ––– ––– 14 nC
Q
gd Gate-to-Drain ("Miller") Charge ––– ––– 23
t
d(on) Turn-On Delay Time ––– 12 –––
t
rRise Time ––– 60 –––
t
d(off) Turn-Off Delay Time ––– 44 ––– ns
t
fFall Time ––– 45 –––
L
DInternal Drain Inductance Between lead,
nH 6mm (0.25in.)
L
SInternal Source Inductance from package
and center of die contact
C
iss Input Capacitance ––– 1470 –––
C
oss Output Capacitance ––– 360 –––
C
rss Reverse Transfer Capacitance ––– 88 –––
EAS Single Pulse Avalanche Energy
d
–––
530
150
mJ
Diode Characteri stic s
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
c
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 63 95 ns
Q
rr
Reverse Recovery Charge ––– 170 260
n
C
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ƒ = 1.0MHz, See Fig.5
pF
VDS = 25V, ID = 25A
f
ID = 25A
VDS = 44V
Conditions
VGS = 10V, See Fig.10
f
VGS = 0V
VDS = 25V
IAS = 25A, L= 0.47mH
VGS = 20V
VGS = -20V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 25A, V
GS
= 0V
f
T
J
= 25°C, I
F
= 25A
di/dt = 100A/μs
f
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 25A
f
VDS = VGS, ID = 250μA
VDS =55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 10V,See Fig 6 and 13
VDD = 28V
ID = 25A
RG = 12Ω
––– –––
––––––
4.5
7.5
–––
–––
–––
–––
49
160
A
AUIRFZ44N
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† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Exceptions to AEC-Q101 requirements are noted in the qualification report.
††† Highest passing voltage
Qualification Information
†
Moisture Sensitivity Level
3L-TO-220
N/A
Human Body Model Class H1C(+/- 1250V )
†††
(per AEC-Q101-001)
Qualification Level
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive level.
Charged Device Model Class C5(+/- 1250V )
†††
(per AEC-Q101-005)
RoHS Compliant Yes
ESD
Machine Model Class M3(+/- 400V )
†††
(per AEC-Q101-002)
AUIRFZ44N
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
0.1 1 10 100
20μs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
0.1 1 10 100
20μs PULSE WIDTH
T = 175 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
4 5 6 7 8 9 10 11
V = 25V
20μs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 175 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
49A
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
0
500
1000
1500
2000
2500
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
010 20 30 40 50 60 70
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D25A
V = 11V
DS
V = 27V
DS
V = 44V
DS
0.1
1
10
100
1000
0.0 0.6 1.2 1.8 2.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 175 C
J°
1 10 100
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
25 50 75 100 125 150 175
0
10
20
30
40
50
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
VGS
+
-
VDD
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
AUIRFZ44N
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D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3μF
50KΩ
.2μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
tp
V
(BR)DSS
I
AS
QG
QGS QGD
VG
Charge
VGS
25 50 75 100 125 150 175
0
60
120
180
240
300
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
10A
18A
25A
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Fig 14. For N-channel HEXFET® power MOSFETs
Peak Diode Recovery dv/dt Test Circuit
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
+
-
+
+
+
-
-
-
RG
VDD
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T*Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
* Reverse Polarity of D.U.T for P-Channel
VGS
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[ ] ***
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TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
YWWA
XX or XX
Part Number
IR Logo
Lot Code
AUFZ44N
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
AUIRFZ44N
10 www.irf.com
Ordering Information
Base part
Package Typ e
Standard Pack
Complete Part Number
Form
Quantity
AUIRFZ44N TO-220 Tube 50 AUIRFZ44N
AUIRFZ44N
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with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary
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