PolarPTM Power MOSFET IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P P-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G VDSS ID25 RDS(on) TO-220 (IXTP) G G D(TAB) D S Test Conditions Maximum Ratings VDSS TJ = 25C to 150C - 500 V VDGR TJ = 25C to 150C, RGS = 1M - 500 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C - 10 A IDM TC = 25C, Pulse Width Limited by TJM - 30 A IAR TC = 25C - 10 A EAR TC = 25C 50 mJ EAS TC = 25C 1.5 J dV/dt IS IDM, VDD VDSS, TJ 150C 10 V/ns PD TC = 25C 300 W -55 ... +150 150 -55 ... +150 C C C 300 260 C C 1.13/10 Nm/lb.in. 6.0 5.5 3.0 2.5 g g g g TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-3P,TO-220 & TO-247) Weight TO-247 TO-3P TO-220 TO-263 G D(TAB) S D = Drain TAB = Drain z z z z z z z z International Standard Packages Fast Intrinsic Diode Dynamic dV/dt Rated Avalanche Rated Rugged PolarPTM Process Low QG and Rds(on) Characterization Low Drain-to-Tab Capacitance Low Package Inductance Advantages z Easy to Mount Space Savings High Power Density Applications BVDSS VGS = 0V, ID = - 250A - 500 VGS(th) VDS = VGS, ID = - 250A - 2.0 V IGSS VGS = 20V, VDS = 0V 100 nA IDSS VDS = VDSS, VGS = 0V - 10 A - 250 A RDS(on) VGS = -10V, ID = 0.5 * ID25, Note 1 z (c) 2009 IXYS CORPORATION, All Rights Reserved D Features z Characteristic Values Min. Typ. Max. TJ = 125C D(TAB) S G = Gate S = Source z Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) D TO-3P (IXTQ) Symbol TJ TJM Tstg - 500V - 10A 1 TO-247 (IXTH) S D(TAB) = = - 4.0 1 V z z z z High-Side Switches Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators DS99911B(03/09) IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 6.5 VDS = -10V, ID = 0.5 * ID25, Note 1 Ciss Coss 11 S 2840 pF 275 pF 42 pF 20 ns 28 ns 52 ns 44 ns 50 nC 17 nC 18 nC VGS = 0V, VDS = - 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5 * VDSS, ID = 0 .5 * ID25 RG = 3.3 (External) Qg(on) Qgs VGS = -10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd 0.42 C/W RthJC RthCS (TO-3P & TO-247) 0.21 C/W (TO-220) 0.50 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V - 10 A ISM Repetitive, Pulse Width Limited by TJM - 40 A VSD IF = - 5A, VGS = 0V, Note 1 -3 V trr QRM IRM IF = - 5A, -di/dt = -100A/s 414 5.90 - 28.6 VR = -100V, VGS = 0V ns C A Note 1: Pulse test, t 300s; duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P TO-263 (IXTA) Outline TO-247 (IXTH) Outline P 1 2 3 e Terminals: 1 - Gate Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 TO-3P (IXTQ) Outline TO-220 (IXTP) Outline Pins: 1 - Gate 2 - Drain (c) 2009 IXYS CORPORATION, All Rights Reserved 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C -10 -26 VGS = -10V - 7V -9 -22 -8 -20 -7 - 7V -18 ID - Amperes ID - Amperes VGS = -10V - 8V -24 - 6V -6 -5 -4 -16 -14 -12 - 6V -10 -8 -3 -6 - 5V -2 -4 -1 0 0 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 0 -4 -8 -16 -20 -24 -28 VDS - Volts Fig. 3. Output Characteristics @ 125C Fig. 4. RDS(on) Normalized to ID = - 5A vs. Junction Temperature -32 2.4 VGS = -10V - 7V -9 VGS = -10V 2.2 -8 RDS(on) - Normalized 2.0 -7 - 6V -6 -5 -4 -3 - 5V 1.8 I D = -10A 1.6 I D = - 5A 1.4 1.2 1.0 -2 0.8 -1 0.6 0.4 0 0 -2 -4 -6 -8 -10 -12 -14 -16 -50 -18 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = - 5A vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature -11 2.4 -10 VGS = -10V 2.2 -9 TJ = 125C 2.0 -8 ID - Amperes RDS(on) - Normalized -12 VDS - Volts -10 ID - Amperes - 5V -2 1.8 1.6 1.4 -7 -6 -5 -4 -3 1.2 -2 TJ = 25C 1.0 -1 0.8 0 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 ID - Amperes IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. -50 -25 0 25 50 75 TJ - Degrees Centigrade 100 125 150 IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P Fig. 7. Input Admittance Fig. 8. Transconductance 24 -16 TJ = - 40C 22 -14 20 18 16 -10 -8 g f s - Siemens ID - Amperes -12 TJ = 125C 25C - 40C -6 -4 25C 14 12 125C 10 8 6 4 -2 2 0 -3.5 0 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 0 -2 -4 -6 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode -10 -12 -14 -16 -18 Fig. 10. Gate Charge -10 -30 VDS = - 250V -9 -25 I D = - 5A -8 I G = -1mA -7 VGS - Volts -20 IS - Amperes -8 ID - Amperes -15 TJ = 125C -10 TJ = 25C -6 -5 -4 -3 -2 -5 -1 0 0 -0.5 -1 -1.5 -2 -2.5 -3 0 -3.5 5 10 15 20 25 30 35 40 45 50 QG - NanoCoulombs VSD - Volts Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance -100.0 10,000 f = 1 MHz 25s Ciss - 10.0 1,000 Coss 100 100s ID - Amperes Capacitance - PicoFarads RDS(on) Limit 1ms 10ms -1.0 DC 100ms TJ = 150C TC = 25C Single Pulse Crss 10 0 -5 -10 -15 -20 -25 VDS - Volts (c) 2009 IXYS CORPORATION, All Rights Reserved -30 -35 -40 - 0.1 - 10 - 100 VDS - Volts - 1000 IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - C / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_10P50P(B5)5-21-08-B