(R) FQP32N20C/FQPF32N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls. * * * * * * 28A, 200V, RDS(on) = 0.082 @VGS = 10 V Low gate charge ( typical 82.5 nC) Low Crss ( typical 185 pF) Fast switching 100% avalanche tested Improved dv/dt capability D { G{ G DS TO-220 Absolute Maximum Ratings Symbol VDSS ID TO-220F GD S FQP Series FQPF Series S FQP32N20C - Continuous (TC = 100C) Drain Current { TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current IDM - Pulsed (Note 1) FQPF32N20C 200 Units V 28.0 28.0 * 17.8 17.8 * A A 112 112 * A VGSS Gate-Source Voltage 30 V EAS Single Pulsed Avalanche Energy (Note 2) 955 mJ IAR Avalanche Current (Note 1) 28.0 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) (Note 1) 15.6 5.5 -55 to +150 mJ V/ns W W/C C 300 C dv/dt PD TJ, TSTG TL (Note 3) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 156 1.25 50 0.4 * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol RJC Parameter Thermal Resistance, Junction-to-Case RJS Thermal Resistance, Case-to-Sink Typ. 0.5 -- C/W RJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 C/W (c)2004 Fairchild Semiconductor Corporation FQP32N20C 0.8 FQPF32N20C 2.51 Units C/W Rev. A, March 2004 FQP32N20C/FQPF32N20C QFET Symbol TC = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units 200 -- -- V -- V/C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C -- 0.24 IDSS IGSSF IGSSR VDS = 200 V, VGS = 0 V -- -- 10 A VDS = 160 V, TC = 125C -- -- 100 A Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 0.068 0.082 -- 20 -- S Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 14 A gFS Forward Transconductance VDS = 40 V, ID = 14 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1700 2220 pF -- 400 520 pF -- 185 245 pF Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 100 V, ID = 32 A, RG = 25 (Note 4, 5) VDS = 160 V, ID = 32 A, VGS = 10 V (Note 4, 5) -- 25 60 ns -- 270 550 ns -- 245 500 ns -- 210 430 ns -- 82.5 110 nC -- 10.5 -- nC -- 44.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 28 A ISM -- -- 112 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 28 A Drain-Source Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 32 A, dIF / dt = 100 A/s (Note 4) -- 265 -- ns -- 2.73 -- C Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.4mH, IAS = 32A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 28A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2004 Fairchild Semiconductor Corporation Rev. A, March 2004 FQP32N20C/FQPF32N20C Electrical Characteristics FQP32N20C/FQPF32N20C Typical Characteristics 10 Top : ID, Drain Current [A] ID, Drain Current [A] 2 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 2 10 1 10 o 1 150 C 10 o 25 C o -55 C 0 10 Notes : 1. 250 s Pulse Test 2. TC = 25 0 Notes : 1. VDS = 40V 2. 250 s Pulse Test -1 10 -1 10 0 10 1 10 10 2 4 Figure 1. On-Region Characteristics 8 2 IDR, Reverse Drain Current [A] 10 0.2 VGS = 10V 0.1 VGS = 20V 1 10 150 25 0 10 Notes : 1. VGS = 0V 2. 250 s Pulse Test Note : TJ = 25 0.0 10 Figure 2. Transfer Characteristics 0.3 RDS(ON) [ ], Drain-Source On-Resistance 6 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] -1 0 20 40 60 80 100 10 0.0 0.4 0.8 1.2 1.6 2.0 VSD, Source-Drain voltage [V] ID, Drain Current [A] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Capacitance [pF] 5000 4000 Ciss 3000 Coss Crss 2000 Notes : 1. VGS = 0 V 2. f = 1 MHz 1000 VGS, Gate-Source Voltage [V] 12 6000 VDS = 40V 10 VDS = 100V VDS = 160V 8 6 4 2 Note : ID = 32.0A 0 0 -1 10 0 10 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics (c)2004 Fairchild Semiconductor Corporation 0 20 40 60 80 100 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics Rev. A, March 2004 (Continued) 3.0 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 150 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 14 A 0.5 0.0 -100 200 -50 o TJ, Junction Temperature [ C] 50 100 150 200 o Figure 8. On-Resistance Variation vs Temperature Operation in This Area is Limited by R DS(on) Operation in This Area is Limited by R DS(on) 2 2 10 10 ID, Drain Current [A] 100 s 1 ms 10 ms 1 10 DC 0 10 Notes : 10 s 100 s 1 1 ms 10 10 ms DC 0 Notes : 10 o 1. TC = 25 C o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse o 2. TJ = 150 C 3. Single Pulse -1 -1 10 0 TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature ID, Drain Current [A] FQP32N20C/FQPF32N20C Typical Characteristics 0 1 10 10 2 10 0 10 10 1 10 2 10 VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 9-1. Maximum Safe Operating Area for FQP32N20C Figure 9-2. Maximum Safe Operating Area for FQPF32N20C 30 ID, Drain Current [A] 25 20 15 10 5 0 25 50 75 100 125 150 TC, Case Temperature [] Figure 10. Maximum Drain Current vs Case Temperature (c)2004 Fairchild Semiconductor Corporation Rev. A, March 2004 (Continued) 0 10 ZJC(t), Thermal Response FQP32N20C/FQPF32N20C Typical Characteristics D = 0 .5 N o te s : 1 . Z J C ( t) = 0 . 8 0 /W M a x . 2 . D u t y F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t) 0 .2 10 -1 0 .1 0 .0 5 PDM 0 .0 2 0 .0 1 10 t1 s in g le p u ls e -2 10 -5 10 -4 10 -3 10 -2 10 t2 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] ZJC(t), Thermal Response Figure 11-1. Transient Thermal Response Curve for FQP32N20C 10 D = 0 .5 0 N o te s : 1 . Z J C ( t) = 2 .5 1 /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t) 0 .2 0 .1 0 .0 5 10 -1 0 .0 2 0 .0 1 PDM s in g le p u ls e 10 t1 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11-2. Transient Thermal Response Curve for FQPF32N20C (c)2004 Fairchild Semiconductor Corporation Rev. A, March 2004 FQP32N20C/FQPF32N20C Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50K 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V tp (c)2004 Fairchild Semiconductor Corporation ID (t) VDS (t) VDD tp Time Rev. A, March 2004 FQP32N20C/FQPF32N20C Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop (c)2004 Fairchild Semiconductor Corporation Rev. A, March 2004 FQP32N20C/FQPF32N20C Package Dimensions TO - 220 Dimensions in Millimeters (c)2004 Fairchild Semiconductor Corporation Rev. A, March 2004 (Continued) 3.30 0.10 TO-220F 10.16 0.20 2.54 0.20 o3.18 0.10 (7.00) (1.00x45) 15.87 0.20 15.80 0.20 6.68 0.20 (0.70) 0.80 0.10 ) 0 (3 9.75 0.30 MAX1.47 #1 +0.10 0.50 -0.05 2.54TYP [2.54 0.20] 2.76 0.20 2.54TYP [2.54 0.20] 9.40 0.20 4.70 0.20 0.35 0.10 Dimensions in Millimeters (c)2004 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2004 Fairchild Semiconductor Corporation Rev. I8