+ GE CO/ STATIC PUR CMPNT 34UE D MM 3874584 0000114 & MEGESP TH25 -2| PG: 6.077 1/16/91 GE-SPCO High Power (781 77mm Silicon [C782 / C785 Controlled Rectifier WET IT (AV) 1650A 25008 VoRM/VARM 1800V - 4400V ay AMPLIFYING GATE The General Electric C781, 2 & 4 Series of Reverse Blocking Thyristors feature a nominal 77mm junction diameter design having an exclusive distributed linear amplifying gate and processed by the proven multi-diffusion technology to optimize high blocking voltage capability with optimized low on-state voltage and recovery characteristics. This series is designed specifically for phase control applications like DC motor control power supplies, cycloconverters and load commutated inverters. FEATURES . Optimized linear (diameter) pilot gate for high di/dt rating. @ Excellent withstand to high dv/dt voltage fronts. . THYRISTOR (SCR) PRESSPAK @ Excellent surge and [?t current ratings for ease of fusing. see package styles on page 8 @ Glazed-fluted ceramic package with welded metal to metal seal ____ height 1.0 inch C785 ; 1.4 inch C781, C782, C784 |: MAXIMUM ALLOWABLE RATINGS - A REPETITIVE PEAK OFF-STATE REPETITIVE PEAK OFF-STATE . TYPE AND REVERSE VOLTAGE AND REVERSE VOLTAGE Hs? Vornm/VrrM' VorM/VRRM! | Vim? @2KA lav Tj = -40C to +128C Ty = 0C to +125C Tj = 128C 8.3ma/10ms Te = 70C C784DD 4400 Volts 4500 Volts 1.85 V 26KA/24KA 1650A C784DC 4300 4400 C784DB ~ 4200 4300 C784DA 4100 4200 C784DP 4000 4100 C784CT 3900 4000 C784CN 3800 3900 C784CS 3700 3800 C784CM 3600 3700 C782LE 2500 2600 1.35V 3SKA/32KA 2300A C782LD 2400 2500 C782LC 2300 2400 C782LB 2200 2300 C78ILA . 2100 Voit 2200 Volt 1.20V 45KA/41.5KA 2500A C781L 2000 2100 C781PT 1900 2000 C781PN 1800 {900 Externally applied mounting force..........ccscccccsececssccecscevaseccenenees ee deeeeceneensenes 7000-9000 Ib, 31.1-40.0 KN DC Thermal Resistance Junction to case, Rthj-ceseeeeeeeesesesesereesees denen ee eneneeeeeneeeaeeeeesaneeeeereseneees 012 C/W Storage Temperature .......cscscceccececsscscevseccneseeseceseceessscegenseueestasseenestsuesesessesueessescece ~40 to +150C NOTES: 1. Sinusoidal waveform 50/60Hz. Device under test must be assembled with recommended mounting force to a heat dissipator at less than 0,3 C/ W. 2, Instantaneous peak values, half sine (8.3 ms - 10 ms) or trapezoidal (30 A/ys, $2.5 msec) 3. Non-repetitive surge current rating - crest of half sinewave. 4. Full cycle average current - continuous half sinewave @ $0/60Hz (see mounting instruction). @SHE D MM 3874564 0000115 & BEGESP7-25-a] GE CO/ STATIC PUR CMPNT C781 CHARACTERISTICS CHARACTERISTIC SYMBOL |UNITS | MIN. -] TYPE MAX.. :T&ST CONDITIONS Peak Off-state Current IpRM ma 10 Tj= 25C Gate Opened IpRM ma 180 -= 125C Gate Opened Peak Reverse Current IRRM ma 10 Tj= 25C Gate Opened IRRM ma . 130 " 2 t25C Gate Opened Criticat exponential rate of rise dv:dt Vous $00 Tj = 125C. Vp = 0.8VpRM of off-state voltage (higher rates : open gate may cause destructive switching). Delay Time td us 1,5 2.5 3.0 Tj = 125C. Vip = 1500V Gate Trigger Current \oT ma 250: Tj = 25C, Vp = RV DC Gate Trigger Voltage VGT Vv 4.2 , Non-Trigger Current IGpM -}| ma 15 Tj = 125C, Vp = 1000V Non-Trigger Voltage YGDM v 0.5 AC Crest Operational Gate IGA A Lt Gate source: Current. Voltage requirement VGA v 13 = open circuit - 30V short circuit - 2A + rise time ~ 0.5us ; - duration tp > td Conventional Circuit ty us 250 400 Te 125C, tp = 2000A Commutating Turn-off time -- tp.> Ims (with teverse voltage) dir'dt = 5A: ys Vr= 100V dv dt = 1000V us V reapplied = 1000V Holding Current ty ma 4 FF & 150 Tp 25C, dirdt = -.5ma, ys 24 % 90 105C, Erms = 7.5Vrms 20 x 78 125C, R= 10 ohms . : Freq = 60Hz Latching Current {th ma 250 "400 1000 T= 25C, .Gate Drive 155 250 620 105C, 30V. 10 ohms 130 .f 210 530 125C. duration [Sys &8 8 &8 5 ON-STATE PEAK CDRRENT 17 4KA) on - 9 1 2 3 MAXIMUM FORWARD CONDUCTION - CHARACTERISTIC ON-STATE 4 ON-STATE PEAK VOLTAGE. VM {V) ITSaa_ (KA) 6 ? 1s t ro 4 2 TIME BASE WIDTH OF HALF SINEWAVE (ma) o 3 NON-REPETITIVE Iga and It CAPABILITY FOR FUSE COORDINATION 10.6 8.66 2&6 166 It (AS) &GE CO/ STATIC PUR CMPNT S4E D MM 3874584 gooo1isy T MEGESP. 46 ai CONDUCTION ANGLE, y CONDUCTION ANGLE, 1200 180 5000 7 a 180 E a = 000 E z $ 1200 Oo > 800 & 5 3000 oc 90 z . 8 & 4 60 wi 2000 > 400 S 6 wy = 9 5 b 5 5 1000 5 ara $00 1000 1500 2000 2500 30K, 2000 3000 4000 $000 6000 7000 8000 PEAK CURRENT, [t (AMPERES) PEAK CURRENT, It (AMPERES) MAXIMUM FULL CYCLE AVERAGE POWER DISSIPATION FOR SINEWAVE CURRENT AT VARIOUS CONDUCTING ANGLES. EFFECT OF VARIABLE CONDUCTING AREA IS INCLUDED. (DIGITAL DATA IS AVAILABLE) , OVERLAP ANGLE, OVERLAP ANGLE, 1200 6 tt a 20 a = 5 40 Ha tm, > z eat = ty z 120 ma G4 Hol a. CONDUCTION ANGLE 5 120% + yo e #120" + y CONDUCTION ANGLE = 60 Hz 8 = 120 + 2 & sO Hz wi 5 J Oo 3 fe 3 1 500 1000 1500 2000 2500 1 2 3 4 6 7 6 PEAK GUARENT, IT (AMPERES) PEAK CURRENT. IT (KILOAMPERES) MAXIMUM FULL CYCLE AVERAGE POWER DISSIPATION FOR THREE PHASE RECTIFIER (120 CONDUCTION) AT SEVERAL OVERLAP ANGLES, y. EFFECT OF VARIABLE CONDUCTING : AREA tS INCLUDED. (DIGITAL DATA IS AVAILABLE) 2000 a 300 i @ 100 a 3 | CIRCUIT z 100 3 duet z 2 Z y ren MAXIMUM 125C 1000 ja Rs YC 2 beeen = 0 IT > 2000A ton > 2m sec 9 Cs X\ w g & | 8 * t 8 | \ a N MAXIMUM 25C Rs 2 VO > Vo. NQ # IRM ome (OHms) 's SSA . CONTINUOUS OPERATION 1 $00 J A 1. 10. 20, 100 200 300 CIRCUIT COMMUTATING dip/dt (A/uS) CIRCUIT COMMUTATING din/dt, (A/S) MAXIMUM ALLOWABLE REPETITIVE Di/DT AS FUNCTION OF ANODE VOLTAGE BIAS. LIMITATION ON ADDITIONAL SNUBBER DISCHARGE IS INDICATED. PEAK RECOVERY CURRENT VERSUS COMMUTATING CIRCUIT DI/DTGE CO/ STATIC PUR CNPNT C782 /C785 CHARACTERISTICS SHE D MM 3474584 0000117 1 MMGESP T-as-ul CHARACTERISTIC SYMBOL | UNITS | MIN. | TYPE MAX, TEST CONDITIONS Peak Off-state Current IDRM ma 10 Tj= 25C Gate Opened IDRM ma 150 = [25C Gate Opened Peak Reverse Current IRRM ma 10 Tj= 25C Gate Opened IRRM ma {50 = 125C Gate Opened Critical exponential rate of rise dv/dt Vi/us 500 Tj = 125C, Vp = 0.8VpRM of off-state voltage (higher rates open gate may cause destructive switching). Delay Time ta us 1.5 2.5 3.0 Tj = 125C, Vp = 1800V Gate Trigger Current Iot ma 250 T= 25C, Vp = 12V DC Gate Trigger Voltage Vot Vv 4.2 Non-Trigger Current 1GDM ma 15 Tj = 125C, Vip = 1300V Non-Trigger Voltage VGDM Vv 0.5 AC Crest Operational Gate IGA A vl Gate source: Current: Voltage requirement VGA Vv I3 + open circuit - 30V - short circuit - 2A - rise time * 0.5us - duration tp > td Conventional Circuit tq us 250 400 Tj = 125C, it = 2000 A Commutating Turn-off time tp > 2ms (with reverse voltage) dir/dt = SA/ys Vr= 100V dv/dt = [000V/ys V reapplied = 1S00V Holding Current Iq ma 40 70 200 Te 25C, difdt =~Sma/ys 24 42 120 105C, Erms = 7.5Vrms 20 35 100 125C, R= 10 ohms Freq = 60Hz Latching Current IL ma 300 600 1000 Tj 25C, Gate Drive 210 420 700 105C, 30V/10 ohms 190 375 630 125C, duration {Sus ON-STATE PEAK CURRENT If (KA} 8 6 &% = Qa 1 2 ON-STATE PEAK VOLTAGE, VTM (V) 3 4 5 MAXIMUM FORWARD CONDUCTION CHARACTERISTIC ON-STATE ITSM (KA) ts 2 TIME BASE WIDTH OF HALF SINEWAVE (me) 10 NON-REPETITIVE Irgqq and [?t CAPABILITY FOR FUSE COORDINATION 3.E6 1.66 Pt (AS)GE CO/ STATIC PWR CMPNT SUE D MM 3874584 0000118 3 MMGESP T-a5-24 CONDUCTION ANGLE, y CONDUCTION ANGLE, y 180 a ~~ wor 5 /\ } E dom 150 2 COND. 3 sooo Lt Oe eu 2 to & 1000 CYCLE 120 gf Z : 2000 8 vy & 2000 to uy 500 oe 2 * g 1090 . 500 1000 1500 2000 2500 3000 2000 3000 4000 $000 6000 7000 8000 REAK CURRENT, It (AMPERES) PEAK CURRENT, IT (AMPERES) SINEWAVE 60 Hz MAXIMUM FULL CYCLE AVERAGE POWER DISSIPATION FOR SINEWAVE CURRENT AT VARIOUS CONDUCTING ANGLES. EFFECT OF VARIABLE CONDUCTING AREA IS INCLUDED. (DIGITAL DATA ts AVAILABLE) OVERLAP ANGLE, 4 ; OVERLAP ANGLE, 4 * a ' ta =F 6 20 . z | : > i ph a c 11000 S20" TT g m2" i g CONDUCTION ANGLE e 4 CONDUCTION ANGLE & 60 Hz oO =120% +4 g < ; 60 He E z < 500 3 ; Z 8 3 , z 500 1000 1500 2000 2500 1 2 3 5 6 7 8 PEAK CURRENT, IT (AMPERES) PEAK CURRENT, It (KILOAMPERES) CONDUCTION) AT SEVERAL OVERLAP ANGLES, y*. EFFECT OF VARIABLE CONDUCTING AREA IS INCLUDED. (DIGITAL DATA {S AVAILABLE) so 2800 4m Fi a : gm 7 s \ggpen = > e ; wi 1500p i MAXIMUM 125C g oN 3 go Rs E 19 2 N 3 5 1000 _ Cs No MAXIMUM 25C B = aw re | fig = Vo > Vo N IAM 700 onM 3 . ax y . 1. 29 70 100 150 200 CIRCUIT COMMUTATING dipydt (A/uS) CIRCUIT COMMUTATING dig/dt, (A/uS) MAXIMUM ALLOWABLE REPET ITIVE DI/DT AS PEAK RECOVERY CURRENT VERSUS FUNCTION OF ANODE Wee Oo LIMITATION ON ADDITIONAL SNUBBER 6. DISCHARGE IS INDICATED.GE CO/ STATIC PWR CMPNT S4E D MM 3874584 0000119 5 MEGESP 725-2] C784 CHARACTERISTICS CHARACTERISTIC SYMBOL | UNITS | MIN. | TYPE MAX, TEST CONDITIONS Peak Off-state Current IDRM ma 20 Tj = 25C Gate Opened IpDRM ma 300 = 125C Gate Opened Peak Reverse Current. IRRM ma 20 Tj= 25C Gate Opened IRRM ma 200 = 125C Gate Opened Critical exponential rate of rise dvidt V/us 1000 Tj = 125C, Vp =0.7VpRM of off-state voltage (higher rates open gate may cause destructive switching). Delay Time td Bs 1.5 2.5 3.0 Tj = 125C, Vp = 2000V Gate Trigger Current IGT ma 300 Tj= 25C, Vp = 12V DC Gate Trigger Voltage* VGT Vv 4.5 Non-Trigger Current IGDM ma 18 Tj = 115C, Vp = 2000V Non-Trigger Voltage VGDM Vv 0.8 AC Crest Operational Gate IGA A 15 Gate source: Current; Voltage requirement VGA Vv 25 + open circuit - 40V + short circuit - 4A - rise time ~ 0.5ys ~ duration tp > td Conventional Circuit ty us 400 Ty = 100C, ty = 20008 Commutating Turn-off time tp > 2ms (with reverse voltage) dir/dt = SA/us Vr = 100V dv/dt = 1000V/us V reapplied = 2000V Holding Current ly ma 45 80 250 T= 25C, di/dt = ~5ma/pys 27 48 [50 105C, E=7.5Vrms 22 40 125 125C, R= 10 ohms Freq = 60Hz Latching Current Ip ma 300 450 1000 Tj = 25C Gate Drive 225 340 750 105C 30V/10 ohms 205 310 690 125C duration | Sus DC trigger current and voltage are indicated as a characteristic. Turn-on in this manner will not support rated di/dt, Te 126C ITSM (KA) ON-STATE PEAK CURRENT It (KA) 9 1 2 3 4 8 6 ? 8 9 ON-STATE PEAK VOLTAGE. VTw (VOLTS) 1 2 3 465 10 TIME BASE WIDTH OF HALF SINEWAVE (me) MAXIMUM FORWARD CONDUCTION NON-REPETITIVE tygqq and I?t CAPABILITY CHARACTERISTIC ON-STATE FOR FUSE COORDINATION Pt (ASEC)GE CO/ STATIC PUR CNPNT 346 D mm 3874584 0000320 1 MIGESP 7-36-2) CONDUCTION ANGLE, y CONDUCTION ANGLE, 1500 180 6 Y 60/50 Hz a _~ mom 160 = 150* a . ee 2 / z COND . 150 > . 120 z anae t> & 1000 4 CYCLE 120 8 w 5 3 w 3 so = 60 < Z g co uy sog a0 < 2 30 3 3 S b q 1 2 z bh 0 500 1000 1500 2000 2500 2 3 4 5 6 PEAK CURRENT, IT (AMPERES) PEAK CURRENT, Ip (KILOAMPERES) MAXIMUM FULL CYCLE AVERAGE POWER DISSIPATION FOR SINEWAVE CURRENT AT VARIOUS CONDUCTING ANGLES. EFFECT OF VARIABLE CONDUCTING AREA IS INCLUDED. , (DIGITAL DATA tS AVAILABLE) OVERLAP ANGLE, : OVERLAP ANGLE. z 20 It age 7 20 a to, 6 a -_* 1209 anny 120 + CONDUCTION ANGLE 2129% u 60 Hz CONDUCTION ANGLE 2120 +p 60 Hz FULL CYCLE AVERAGE POWER. Pay (WATTS} FULL CYCLE AVERAGE POWER, Pay (KW) > 500 1000 1800 2000 2 3 4 5 6 PEAK CURRENT IT (AMPERES) PEAK CURRENT It (KILOAMPERES) MAXIMUM FULL CYCLE AVERAGE POWER DISSIPATION FOR THREE PHASE RECTIFIER (120 CONDUCTION) AT SEVERAL OVERLAP ANGLES, 1. EFFECT OF VARIABLE CONDUCTING AREA IS INCLUDED. (DIGITAL DATA IS AVAILABLE) 4000 3 | ciRCUIT = di/dt MAXIMUM SWITCHING VOLTAGE, Vp, (VOLTS) PEAK RECOVERY CURRENT. inyy (AMPERES) IT > BOOOA, ton > 2m sec oR KN at t - MAXIMUM 25C f IRM wen 1000 Jl 1. 10. 2. 70 200 CIRCUIT COMMUTATING diR/dt (A/uS) . CIRCUIT COMMUTATING dip/at, (A/S) PEAK RECOVERY CURRENT VERSUS MA TUNCTION OF ANGEGTn Orage elas. AS COMMUTATING CIRCUIT DI/DT LIMITATION ON ADDITIONAL SNUBBER DISCHARGE IS INDICATED, GE CO/ STATIC PWR CNPNT 34E D MM 3874584 0000121 3 MEGESP 7.35-a) - 8 -= GATE CHARACTERISTICS AND GATE SUPPLY REQUIREMENTS 0 Thyristor Gate Impedance This is enhanced by fast rising gate voltage, increasing anode bias and 3 temperature. iw ft is at a minimum for de voltage, zero bias and low temperature (not 33 Zot shown) ws IN f XN The maximum impedances expected for C784 and C781/C782 are <5 wa indicated as curves of gate current versus gate voltage. Su \ Lene Gate Supply 85 2 Load lines for 40V/10M and 30V/15M are shown. The short circuit as Le current tise time should be approximately 0.Sus and the duration longer < 8 at than the delay time expected for the thyristor. <> ra \ rave Minimum Acceptable Gate Current 3 E 10 ra 7 The intersection of load line and gate characteristic (encircled) indicates a Nv the minimum value of actual current flowing into the gate that is required & during the delay time interval needed for the published di/dt and snubber 9 discharge ratings. - 0 1 2 3 4 ~ Additional Gate Ratings (maximums) INSTANTANEOUS CURRENT {A} Peak gate power, PGny (100uS) oc. csc esaseececens paceee ee ee cSOW GATE SUPPLY IGS OR THYRISTOR GATE IGk Average gate power, PO(AY).-cssesssresceoes ddeveee peveeee 35W ~ Peak gate current..... eeeeae veeeenee de neeecccceens teeeae + 2A Peak reverse voltage VGRM scesscssccsceecce Oo eteaneeneees 20V THERMAL AND MECHANICAL INFORMATION NOTES: 1. Add .002C/W to account for both case to dissipator interfaces when properly mounted; .g., Regs = .014C/W. See Mounting Instructions, 2. DC Thermal Impedance is based on average full cycle junction temperature. Instantaneous junction temperature may be calculated using the following modifications: end of conducting portion of cycle 120 sq. wave add .0012C/W along entire curve 180 sq. wave add .0010C/ W along entire curve ~ 180 sine save add .0005C/ W along entire curve Zesc-pc "Cy e end of full cycle any wave, subtract .0005C/ W along entire curve. on Of ' rs 10. 3. Ask for general mounting instructions. POWER ON TIME (SEC) . OUTLINE DRAWING TIME . SECONOS . t inches Miltimetare Symbol Min. Max. Min. Max. oA _ 4.350 - 110.49 $B 2.876 2.880 73.05 73.15 Cc (.387 [467 35.23 36.75 *** for C785 only *** "C" = 1.000 - 1.070 in. Dj 080 |_| 203 | = 25.40 - 27.18 ge [ois | or | 345 | 3.71) | taco cree - es LO0in F 020 | 086 | ee a wnt. G |2403 | 2418 | 61.16 | 61.42 M oe PLATED #7" 8- otoeom ofeel) oH = - = -_J* SURFACE 4. Anode-Cathode Pole Faces @ Nickel Plated Copper. . $. Mounting Force, 7000 - 9000 Ib / 31,1 - 40.0 kN 6. Electrical Insulation, Glazed Ceramic, Creepage 1.6 in. (40.6mm), Strike 1.0 in. (25.4mm) 7, Gate Leads @ @ 18 in. #22 Terminated Nickel Plated. with 48 Ring Terminal. Static Power Component Operation = &B 205 Great Valley Parkway . Malvern, PA 19355 USA (215) 251-7384 /7377 -