DATA SH EET
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
1997 Aug 14
DISCRETE SEMICONDUCTORS
BUX84F; BUX85F
Silicon diffused power transistors
1997 Aug 14 2
Philips Semiconductors Product specification
Silicon diffused power transistors BUX84F; BUX85F
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT186 package with
electrically isolated mounting base.
APPLICATIONS
Converters
Inverters
Switching regulators
Motor control systems.
PINNING
PIN DESCRIPTION
1 base
2 collector
3 emitter
mb mounting base;
electrically isolated
from all pins
Fig.1 Simplified outline
(SOT186) and symbol.
MBK109
123
3
2
1
MBB008
QUICK REFERENCE DATA
THERMAL CHARACTERISTICS
Notes
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
2. Mounted with heatsink compound and 30 ±5 N force on centre of package.
ISOLATION CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM collector-emitter peak voltage VBE =0
BUX84F 800 V
BUX85F 1000 V
VCEO collector-emitter voltage open base
BUX84F 400 V
BUX85F 450 V
VCEsat collector-emitter saturation voltage see Fig.4 1V
I
Csat collector saturation current 1A
I
Ccollector current (DC) 2A
I
CM collector current (peak value) 3A
P
tot total power dissipation Th25 °C18 W
tffall time 0.4 −µs
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-h thermal resistance from junction to external heatsink note 1 7.2 K/W
note 2 4.7 K/W
Rth j-a thermal resistance from junction to ambient 55 K/W
SYMBOL PARAMETER TYP. MAX. UNIT
VisolM isolation voltage from all terminals to external heatsink (peak value) 1500 V
Cisol isolation capacitance from collector to external heatsink 12 pF
1997 Aug 14 3
Philips Semiconductors Product specification
Silicon diffused power transistors BUX84F; BUX85F
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCESM collector-emitter peak voltage VBE =0
BUX84F 800 V
BUX85F 1000 V
VCEO collector-emitter voltage open base
BUX84F 400 V
BUX85F 450 V
ICcollector current (DC) 2A
I
CM collector current (peak value) 3A
I
Bbase current (DC) 0.75 A
IBM base current (peak value) 1A
P
tot total power dissipation Th25 °C; note 1 18 W
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCEOsust collector-emitter sustaining voltage IC= 100 mA; IBoff =0;
L = 25 mH; see Figs 2 and 3
BUX84 400 −−V
BUX85 450 −−V
V
CEsat collector-emitter saturation voltage IC= 0.3 A; IB=30mA;
see Fig.4 −−0.8 V
IC= 1 A; IB= 200 mA;
see Fig.4 −−1V
V
BEsat base-emitter saturation voltage IC= 1 A; IB= 200 mA;
see Fig.5 −−1.1 V
ICES collector-emitter cut-off current VCE =V
CESmax; VBE =0 −−0.2 mA
VCE =V
CESmax; VBE =0;
T
j= 125 °C−−1.5 mA
IEBO emitter-base cut-off current VEB =5V; I
C=0 −−1mA
h
FE DC current gain VCE =5V; I
C= 5 A; see Fig.6 15 −−
V
CE =5V; I
C= 100 mA;
see Fig.6 20 50 100
fTtransition frequency VCE =10V; I
C= 200 mA;
f=1MHz 20 MHz
1997 Aug 14 4
Philips Semiconductors Product specification
Silicon diffused power transistors BUX84F; BUX85F
Switching times resistive load (see Fig.7)
ton turn-on time ICon = 1 A; IBon = 200 mA;
IBoff =400 mA; VCC = 250 V 0.2 0.5 µs
tsstorage time ICon = 1 A; IBon = 200 mA;
IBoff =400 mA; VCC = 250 V 2 3.5 µs
tffall time ICon = 1 A; IBon = 200 mA;
IBoff =400 mA; VCC = 250 V 0.4 −µs
I
Con = 1 A; IBon = 200 mA;
IBoff =400 mA; VCC = 250 V;
Tmb =95°C
−−1.4 µs
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Fig.2 Test circuit for collector-emitter
sustaining voltage.
a
ndbook, halfpage
MGE252
+ 50 V
100 to 200
30 to 60 Hz
L
6 V
oscilloscope
vertical
horizontal
1
300
Fig.3 Oscilloscope display for collector-emitter
sustaining voltage.
handbook, halfpage
MGE239
IC
(mA)
250
200
100
0min
VCEOsust
VCE (V)
1997 Aug 14 5
Philips Semiconductors Product specification
Silicon diffused power transistors BUX84F; BUX85F
Fig.4 Collector-emitter saturation voltage as a function of base current; typical values.
handbook, full pagewidth
0.3
IB (A)
4(1)
3
00
VCEsat
(V)
0.05 0.25
MGB908
2
1
0.20.1 0.15
(2) (3) (4)
(1) IC= 0.3 A. (2) IC= 0.5 A. (3) IC= 0.7 A. (4) IC=1A. T
j=25°C; solid line: typical values; dotted line: maximum values.
Fig.5 Base-emitter saturation voltage as a
function of emitter current; typical values.
Tj=25°C.
(1) IC=1A.
(2) IC= 0.5 A.
(3) IC= 0.3 A.
handbook, halfpage
0 300
1.0
0.5
MGB904
0.75
100 200
VBEsat
(V)
IB (mA)
(2)
(3)
(1)
Fig.6 DC current gain; typical values.
handbook, halfpage
102101
1
102
10
1
hFE
IC (A) 10
MGB879
typ
1997 Aug 14 6
Philips Semiconductors Product specification
Silicon diffused power transistors BUX84F; BUX85F
Fig.7 Switching time waveforms with
resistive load.
handbook, halfpage
MBB731
t
90%
10%
90%
10%
IC
IB
IB on
IB off
IC on
tr 30 ns
ts
tf
ton
t
Fig.8 Test circuit resistive load.
tp=20µs; T = 2 ms; VIM =15V.
handbook, full pagewidth
MGE253
Vi
VCC
250V
100
100
30
50
200
250
680
µF
680
µF
100
µF
D.U.T.
BD139
BD140
+25 V
T
VIM
tp
1997 Aug 14 7
Philips Semiconductors Product specification
Silicon diffused power transistors BUX84F; BUX85F
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT186 TO-220
0 5 10 mm
scale
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3 lead TO-220 exposed tabs SOT186
A
A1
Q
c
Note
1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned.
D
D1
L
L2
L1
m
q
e1
e
bwM
123
E
1
E
P
b
1
UNIT D
b1D1eqQPL
cL2
e1
A
5.08
mm 4.4
4.0
A1
2.9
2.5
b
0.9
0.7 1.5
1.3 0.55
0.38 17.0
16.4 7.9
7.5
E
10.2
9.6 5.7
5.3
E1
2.54 14.3
13.5 10 0.4
L1(1)
4.8
4.0 1.4
1.2 4.4
4.0
w
3.2
3.0
m
0.9
0.5
DIMENSIONS (mm are the original dimensions)
97-06-11
1997 Aug 14 8
Philips Semiconductors Product specification
Silicon diffused power transistors BUX84F; BUX85F
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1997 Aug 14 9
Philips Semiconductors Product specification
Silicon diffused power transistors BUX84F; BUX85F
NOTES
1997 Aug 14 10
Philips Semiconductors Product specification
Silicon diffused power transistors BUX84F; BUX85F
NOTES
1997 Aug 14 11
Philips Semiconductors Product specification
Silicon diffused power transistors BUX84F; BUX85F
NOTES
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Printed in The Netherlands 137067/00/01/pp12 Date of release: 1997 Aug 14 Document order number: 9397 750 02724