APTLGF350A608G VCES = 600V IC = 350A @ Tc = 80C Phase leg Intelligent Power Module Application Motor control Uninterruptible Power Supplies Switched Mode Power Supplies Amplifier Features Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA & SCSOA rated Integrated Fail Safe IGBT Protection (Driver) - Top Bottom input signals Interlock - Isolated DC/DC Converter 0/VBUS INL INH GND GND VDD VDD VBUS OUT Benefits Outstanding performance at high frequency operation Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Very high noise immunity (common mode rejection > 25kV/s) Galvanic Isolation: 3750V for the optocoupler 2500V for the transformer 5V logic level with Schmitt-trigger Input Single VDD=5V supply required Secondary auxiliary power supplies internally generated (15V, -6V) Optocoupler qualified to AEC-Q100 test guidelines RoHS compliant These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-8 APTLGF350A608G - Rev 3 October, 2012 Low stray inductance M5 power connectors High level of integration APTLGF350A608G All ratings @ Tj = 25C unless otherwise specified 1. Inverter Power Module Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage Pulsed Collector Current Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Max ratings 600 430 350 700 1562 Reverse Bias Safe Operating Area Tj = 125C 800A@550V IC Continuous Collector Current ICM PD RBSOA Unit V A W Electrical Characteristics Symbol Characteristic Test Conditions ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 600V VCE(sat) Collector Emitter Saturation Voltage VDD = VIN = 5V IC = 400A Min Tj = 25C Tj = 125C Tj = 25C Typ 2 2.2 Tj = 125C Max 0.5 1.5 2.5 Unit mA V Dynamic Characteristics Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGE = 0V VCE = 25V f = 1MHz Tr Rise Time Tf Fall Time Tr Tf Eon Rise Time Fall Time Turn-on Switching Energy Eoff Turn-off Switching Energy Inductive Switching (25C) VDD = VIN = 5V VBus = 400V ; IC = 400A Inductive Switching (125C) VDD = VIN = 5V VBus = 400V IC = 400A Isc Short Circuit data RthJC VDD = VIN = 5V; VBus =360V tp 10s ; Tj = 125C Junction to Case thermal resistance Min Typ 17.2 1.88 1.6 Max nF 25 ns 30 25 45 17.2 ns mJ 14 1800 A 0.08 www.microsemi.com Unit C/W 2-8 APTLGF350A608G - Rev 3 October, 2012 Symbol Cies Coes Cres APTLGF350A608G Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF Maximum Reverse Leakage Current VR = 600V DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Err Reverse Recovery Energy RthJC Test Conditions IF = 400A IF = 400A VR = 300V di/dt =4800A/s Min 600 Typ Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C 400 1.6 1.5 Tj = 25C 125 Tj = 150C Tj = 25C 220 19 Tj = 150C Tj = 25C Tj = 150C 40 4.4 9.6 Max 350 500 Junction to Case thermal resistance Unit V A A 2 V ns C mJ 0.20 C/W 2. Driver Absolute maximum ratings Symbol VDD VINi IVDDmax fmax Parameter Max ratings 5.5 5.5 0.35 2 60 Supply Voltage Input signal voltage i=L, H VINi = 0V, i =L & H VDD=5V, VINH = /VINL ; Fout = 60kHz Maximum Switching Frequency Maximum Supply current Unit V A kHz Driver Electrical Characteristics PDD VISOL Characteristic Operating Supply Voltage Maximum Input Voltage Positive Going Threshold Voltage Negative Going Threshold Voltage Input Resistance * Turn On delay time Built in dead time Turn Off delay time Pulse Width Distortion Propagation Delay Difference between any two driver Primary to Secondary Isolation Test Conditions Min 4.5 -0.5 i = L, H Driver + IGBT Driver + IGBT Typ 5 5 3.2 1 1 1100 600 750 Max 5.5 5.5 Unit V V k ns 300 Td(on) - Td(off) -350 2500 350 ns VRMS * Low impedance guarantees good noise immunity. Including built in dead time. www.microsemi.com 3-8 APTLGF350A608G - Rev 3 October, 2012 Symbol VDD VINi(max) VINi (th+) VINi(th-) RINi Td(on) DT Td(off) PWD APTLGF350A608G 3. Package characteristics Symbol VISOL TJ TOP TSTG TC Characteristic Torque Mounting torque Wt Package Weight RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Operating Ambient Temperature Storage Temperature Range Operating Case Temperature To heatsink For terminals M5 M5 Min 4000 -40 -40 -40 -40 2 2 Typ Max 150 85 100 100 4.7 4 550 Unit V C N.m g www.microsemi.com 4-8 APTLGF350A608G - Rev 3 October, 2012 4. LP8 Package outline (dimensions in mm) APTLGF350A608G Typical IGBT Performance Curve Breakdown Voltage vs Junction Temp. Output characteristics Collector to Emitter Breakdown Voltage (Normalized) 250s Pulse Test < 0.5% Duty cycle 600 TJ=25C TJ=125C 400 200 VDD = 5V VIN = 5V 0 0 1 2 3 1.20 1.10 1.00 0.90 0.80 25 4 IC, Collector Current (A) Ic, DC Collector Current (A) 100 125 1000 400 300 200 100 800 600 400 200 0 0 25 50 75 100 125 0 150 Current Rise Time vs Collector Current tf, Fall Time (ns) VCE = 400V VDD = 5V VIN = 5V TJ=125C 40 20 0 100 200 300 400 500 ICE, Collector to Emitter Current (A) Turn-On Energy Loss vs Collector Current Eoff, Turn-off Energy Loss (mJ) 24 TJ=125C 16 TJ=25C 8 0 100 200 300 400 300 400 500 600 500 VCE = 400V VDD = 5V VIN = 5V 60 TJ = 125C 40 TJ = 25C 20 0 100 600 32 VCE = 400V VDD = 5V VIN = 5V 200 Current Fall Time vs Collector Current 80 80 60 100 VCE, Collector to Emitter Voltage (V) TC, Case Temperature (C) tr, Rise Time (ns) 75 Reverse Bias Safe Operating Area DC Collector Current vs Case Temperature 500 Eon, Turn-On Energy Loss (mJ) 50 TJ, Junction Temperature (C) VCE, Collector to Emitter Voltage (V) 600 ICE, Collector to Emitter Current (A) www.microsemi.com 24 200 300 400 500 ICE, Collector to Emitter Current (A) 600 Turn-Off Energy Loss vs Collector Current 20 VCE = 400V VDD = 5V VIN = 5V TJ = 125C 16 12 TJ = 25C 8 4 0 100 200 300 400 500 600 ICE, Collector to Emitter Current (A) 5-8 APTLGF350A608G - Rev 3 October, 2012 Ic, Collector Current (A) 800 APTLGF350A608G Capacitance vs Collector to Emitter Voltage Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) C, Capacitance (pF) 100000 Cies 10000 Coes 1000 Cres 100 0 10 20 30 40 50 70 VCE = 400V D = 50% VDD = 5V VIN = 5V TJ = 125C TC =75C 60 50 40 Limited by internal gate drive power dissipation 30 20 Hard switching 10 0 0 100 VCE, Collector to Emitter Voltage (V) 200 300 400 500 IC, Collector Current (A) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.08 0.9 0.06 0.7 0.04 0.5 0.3 0.02 Single Pulse 0.1 0.05 0 0.00001 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) www.microsemi.com 1 10 6-8 APTLGF350A608G - Rev 3 October, 2012 Thermal Impedance (C/W) 0.1 APTLGF350A608G Typical diode Performance Curve Forward Characteristic of diode Energy losses vs Collector Current 800 16 VR = 300V TJ = 150C 700 12 600 Err (mJ) IF (A) 500 400 300 TJ=150C 200 4 100 TJ=25C 0 0 0 0.4 8 0.8 1.2 1.6 VF (V) 2 0 2.4 200 400 600 800 IF (A) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.2 0.16 D = 0.9 0.7 0.12 0.5 0.08 0.3 0.04 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 7-8 APTLGF350A608G - Rev 3 October, 2012 Thermal Impedance (C/W) 0.24 APTLGF350A608G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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