© 2011 IXYS All rights reserved 1 - 8
20110916d
MIXA80WB1200TEH
IXYS reserves the right to change limits, test conditions and dimensions.
Converter - Brake - Inverter
Module
XPT IGBT
Three Phase
Rectifier
Brake
Chopper
Three Phase
Inverter
VRRM = 1600 V VCES = 1200 V VCES = 1200 V
IDAVM = 265 A IC25 = 60 A IC25 = 120 A
IFSM = 1100 A VCE(sat) = 1.8 V VCE(sat) = 1.8 V
Pin configuration see outlines.
Features:
• Easy paralleling due to the positive
temperature coefficient of the on-state
voltage
• Rugged XPT design
(Xtreme light Punch Through) results in:
- short circuit rated for 10 µsec.
- very low gate charge
- square RBSOA @ 3x IC
- low EMI
• Thin wafer technology combined with
the XPT design results in a competitive
low VCE(sat)
• SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Application:
• AC motor drives
• Solar inverter
• Medical equipment
• Uninterruptible power supply
• Air-conditioning systems
• Welding equipment
• Switched-mode and
resonant-mode power supplies
Package:
• "E3-Pack" standard outline
• Insulated copper base plate
• Soldering pins for PCB mounting
• Temperature sense included
Part name (Marking on product)
MIXA80WB1200TEH
21 22
1
D12
2
D13 D7
T7
D1 D3 D5
D2 D4 D6
T1 T3 T5
T2 T4 T6
D15D11
D14 D16
3
23 24
14
7
16
15
11
10
18
17
12
6
20
19
13
54
NTC
8
9
E72873
© 2011 IXYS All rights reserved 2 - 8
20110916d
MIXA80WB1200TEH
IXYS reserves the right to change limits, test conditions and dimensions.
Ouput Inverter T1 - T6
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VCES collector emitter voltage TVJ = 25°C 1200 V
VGES
VGEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient
±20
±30
V
V
IC25
IC80
collector current TC = 25°C
TC = 80°C
120
84
A
A
Ptot total power dissipation TC = 25°C 390 W
VCE(sat) collector emitter saturation voltage IC = 77 A; VGE = 15 V TVJ = 25°C
TVJ = 125°C
1.8
2.1
2.1 V
V
VGE(th) gate emitter threshold voltage IC = 3 mA; VGE = VCE TVJ = 25°C 5.4 6.0 6.5 V
ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C
TVJ = 125°C
0.03
0.6
0.2 mA
mA
IGES gate emitter leakage current VGE = ±20 V 500 nA
QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 75 A 230 nC
td(on)
tr
td(off)
tf
Eon
Eoff
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load TVJ = 125°C
VCE = 600 V; IC = 75 A
VGE = ±15 V; RG = 10 W
70
40
250
100
6.8
8.3
ns
ns
ns
ns
mJ
mJ
RBSOA reverse bias safe operating area
V
GE
= ±15 V; R
G
= 10 W;
TVJ = 125°C
VCEK = 1200 V 225 A
SCSOA
tSC
ISC
short circuit safe operating area
short circuit duration
short circuit current
VCE = 900 V; VGE = ±15 V; TVJ = 125°C
RG = 10 W; non-repetitive 300
10 µs
A
RthJC thermal resistance junction to case (per IGBT) 0.32 K/W
Output Inverter D1 - D6
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VRRM max. repetitve reverse voltage TVJ = 25°C 1200 V
IF25
IF80
forward current TC = 25°C
TC = 80°C
135
90
A
A
VFforward voltage IF = 100 A; VGE = 0 V TVJ = 25°C
TVJ = 125°C
1.95
1.95
2.2 V
V
Qrr
IRM
trr
Erec
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
VR = 600 V
diF /dt = -1600 A/µs TVJ = 125°C
IF = 100 A; VGE = 0 V
12.5
100
350
4
µC
A
ns
mJ
RthJC thermal resistance junction to case (per diode) 0.4 K/W
TC = 25°C unless otherwise stated
© 2011 IXYS All rights reserved 3 - 8
20110916d
MIXA80WB1200TEH
IXYS reserves the right to change limits, test conditions and dimensions.
Brake T7
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VCES collector emitter voltage TVJ = 25°C 1200 V
VGES
VGEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient
±20
±30
V
V
IC25
IC80
collector current TC = 25°C
TC = 80°C
60
40
A
A
Ptot total power dissipation TC = 25°C 195 W
VCE(sat) collector emitter saturation voltage IC = 35 A; VGE = 15 V TVJ = 25°C
TVJ = 125°C
1.8
2.1
2.1 V
V
VGE(th) gate emitter threshold voltage IC = 1.5 mA; VGE = VCE TVJ = 25°C 5.4 6.0 6.5 V
ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C
TVJ = 125°C
0.01
0.1
0.1 mA
mA
IGES gate emitter leakage current VGE = ±20 V 500 nA
QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 35 A 107 nC
td(on)
tr
td(off)
tf
Eon
Eoff
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load TVJ = 125°C
VCE = 600 V; IC = 35 A
VGE = ±15 V; RG = 27 W
70
40
250
100
3.8
4.1
ns
ns
ns
ns
mJ
mJ
RBSOA reverse bias safe operating area
V
GE
= ±15 V; R
G
= 27 W;
TVJ = 125°C
VCEK = 1200 V 105 A
SCSOA
tSC
ISC
short circuit safe operating area
short circuit duration
short circuit current
VCE = 900 V; VGE = ±15 V; TVJ = 125°C
RG = 27 W; non-repetitive 140
10 µs
A
RthJC thermal resistance junction to case 0.64 K/W
Brake Chopper D7
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VRRM max. repetitive reverse voltage TVJ = 25°C 1200 V
IF25
IF80
forward current TC = 25°C
TC = 80°C
44
29
A
A
VFforward voltage IF = 30 A; VGE = 0 V TVJ = 25°C
TVJ = 125°C
1.95
1.95
2.2 V
V
IRreverse current VR = VRRM TVJ = 25°C
TVJ = 125°C
0.01
0.15
0.1 mA
mA
Qrr
IRM
trr
Erec
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
VR = 600 V
diF /dt = 600 A/µs TVJ = 125°C
IF = 30 A; VGE = 0 V
3.5
30
350
0.9
µC
A
ns
mJ
RthJC thermal resistance junction to case 1.2 K/W
TC = 25°C unless otherwise stated
© 2011 IXYS All rights reserved 4 - 8
20110916d
MIXA80WB1200TEH
IXYS reserves the right to change limits, test conditions and dimensions.
Input Rectifier Bridge D11 - D16
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VRRM max. repetitive reverse voltage TVJ = 25°C 1600 V
IFAV
IDAVM
average forward current
max. average DC output current
sine 180° TC = 80°C
rect.; d = 1/3 TC = 80°C
94
265
A
A
IFSM max. forward surge current t = 10 ms; sine 50 Hz TVJ = 25°C
TVJ = 125°C
1100
970
A
A
I2tI2t value for fusing t = 10 ms; sine 50 Hz TVJ = 25°C
TVJ = 125°C
6000
4700
A2s
A2s
Ptot total power dissipation TC = 25°C 250 W
VFforward voltage IF = 150 A TVJ = 25°C
TVJ = 125°C
1.3
1.3
1.6 V
V
IRreverse current VR = VRRM TVJ = 25°C
TVJ = 125°C
0.05
2.0
0.1 mA
mA
RthJC thermal resistance junction to case (per diode) 0.5 K/W
Temperature Sensor NTC
Ratings
Symbol Definitions Conditions min. typ. max. Unit
R25
B25/50
resistance TC = 25°C 4.75 5.0
3375
5.25 kW
K
Module
Ratings
Symbol Definitions Conditions min. typ. max. Unit
TVJ
TVJM
Tstg
operating temperature
max. virtual junction temperature
storage temperature
-40
-40
125
150
125
°C
°C
°C
VISOL isolation voltage IISOL < 1 mA; 50/60 Hz 3000 V~
CTI comparative tracking index 200
Mdmounting torque (M5) 3 6 Nm
dS
dA
creep distance on surface
strike distance through air
6
6
mm
mm
Rpin-chip resistance pin to chip 5 mW
RthCH thermal resistance case to heatsink with heatsink compound 0.01 K/W
Weight 300 g
Equivalent Circuits for Simulation
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V0
R0
rectifier diode D8 - D13 TVJ = 150°C 0.87
2.7
V
mW
V0
R0
IGBT T1 - T6 TVJ = 150°C 1.1
17.9
V
mW
V0
R0
free wheeling diode D1 - D6 TVJ = 150°C 1.09
9.1
V
mW
V0
R0
IGBT T7 TVJ = 150°C 1.1
40
V
mW
V0
R0
free wheeling diode D7 TVJ = 150°C 1.2
27.0
V
mW
I
V
0
R
0
TC = 25°C unless otherwise stated
© 2011 IXYS All rights reserved 5 - 8
20110916d
MIXA80WB1200TEH
IXYS reserves the right to change limits, test conditions and dimensions.
XXX XX-XXXXX YYCWx
Part name
Date Code
Logo Prod.Index
2D Data Matrix
FOSS-ID 6 digits
Part number
M = Module
I = IGBT
XA = XPT standard
80 = Current Rating [A]
WB = 6-Pack + 3~ Rectifier Bridge & Brake Unit
1200 = Reverse Voltage [V]
T = NTC
EH = E3-Pack
Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code
Standard MIXA80WB1200 TEH MIXA80WB1200TEH Box 5 509112
Circuit Diagram
Outline Drawing Dimensions in mm (1 mm = 0.0394“)
Product Marking
21 22
1
D12
2
D13 D7
T7
D1 D3 D5
D2 D4 D6
T1 T3 T5
T2 T4 T6
D15D11
D14 D16
3
23 24
14
7
16
15
11
10
18
17
12
6
20
19
13
54
NTC
8
9
© 2011 IXYS All rights reserved 6 - 8
20110916d
MIXA80WB1200TEH
IXYS reserves the right to change limits, test conditions and dimensions.
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
0
20
40
60
80
100
120
140
0 20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
14
16
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0
20
40
60
80
100
120
140
V
CE
[V]
I
C
[A]
Q
G
[nC]
V
GE
[V]
9 V
11 V
5 6 7 8 9 10 11 12 13
0
20
40
60
80
100
120
140
0 50 100 150 200 250 300
0
5
10
15
20
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
13 V
8 10 12 14 16 18 20 22 24
5
6
7
8
9
10
E
[mJ]
E
off
Fig. 1 Typ. output characteristics
V
CE
[V]
I
C
[A]
V
GE
= 15 V
17 V
19 V
Fig. 2 Typ. output characteristics
I
C
[A]
Fig. 3 Typ. tranfer characteristics
V
GE
[V]
Fig. 4 Typ. turn-on gate charge
Fig. 5 Typ. switching energy vs. collector current
E
on
Fig. 6 Typ. switching energy vs. gate resistance
R
G
[Ω]
E
[mJ]
I
C
[A]
E
on
E
off
I
C
= 75 A
V
CE
= 600 V
RG = 10 Ω
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
IC = 75 A
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
V
GE
= 15 V
T
VJ
= 125°C
Inverter T1 - T6
© 2011 IXYS All rights reserved 7 - 8
20110916d
MIXA80WB1200TEH
IXYS reserves the right to change limits, test conditions and dimensions.
1000 1200 1400 1600 1800 2000 2200
4
8
12
16
20
24
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
50
100
150
200
Qrr
[µC]
IF
[A]
VF [V] diF /dt [A/µs]
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
VR = 600 V
50 A
100 A
200 A
Fig. 7 Typ. Forward current versus VFFig. 8 Typ. reverse recov.charge Qrr vs. di/dt
1000 1200 1400 1600 1800 2000 2200
40
60
80
100
120
140
160
IRM
[A]
diF /dt [A/µs]
TVJ = 125°C
VR = 600 V
200 A
50 A
100 A
Fig. 9 Typ. peak reverse current IRM vs. di/dt
1000 1200 1400 1600 1800 2000 2200
0
100
200
300
400
500
600
700
trr
[ns]
diF /dt [A/µs]
200 A
50 A
100 A
TVJ = 125°C
VR = 600 V
Fig. 10 Typ. recovery time trr versus di/dt
Fig. 11 Typ. recovery energy Erec versus di/dt
1000 1200 1400 1600 1800 2000 2200
0
2
4
6
8
Erec
[mJ]
diF /dt [A/µs]
TVJ = 125°C
VR = 600 V
200 A
50 A
100 A
0.001 0.01 0.1 1 10
0.01
0.1
1
tp [s]
ZthJC
[K/W]
Fig. 12 Typ. transient thermal impedance
IGBT
Diode
Inverter IGBT Inverter FRD
RitiRiti
1 0.072 0.002 0.092 0.002
2 0.037 0.03 0.067 0.03
3 0.156 0.03 0.155 0.03
4 0.055 0.08 0.086 0.08
Inverter D1 - D6
© 2011 IXYS All rights reserved 8 - 8
20110916d
MIXA80WB1200TEH
IXYS reserves the right to change limits, test conditions and dimensions.
0123
0
10
20
30
40
50
60
70
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
10
20
30
40
50
60
VCE [V]
IC
[A]
0.001 0.01 0.1 1 10
0.01
0.1
1
10
0 25 50 75 100 125 150
10
100
1000
10000
100000
R
[Ω]
TVJ = 25°C
TVJ = 125°C
Fig. 13 Typ. output characteristics
VF [V]
IF
[A]
Fig. 14 Typ. forward characteristics
ZthJC
[K/W]
Fig. 15 Typ. transient thermal impedance
tP [s]
Fig.16 Typ. NTC resistance vs. temperature
TC [°C]
VGE = 15 V
TVJ = 125°C
diode
IGBT
TVJ = 25°C
Brake T7 & D7
Brake IGBT Brake FRD
RitiRiti
1 0.152 0.002 0.3413 0.002
2 0.0724 0.03 0.2171 0.03
3 0.0378 0.03 0.3475 0.03
4 0.1078 0.08 0.2941 0.08
