SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE BVceEo hee Vce(saT) fr Ch @10V, Pr Device Type @10mA Typical 1 MHz @ 25C (Vv) Min.-Max. @ 1,Vc_(V) |(V) Max. @ Ic, Ig (MHz) Typical (Pf) (mW) 2N2711 2N2712 2N2713 2N2714 2N2923 soon 2N2924 2N2925 2N2926 2N3390 2N3391 DADAOG ~~ NS NS SI OS 2N3391A 2N3392 2N3393 2N3394 2N3395 DHHAOAD ~~ NSN 2N3396 2N3397 2N3398 2N3402 2N3403 aann ws 2N3404 2N3405 2N3414 2N3415 2N3416 oooag o 2N3417 2N3662 2N3663 2N3843 2N3843A NNwoOoM 2N3844 2N3844A 2N3845 2N3845A 2N3854 SNM NN = 2N3854A 2N3855 2N3855A 2N3856 2N3856A NANNN 2N3858 2N3858A 2N3859 2N3859A 2N3860 2N3877 2N3877A 2N3900 2N3900A 2N3901 www MN NNNNN 101 Silicon Transistors | 2N3858A,9A The General Electric 2N3858A and 2N3859A are NPN silicon, planar, epitaxial, passivated transistors. They are well suited as high voltage, high gain amplifiers and switches. Useful applications include drivers for audio output stages, high level video amplifiers and output stages of operational amplifiers. Selected higher voltage units are available. absolute maximum rati ngs: (25C) (unless otherwise specified) Voltages Collector to Emitter Vexo 60 volts Emitter to Base Vuso 6 volts Collector to Base Voso 60 volts Current Collector (Steady State) * Ic 100 mA Dissipation Total Power (Free air at 25C) ** Pr 360 mW Temperature Storage Tsre 55 to 150 C Operating Ts 125 C Lead Soldering, 4s + %2 from Ti 260 C case for 10 seconds max. *Determined from power limitations due to saturation voltage at this current. **Derate 3.6 mW/C increase in ambient temperature above 25C. electrical characteristics: (25C) (unless otherwise specified) STATIC CHARACTERISTICS Sym. Collector Cutoff Current (Vcs = 60V) Tczo Ta = 100C) Icso Emitter Cutoff Current (Ves = 6V) Tazo Forward Current Transfer Ratio 2N3858A (Vor = 1V, Ic = 10 mA) hrs 2N3859A (Von = 1V, Ic = 10 mA) hre 2N3858A (Ver = 4.5V, I: = 2mA) hre 2N3859A (Vou = 4.5V, Ic = 2mA) hre CollectorBase Breakdown Voltage (Ic = 0.1 mA) BVcso EmitterBase Breakdown Voltage (Iz = 0.1 mA) BVxzo CollectorEmitter Breakdown Voltage (Ic = 1 mA) BVcxo Collector Saturation Voltage (Ic = 10 mA, In = 1 mA) Vonwsam BaseEmitter Voltage (Ic = 10 mA, Vee = 1 volt) Voexrcrive) BaseEmitter Voltage (Ic = 10 mA, In = 1 mA) Vana DYNAMIC CHARACTERISTICS Gain Bandwidth Product (Vcz = 10V, Ic = 2 mA) 2N3858A fr 2N3859A fr ColflectorBase Time Constant (Vcze = 10V, Ic = 2 mA) rr'Ce Output Capacitance, Common Base (Vcs = 10V, In = 0, f = 1 MHz) Cobo Input Capacitance, Common Base (Vip = 0.5V, In = 0, f = 1 MHz) Ciro Case Capacitance 387 NOTE 1: Lead diameter is controlled in the zone between .070 and .250 from the seat- ing plane. Between .250 and end of lead a max. of 021 is held. ALL DIMEN. IN INCHES AND ARE REFERENCE UNLESS TOLERANCED 3 LEADS oir #502 (NOTE 1) Min. Typ. 60 100 60 100 60 6 60 -68 70 90 125 90 140 65 2.0 2.7 10 0.66 075 1055 265 tt -225 -500 SEATING MIN PLANE J p 100% .008 090 a 140 Te nt a 50 10 0.1 120 200 0.125 78 250 250 150 4.0 volts volts volts volts volts volts | 2N3858A, 9A | FORWARD CURRENT TRANSFER RATIO vs. COLLECTOR CURRENT 2N3858A 280 ry 2 3 Voge 2 4.5 2N3858A = a 8 8 Oo a hee ~ FORWARD CURRENT TRANSFER RATIO 2 40 Ol 02 05 a 2 5 t 2 5 10 20 sO 100 Ig ~ COLLECTOR CURRENT - mA 2N3859A Ta + 100C Veg 7 4.5 2N3859A hee - FORWARD CURRENT TRANSFER RATIO OF 02 08 ' 2 5 ' 2 5 to 20 50 100 Ig - COLLECTOR CURRENT ~ mA VorisatT) vs. Collector Current we a we 3 x & a 3 2N3859A Vee (sot) COLLECTOR EMITTER VOLTAGE SATURATION-VOLTS & 8 1 1.0 lo wo Ig -COLLECTOR CURRENT ~mA 388 GAIN BAND-WIDTH PRODUCT VS. COLLECTOR CURRENT 2N3858A 2N3858A Vee COLLECTOR VOLTAGE - VOLTS Ol 02 OS A 2 5 | 2 5 lo 30 Ig COLLECTOR CURRENT -mA 2N3859A = 299 88g 2 8 8 Ho 8 $388 sss8sB sg & Voge ~ COLLECTOR VOLTAGE - VOLTS Ol 02 05 4 2 5 | 2 5 lo 30 I, - COLLECTOR CURRENT - mA Vax(sat), Varjrive) vs. Collector Current BASE EMITTER VOLTAGE - VOLTS ig - COLLECTOR CURRENT - mA TYPICAL ELECTRICAL CHARACTERISTICS hre logo vs. INPUT AND OUTPUT vs. TEMPERATURE CAPACITANCE TEMPERATURE Veg - VOLTAGE EMITTER TO BASE - VOLTS Vogt 9.54 1,7 1OMA 2N3BSBA , 2N3859A 2NZa59R, anse5aa Cop - OUTPUT CAPACITANCE - pF Cyp INPUT CAPACITANCE - pF hee ~ NORMALIZED TO 25C VALUE Igo - COLLECTOR CUYOFF CURRENT - oA Vog VOLTAGE COLLECTOR TO BASE - VOLTS 902 35 358s 8 38 98 125 Yq AMBIENT TEMPERATURE - *C Ty: AMBIENT TEMPERATURE - C COLLECTOR CHARACTERISTICS 2N3858A 2N3859A Ul 1] 10 a 9 fo _ i e Z 7 7 z 5 6 Oo 6 5 5 a o F 4 5 a 4 3 33 a oO 3 2 9 2 Vo o | | Oo 20 40 60 80 100 Oo 20 40 60 80 100 Voce - VOLTS Voce ~VOLTS TYPICAL SMALL SIGNAL CHARACTERISTICS f = 1 Ko, Vox = 10V, |, = 2mA, T, = 25C Symbol Characteristics 2N3858A 2N3859A Units hi. Input Resistance 1680 2480 ohms hoe Output Conductance 8.2 11 xumhos hre Forward Current Transfer Ratio 110 175 hre Voltage Feedback Ratio 8.2 10.5 X105 h PARAMETERS vs. Vox h PARAMETERS vs. TEMPERATURE h PARAMETERS vs. Io 2.0 2N3856A S24 2N3859A . 4 z, 3 = S22 2 3 et = 2 2. 2 a 2 & _ 2 & e 8 a wu z N : 3 2 2 < z Z 2 2 = 2n3e5aa 2 3 w 2N3B5S9A o yg - z a = uo = w = = die & Mte 50 -25 oO +28 +50 +75, HOO = "0 5 10 Is 20 25 30 TAT AMBIENT TEMPERATURE C 4 18 2 3 4 6 61 182 3 4 6 610 : I~ COLLECTOR CURRENT -ma Voce - COLLECTOR VOLTAGE - VOLTS 389 Vo E 1 OV lo = 2mA Yie Input Admittance vs. Frequency (OUTPUT SHORT CIRCUIT) Yoe Output Admittance vs. Frequency (INPUT SHORT CIRCUIT) Yie Forward Transfer Admittance vs. Frequency (OUTPUT SHORT CIRCUIT) Yre Reverse Transfer Admittance vs. Frequency (INPUT SHORT CIRCUIT) TYPICAL COMMON EMITTER tig 7 INPUT ADMITTANCE - mmho doe s i 2 5 10 20 1 ~ FREQUENCY - Me You ~OUTPUT ADMITTANCE - pmho 1'- FREQUENCY - Mc FORWARD TRANSFER ADMITTANCE -mmho Ne r 1 - FREQUENCY - Me REVERSE TRANSFER ADMITTANCE - ymho tae 5s 2 5 t 2 1 = FREQUENCY Me 390 = INPUT ADMITTANCE - pho Ne > OUTPUT ADMITTANCE - ymhe You = FORWARD TRANSFER ADMITTANCE - mmho Me ~ REVERSE TRANSFER ADMITTANCE - ymbo tre WA 12 2 1, COLLECTOR CURRENT - mA 1, > COLLECTOR CURRENT - ma 4681 2 46810 20 y PARAMETERS $0 100 Tg > COLLECTOR CURRENT - ma ~G_ LESS THAN 0) ymbo S t Tg 7 COLLECTOR CURRENT - mA 120 2N3858A, 9A f = 250 KHz Yie Input Admittance vs Collector Current (OUTPUT SHORT CIRCUIT) Yoe Output Admittance vs. Collector Current (INPUT SHORT CIRCUIT) Yre Forward Transfer Admittance vs. Collector Current (OUTPUT SHORT CIRCUIT) Yre Reverse Transfer Admittance vs. Collector Current (INPUT SHORT CIRCUIT)