2SK3453
2011-05-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
2SK3453
Switching Regulator Applications
Low drain-source ON-resistance: RDS (ON) = 0.72 (typ.)
High forward transfer admittance: |Yfs| = 7.0 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 700 V)
Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS 700 V
Drain-gate voltage (RGS = 20 kΩ) VDGR 700 V
Gate-source voltage VGSS ±30 V
DC (Note 1) ID 10
Drain current
Pulse (Note 1) IDP 30
A
Drain power dissipation (Tc = 25°C) PD 80 W
Single pulse avalanche energy
(Note 2)
EAS 420 mJ
Avalanche current IAR 10 A
Repetitive avalanche energy (Note 3) EAR 8 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg 55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case Rth (ch-c) 1.56 °C/W
Thermal resistance, channel to ambient Rth (ch-a) 41.6 °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 7.5 mH, RG = 25 Ω, IAR = 10 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA 2-16F1B
Weight: 5.8 g (typ.)
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2011-05-06
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±25 V, VDS = 0 V ±10 μA
Gate-source breakdown voltage V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 V
Drain cut-OFF current IDSS V
DS = 700 V, VGS = 0 V 100 μA
Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 700 V
Gate threshold voltage Vth V
DS = 10 V, ID = 1 mA 2.0 4.0 V
Drain-source ON resistance RDS (ON) V
GS = 10 V, ID = 5 A 0.72 1.0 Ω
Forward transfer admittance Yfs V
DS = 10 V, ID = 5 A 4.0 7.0 S
Input capacitance Ciss 1700
Reverse transfer capacitance Crss 40
Output capacitance Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
200
pF
Rise time tr 40
Turn-ON time ton 72
Fall time tf 42
Switching time
Turn-OFF time toff
145
ns
Total gate charge
(gate-source plus gate-drain) Qg 53
Gate-source charge Qgs 25
Gate-drain (“miller”) charge Qgd
VDD 400 V, VGS = 10 V, ID = 10 A
28
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current (Note 1) IDR 10 A
Pulse drain reverse current (Note 1) IDRP 30 A
Forward voltage (diode) VDSF I
DR = 10 A, VGS = 0 V 1.9
V
Reverse recovery time trr 1400 ns
Reverse recovery charge Qrr
IDR = 10 A, VGS = 0 V,
dIDR/dt = 100 A/μs 17.5 μC
Marking
Duty 1%, tw = 10 μs
0 V
10 V
VGS
RL = 40 Ω
VDD 200 V
ID = 5 A VOUT
4.7 Ω
K3453
TOSHIBA
Lot No.
Note 4
Part No. (or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2SK3453
2011-05-06
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ID VDS
ID VDS
ID VGS
VDS VGS
Yfs ID
RDS (ON) ID
Drain-source voltage VDS (V)
Drain-source voltage VDS (V)
Gate-source voltage VGS (V)
Gate-source voltage VGS (V)
Drain current ID (A)
Drain current ID (A)
Drain current ID (A)
Drain current ID (A)
Drain-source voltage VDS (V)
Drain current ID (A)
Drain-source ON-resistance
RDS (ON) (Ω)
Forward transfer admittance Yfs (S)
0 2 4 8 6 10
0
4
8
12
16
20
100
Tc = 55°C
25
Common source
VDS = 20 V
Pulse test 16
0
4
8
12
20
2.5
5
048 16 12 20
Common source
Tc = 25°C
Pulse test
ID = 10 A
50
0.1
3
0.1 3100
100
Tc = 55°C
0.3
25
Common source
VDS = 20 V
Pulse test
0.5 1 5
10 30 50
0.3
0.5
1
5
10
30
0.1
1
0.1 50
1
VGS = 10, 15 V
0.3 0.5 3 5 10 30
0.3
0.5
3
5
Common source
Tc = 25°C
Pulse test
10
30
50
8
0
0
2
4
6
10
2 4 8 6 10
Common source
Tc = 25°C
Pulse test
VGS = 4 V
4.6
4.8
5
5.2
6
8
10
16
0
0
4
8
12
20
10 20 40 30 50
VGS = 4 V
5.2
5.6
6
10
8
4.6
Common source
Tc = 25°C
Pulse test
2SK3453
2011-05-06
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40
80
10
0 40 80 120 200
120
160
160
200
RDS (ON) Tc
IDR VDS
Capacitance – VDS
Vth Tc
PD Tc
Dynamic input/output characteristics
Case temperature Tc (°C)
Drain-source voltage VDS (V)
Drain-source voltage VDS (V)
Case temperature Tc (°C)
Case temperature Tc (°C)
Total gate charge Qg (nC)
Drain reverse current IDR (A)
Drain-source ON-resistance RDS (ON) (Ω)
Gate threshold voltage Vth (V)
Capacitance C (pF)
Drain-source voltage VDS (V)
Drain power dissipation PD (W)
Gate-source voltage VGS (V)
0
1
2
3
4
5
80 40 0 40 120 160
Common source
VGS = 10 V
Pulse test
5
2.5
ID = 10 A
80
0
1
2
3
4
5
0
1
2
3
4
5
80 40 0 40 80 160
Common source
VDS = 10 V
ID = 1 mA
Pulse test
120
80
100
200
0
0 10 30 50
300
400
60
500
4
8
0
12
16
20
VDD = 100 V
VGS
400
200
VDS
20 40 70
Common source
ID = 10 A
Tc = 25°C
Pulse test
50
500
3000
10
0.1 0.3 3 10 100
100
300
1000
5000
1 30
30
Ciss
50 5 0.5
Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
Crss
Coss
3
1
1
0.01
00.2 1.2
100
0.6 0.8
10
0.1
10
0.4 1.0
0.03
0.05
0.3
0.5
3
5
30
50 Common source
Tc = 25°C
Pulse test
VGS = 0, 1 V
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2011-05-06
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Pulse width tw (s)
rth tw
EAS – Tch
Channel temperature (initial) TchC)
Normalized transient thermal impedance rth (t)/Rth (ch-c)
Avalanche energy EAS (mJ)
15 V
15 V
Test circuit Waveform
IAR
BVDSS
VDD V
DS
RG = 25 Ω
VDD = 90 V, L = 7.5 mH
= VDD
BVDSS
BVDSS
2
IL
2
1
ΕAS
Safe operating area
Drain-source voltage VDS (V)
Drain current ID (A)
0.001
1
0.1
10 μ 100 μ
10
1 m 10 m 100 m 1 10
Single pulse
0.2
0.1
0.05
0.02
0.01
T
PDM
t
Duty = t/T
Rth (ch-c) = 1.56°C/W
Duty = 0.5
0.01
0
25
100
200
300
500
400
50 75 100 125 150
DC operation
Tc = 25°C
1 10 100
1000
100 μs *
1 ms *
ID max (pulsed) *
* Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
0.01
0.03
0.1
0.3
1
3
30
100
10 ID max (continuous)
2SK3453
2011-05-06
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all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
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