2SD1623T-TD-E - ON Semiconductor

2SB1123 / 2SD1623

No.1727-1/5

Applications

•Voltage regulators, relay drivers, lamp drivers, electrical equipment.

Features

•Adoption of FBET, MBIT processes.

•Low collector-to-emitter saturation voltage.

•Large current capacity and wide ASO.

•Fast switching speed.

•The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further

miniaturization.

Specifications ( ) : 2SB1123

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Collector-to-Base Voltage VCBO (--)60 V

Collector-to-Emitter Voltage VCEO (--)50 V

Emitter-to-Base Voltage VEBO (--)6 V

Collector Current IC(--)2 A

Collector Current (Pulse) ICP (--)4 A

Collector Dissipation PC0.5 W

Mounted on a ceramic board (250mm

✕0.8mm)

1.3 W

Junction Temperature Tj 150 °C

Storage Temperature Tstg --55 to +150 °C

Marking 2SB1123 : BF

2SD1623 : DF

www.semiconductor-sanyo.com/network

Ordering number : EN1727E

31010EA TK IM / N1501 TS IM / 92098 HA (KT) / 4107 KI / N275 KI / 3045 MW, TS

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer

s products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer

s products or

equipment.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

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SANYO Semiconductors

DATA SHEET

2SB1123 / 2SD1623

PNP / NPN Epitaxial Planar Silicon Transistors

High-Current Switching Applications

2SB1123 / 2SD1623

No.1727-2/5

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions Ratings Unit

min typ max

Collector Cutoff Current ICBO VCB=(--)50V, IE=0A (--)100 nA

Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)100 nA

DC Current Gain hFE1V

CE=(--)2V, IC=(--)100mA 100* 560*

hFE2V

CE=(--)2V, IC=(--)1.5A 40

Gain-Bandwidth Product fTVCE=(--)10V, IC=(--)50mA 150 MHz

Output Capacitance Cob VCB=(--)10V, f=1MHz (22)12 pF

Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)1A, IB=(--)50mA (--0.3)0.15 (--0.7)0.4 V

Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)1A, IB=(--)50mA (--)0.9 (--)1.2 V

Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10μA, IE=0A (--)60 V

Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞(--)50 V

Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10μA, IC=0A (--)6 V

Turn-ON T ime ton See specified Test Circuit. (60)60 ns

Storage T ime tstg See specified Test Circuit. (450)550 ns

Fall T ime tfSee specified Test Circuit. (30)30 ns

*: The 2SB1123 / 2SD1623 are classified by 100mA hFE as follows:

Rank R S T U

hFE 100 to 200 140 to 280 200 to 400 280 to 560

Package Dimensions Switching Time Test Circuit

unit : mm (typ)

7007B-004

25V--5V

50Ω

INPUT

OUTPUT

RL=50Ω

100μF 470μF

PW=20μs

IC=10IB1= --10IB2=500mA

(For PNP, the polarity is reversed)

IB1

D.C.≤1%

IB2

2SB1123 / 2SD1623

No.1727-3/5

--2.4

--1.6

--1.2

--0.8

--0.4

--2.0

00 --0.4 --0.8 --2.4--2.0--1.6--1.2

IC -- VCE

IB=0mA

ITR08891

2SB1123

Pulse

--2mA

--8mA

--6mA

--4mA

--20mA

--10mA

--50mA

--1200

--800

--600

--400

--200

--1000

00 --2 --4 --12--10--8--6

IC -- VCE

IB=0mA

ITR08893

2SB1123

Pulse

--3mA

--2mA

--1mA

--7mA

--6mA

--5mA

--4mA

1200

800

600

400

200

1000

0024 121086

IC -- VCE

IB=0mA

ITR08894

2SD1623

Pulse

3mA

2mA

1mA

7mA

6mA

5mA

4mA

2.4

1.6

1.2

0.8

0.4

2.0

00 0.4 0.8 2.42.01.61.2

IC -- VCE

IB=0mA

ITR08892

2SD1623

Pulse

2mA

8mA

4mA

25mA

15mA

50mA

40mA

Collector-to-Emitter Voltage, VCE -- V

Collector Current, IC -- A

Collector-to-Emitter Voltage, VCE -- V

Collector Current, IC -- A

Collector-to-Emitter Voltage, VCE -- V

Collector Current, IC -- mA

Collector-to-Emitter Voltage, VCE -- V

Collector Current, IC -- mA

hFE -- IC

1000

100

23 5

--10 23 5 5

--100 2377 --1000 ITR08897

2SB1123

VCE= --2V

hFE -- IC

1000

100

23 5

10 23 5 5

100 2377 1000 ITR08898

2SD1623

VCE=2V

Collector Current, IC -- mA

DC Current Gain, hFE

Collector Current, IC -- mA

DC Current Gain, hFE

0 --0.2 --0.4 --0.6 --0.8 --1.2--1.0

--1200

--1000

--800

--600

--400

--200

IC -- VBE

ITR08895

2SB1123

VCE= --2V

0 0.2 0.4 0.6 0.8 1.21.0

1200

1000

800

600

400

200

IC -- VBE

ITR08896

2SD1623

VCE=2V

Base-to-Emitter Voltage, VBE -- V

Collector Current, IC -- mA

Base-to-Emitter Voltage, VBE -- V

Collector Current, IC -- mA

2SB1123 / 2SD1623

No.1727-4/5

fT -- IC

Cob -- VCB

--1.0 --10

100

2735 --100

2735

ITR08901

1000

100

23 5

--10 23 5

--100 2377 --1000 ITR08899

2SB1123

VCB=10V

2SB1123

f=1MHz

fT -- IC

1000

100

23 5

10 23 5

100 2377 1000 ITR08900

2SD1623

VCB=10V

Cob -- VCB

1.0 10

100

2735 100

2735

ITR08902

2SD1623

f=1MHz

Collector Current, IC -- mA

Gain-Bandwidth Product, fT -- MHz

Collector Current, IC -- mA

Gain-Bandwidth Product, fT -- MHz

Collector-to-Base Voltage, VCB -- V

Output Capacitance, Cob -- pF

Collector-to-Base Voltage, VCB -- V

Output Capacitance, Cob -- pF

A S O

1.0

0.1

21.0 10

2573100

257357

ITR08906

0.8

0.6

0.5

0.4

0.2

0 20 40 60 100 120 16014080

PC -- Ta

IT04221

2SB1123 / 2SD1623

IC=2A

ICP=4A

10ms

1ms

100ms

DC operation

2SB1123 / 2SD1623

Ta=25°C

Single pulse

For PNP, minus sign is omitted

Mounted on a ceramic board (250mm

✕0.8mm)

Collector Current, IC -- A

Collector-to-Emitter Voltage, VCE -- V

Collector Dissipation, PC -- W

Ambient Temperature, Ta

-- °C

--1.0

--0.1

--0.01

--100

--10

23 57 7

--10 23 35

--100 2

--1000 ITR08903

VCE(sat) -- IC2SB1123

IC / IB=20

1.0

0.1

0.01

100

23 57 7

10 23 35

100 2

1000 ITR08904

VCE(sat) -- IC2SD1623

IC / IB=20

Collector Current, IC -- mA

Collector-to-Emitter

Saturation Voltage, VCE(sat) -- V

Collector Current, IC -- mA

Collector-to-Emitter

Saturation Voltage, VCE(sat) -- V

No heat sink

2SB1123 / 2SD1623

No.1727-5/5

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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.

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This catalog provides information as of March, 2010. Specifications and information herein are subject

to change without notice.

1.6

1.4

1.2

1.3

0.8

1.0

0.6

0.4

0.2

0 20 40 60 100 120 16014080

PC -- Ta

IT04222

2SB1123 / 2SD1623

Collector Dissipation, PC -- W

Ambient Temperature, Ta

-- °C

Mounted on a ceramic board(250mm

✕0.8mm)