REVISIONS DOC. NO. SPC-FOO5 * Effective: 7/8/02 * DCP No: 1398 ALL_RIGHTS RESERVED. NO PORTION OF THIS PUBLICATION, @) WHETHER IN WHOLE OR IN PART CAN BE REPRODUCED mu it I c om WITHOUT one EXPRESS WRITTEN CONSENT OF SPC DCP #| REV DESCRIPTION DRAWN| DATE |CHECKD} DATE |APPRVD| DATE p 1447 A RELEASED HYO | 6/11/02 | JWM | 2/20/04 | JC 2/20/04 SPCFO05.DWG 1885 B UPDATED TO ROHS COMPLIANCE EQ | 02/03/08] HO | 2/6/06 | HO 2/6/06 Dimensions; A | B Cc D E F |G {iH J K L RoHS Min. 8.50 | 7.74 |6.09/0.40| - | 2.41 | 4.82] 0.71 | 0.73 | 12.70 | 42 Compliant Max. 9.39 | 8.50 | 6.60 | 0.53 | 0.88 | 2.66 | 5.33/0.86/1.02| - 48 This is a silicon PNP transistor in a TO39 type case designed primarily for A + amplifier and switching applications. This device features high breakdown PNP 3. COLLECTOR B voltage, low leakage current, low capacity, and beta useful over an extremely j wide current range. 2. BASE Cc { Electrical Characteristics: (T, = +25C Unless otherwise specified) 1 EMITTER - | | Parameter [Symbol _| Test Conditions [Min [Typ [Max [Unit _| E OFF Characteristics K Collector-Emitter Breakdown Voltage Vier)ceo Ic = 100mA, |, = 0 65 |- | - Vv | Emitter-Base Breakdown Voltage VieR)EBO kz = 10HA, Ip = 0 7 |- J - Vv Collector Cut-Off Current lcBo Veg = 9OV, Ir = 0 - |- 100 | WA Emitter Cut-Off Current leBo Vee = 7V, 16 =90 - |- 10 HA 1. EMITTER 2. BASE ON Characteristics, Note 1 3. COLLECTOR Vee = 10V, Ie = 100A 20 |- - - DC Current Gain hee Vee = 2V, le = 150mA 20 |- |200 |- 2 1 Vor = 10V, Ip = 500mA 20 |- |- 3 Collector-Emitter Saturation Voltage | Voereaty lg = 150mA, Ip = 15mA - |- {065 |V Absolute Maximum Ratings: Emi : V _ _ 4. Collector-Base Voltage, Voao = 90V Base-Emitter Saturation Voltage BE(sat) lg = 150mA, Ip = 15mMA - |- 1.4 Vv 2. Collector-Emitter Voltage, Vora = 65V Small-Signal Characteristics 3. Emitter-Base Voltage, Vego = 7V [ Small-Signal Current Gain he Voz =10V,Ig=50mA,f=20MHz |, |. |. |. | 4. Continuous Collector Current, I, = 1A = - 5. Total Device Dissipation (T, = +25C), Pp = 1W Switching Characteristics Derate above 25C = 5.72mW/C Storage Time ts Ipg=15mA -__|- [600 [ns 6. Total Device Dissipation (T, = +25C), Pp = 5W Turn-On Time ton Ip1=le2 - |- (110 Ins Derate above 25C = 26.6mW/C , Fall Time t, Ipo=15mA - |. |400 Ins 7. Operating Junction Temperature Range, T , = -65 to +200C 8. Storage Temperature Range, T.,, = -65 to +200C Note 1. Pulse Test: Pulse Width <300us, Duty Cycle $1%. 9. Thermal Resistance, Junction-to-Case, Rijc: 35C 10. Lead temperature (During Soldering, %q" from case, 60sec max), T,: 300C DISCLAIMER: TOLERANCES: DRAWN BY: DATE: DRAWING TITLE: . . ALL STATEMENTS AND TECHNICAL INFORMATION CONTAINED | UNI ESS OTHERWISE HISHAM ODISH 6/11/02 Transistor, Bipolar, Metal, TO-39, PNP HEREIN ARE BASED UPON INFORMATION AND/OR TESTS WE BELIEVE TO BE ACCURATE AND RELIABLE. SINCE SPECIFIED, CHECKED BY: DATE: | SIZE| DWG. NO. ELECTRONIC FILE REV USER. SHALL DETERMINE THE SUNABILIT OF THe Propuct | DIMENSIONS ARE JEFF_MCVICKER 2/20/04] A 2N4036 35C0711.DWG | B FOR THE INTENDED USE AND ASSUME ALL RISK AND FOR REFERENCE APPROVED BY: DATE: LIABILITY WHATSOEVER IN CONNECTION THEREWITH. PURPOSES ONLY. j we JOHN COLE 2/20/04 | SCALE: NTS U.0.M.: Millimeters SHEET: 1 OF 1