APTLGF350A608G
APTLGF350A608G – Rev 3 October, 2012
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OUT0/VBUSVBUS
GND
VDD
GND
INL
VDD
INH
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
VCES = 600V
IC = 350A @ Tc = 80°C
Phase leg
Intelligent Power Module
Application
Motor control
Uninterruptible Power Supplies
Switched Mode Power Supplies
Amplifier
Features
Non Punch Through (NPT) FAST IGBT
- Low voltage drop
- Low tail current
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA & SCSOA rated
Integrated Fail Safe IGBT Protection (Driver)
- Top Bottom input signals Interlock
- Isolated DC/DC Converter
Low stray inductance
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Very high noise immunity
(common mode rejection > 25kV/µs)
Galvanic Isolation: 3750V for the optocoupler
2500V for the transformer
5V logic level with Schmitt-trigger Input
Single VDD=5V supply required
Secondary auxiliary power supplies internally generated
(15V, -6V)
Optocoupler qualified to AEC-Q100 test guidelines
RoHS compliant
APTLGF350A608G
APTLGF350A608G – Rev 3 October, 2012
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All ratings @ Tj = 25°C unless otherwise specified
1. Inverter Power Module
Absolute maximum ratings
Symbol Parameter Max ratings Unit
VCES Collector - Emitter Breakdown Voltage 600 V
TC = 25°C 430
IC Continuous Collector Current TC = 80°C 350
ICM Pulsed Collector Current TC = 25°C 700
A
PD Maximum Power Dissipation TC = 25°C 1562 W
RBSOA Reverse Bias Safe Operating Area Tj = 125°C 800A@550V
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Tj = 25°C 0.5
ICES Zero Gate Voltage Collector Current VGE = 0V
VCE = 600V Tj = 125°C 1.5
mA
Tj = 25°C 2 2.5
VCE(sat) Collector Emitter Saturation Voltage VDD = VIN = 5V
IC = 400A Tj = 125°C 2.2 V
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cies Input Capacitance 17.2
Coes Output Capacitance 1.88
Cres Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz 1.6
nF
Tr Rise Time 25
Tf Fall Time
Inductive Switching (25°C)
VDD = VIN = 5V
VBus = 400V ; IC = 400A 30
ns
Tr Rise Time 25
Tf Fall Time 45 ns
Eon Turn-on Switching Energy 17.2
Eoff Turn-off Switching Energy
Inductive Switching (125°C)
VDD = VIN = 5V
VBus = 400V
IC = 400A
14 mJ
Isc Short Circuit data VDD = VIN = 5V; VBus =360V
tp ≤ 10µs ; Tj = 125°C 1800 A
RthJC Junction to Case thermal resistance 0.08 °C/W
APTLGF350A608G
APTLGF350A608G – Rev 3 October, 2012
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Reverse diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 600 V
Tj = 25°C 350
IRM Maximum Reverse Leakage Current VR = 600V Tj = 150°C 500 µA
IF DC Forward Current Tc = 80°C 400 A
Tj = 25°C 1.6 2
VF Diode Forward Voltage IF = 400A Tj = 150°C 1.5 V
Tj = 25°C 125
trr Reverse Recovery Time
Tj = 150°C 220
ns
Tj = 25°C 19
Qrr Reverse Recovery Charge Tj = 150°C 40 µC
Tj = 25°C 4.4
Err Reverse Recovery Energy
IF = 400A
VR = 300V
di/dt =4800A/µs
Tj = 150°C 9.6 mJ
RthJC Junction to Case thermal resistance 0.20 °C/W
2. Driver
Absolute maximum ratings
Symbol Parameter Max ratings Unit
VDD Supply Voltage 5.5
VINi Input signal voltage i=L, H 5.5 V
VINi = 0V, i =L & H 0.35
IVDDmax Maximum Supply current VDD=5V, VINH = /VINL ; Fout = 60kHz 2
A
fmax Maximum Switching Frequency 60 kHz
Driver Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VDD Operating Supply Voltage 4.5 5 5.5 V
VINi(max) Maximum Input Voltage -0.5 5 5.5
VINi (th+) Positive Going Threshold Voltage 3.2
VINi(th-) Negative Going Threshold Voltage 1
V
RINi Input Resistance *
i = L, H
1 kΩ
Td(on) Turn On delay time Driver + IGBT 1100
DT Built in dead time 600
Td(off) Turn Off delay time Driver + IGBT 750
ns
PWD Pulse Width Distortion 300
PDD Propagation Delay Difference
between any two driver Td(on) - Td(off) -350 350
ns
VISOL Primary to Secondary Isolation 2500 VRMS
* Low impedance guarantees good noise immunity.
Including built in dead time.
APTLGF350A608G
APTLGF350A608G – Rev 3 October, 2012
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3. Package characteristics
Symbol Characteristic Min Typ Max Unit
VISOL RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 V
TJ Operating junction temperature range -40 150
TOP Operating Ambient Temperature -40 85
TSTG Storage Temperature Range -40 100
TC Operating Case Temperature -40 100
°C
To heatsink M5 2 4.7
Torque Mounting torque For terminals M5 2 4 N.m
Wt Package Weight 550 g
4. LP8 Package outline (dimensions in mm)
APTLGF350A608G
APTLGF350A608G – Rev 3 October, 2012
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Typical IGBT Performance Curve
Output characteristics
T
J
=25°C
T
J
=125°C
0
200
400
600
800
01234
Ic, Collector Current (A)
V
CE
, Collector to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
V
DD
= 5V
V
IN
= 5V
0.80
0.90
1.00
1.10
1.20
25 50 75 100 125
T
J
, Junction Temperature (°C)
Collector to Emitter Breakdown
Voltage (Normalized)
Breakdown Voltage vs Junction Temp.
0
100
200
300
400
500
25 50 75 100 125 150
T
C
, Case Temperature (°C)
Ic, DC Collector Current (A)
DC Collector Current vs Case Temperature
T
J
=125°C
0
20
40
60
80
100 200 300 400 500 600
I
CE
, Collector to Emitter Current (A)
tr, Rise Time (ns)
Current Rise Time vs Collector Current
V
CE
= 400V
V
DD
= 5V
V
IN
= 5V
T
J
= 25°C
T
J
= 125°C
0
20
40
60
80
100 200 300 400 500 600
I
CE
, Collector to Emitter Current (A)
tf, Fall Time (ns)
Current Fall Time vs Collector Current
V
CE
= 400V
V
DD
= 5V
V
IN
= 5V
T
J
=25°C
T
J
=125°C
0
8
16
24
32
100 200 300 400 500 600
I
CE
, Collector to Emitter Current (A)
E
on
, Turn-On Energy Loss (mJ)
Turn-On Energy Loss vs Collector Current
V
CE
= 400V
V
DD
= 5V
V
IN
= 5V
T
J
= 25°C
T
J
= 125°C
0
4
8
12
16
20
24
100 200 300 400 500 600
I
CE
, Collector to Emitter Current (A)
E
off
, Turn-off Energy Loss (mJ)
Turn-Off Energy Loss vs Collector Current
V
CE
= 400V
V
DD
= 5V
V
IN
= 5V
0
200
400
600
800
1000
0 100 200 300 400 500 600
I
C
, Collector Current (A)
Reverse Bias Safe Operating Area
V
CE
, Collector to Emitter Voltage (V)
APTLGF350A608G
APTLGF350A608G – Rev 3 October, 2012
www.microsemi.com 6-8
Cies
Cres
Coes
100
1000
10000
100000
0 1020304050
C, Capacitance (pF)
Capacitance vs Collector to Emitter Voltage
V
CE
, Collector to Emitter Voltage (V)
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Operating Frequency vs Collector Current
Hard
switching
0
10
20
30
40
50
60
70
0 100 200 300 400 500
I
C
, Collector Current (A)
F
max
,
O
p
eratin
g
Fre
q
uenc
y
(
kHz
)
V
CE
= 400V
D = 50%
V
DD
= 5V
V
IN
= 5V
T
J
= 125°C
T
C
=75°C
Limited by
internal gate
drive power
dissipation
APTLGF350A608G
APTLGF350A608G – Rev 3 October, 2012
www.microsemi.com 7-8
Typical diode Performance Curve
Energy losses vs Collector Current
0
4
8
12
16
0 200 400 600 800
IF (A)
Err (mJ)
V
R
= 300V
T
J
= 150°C
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
D = 0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.04
0.08
0.12
0.16
0.2
0.24
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration in Seconds
Thermal Impedance (°C/W)
Forward Characteristic of diode
T
J
=25°C
T
J
=150°C
0
100
200
300
400
500
600
700
800
0 0.4 0.8 1.2 1.6 2 2.4
VF (V)
IF (A)
APTLGF350A608G
APTLGF350A608G – Rev 3 October, 2012
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