Order this document by BC556/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 Symbol BC 556 BC 557 BC 558 Unit Collector - Emitter Voltage VCEO -65 -45 -30 Vdc Collector - Base Voltage VCBO -80 -50 -30 Vdc Emitter - Base Voltage VEBO -5.0 Vdc Collector Current -- Continuous IC -100 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watt mW/C TJ, Tstg - 55 to +150 C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W Rating Operating and Storage Junction Temperature Range 3 CASE 29-04, STYLE 17 TO-92 (TO-226AA) THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Typ Max -65 -45 -30 -- -- -- -- -- -- -80 -50 -30 -- -- -- -- -- -- -5.0 -5.0 -5.0 -- -- -- -- -- -- -- -- -- -- -- -- -2.0 -2.0 -2.0 -- -- -- -100 -100 -100 -4.0 -4.0 -4.0 Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = -2.0 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = -100 Adc) Emitter - Base Breakdown Voltage (IE = -100 mAdc, IC = 0) Collector-Emitter Leakage Current (VCES = -40 V) (VCES = -20 V) (VCES = -20 V, TA = 125C) V(BR)CEO BC556 BC557 BC558 V V(BR)CBO BC556 BC557 BC558 V V(BR)EBO BC556 BC557 BC558 V ICES BC556 BC557 BC558 BC556 BC557 BC558 Motorola Small-Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 nA A 1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Typ Max -- -- -- 120 120 120 120 180 420 -- -- -- 90 150 270 -- -- -- 170 290 500 120 180 300 -- -- -- 500 800 800 220 460 800 -- -- -- -- -- -- -0.075 -0.3 -0.25 -0.3 -0.6 -0.65 -- -- -0.7 -1.0 -- -- -0.55 -- -0.62 -0.7 -0.7 -0.82 -- -- -- 280 320 360 -- -- -- -- 3.0 6.0 -- -- -- 2.0 2.0 2.0 10 10 10 125 125 125 240 450 -- -- 220 330 600 500 900 260 500 900 Unit ON CHARACTERISTICS DC Current Gain (IC = -10 Adc, VCE = -5.0 V) (IC = -2.0 mAdc, VCE = -5.0 V) (IC = -100 mAdc, VCE = -5.0 V) hFE BC557A BC556B/557B/558B BC557C BC556 BC557 BC558 BC557A BC556B/557B/558B BC557C BC557A BC556B/557B/558B BC557C Collector - Emitter Saturation Voltage (IC = -10 mAdc, IB = -0.5 mAdc) (IC = -10 mAdc, IB = see Note 1) (IC = -100 mAdc, IB = -5.0 mAdc) VCE(sat) Base - Emitter Saturation Voltage (IC = -10 mAdc, IB = -0.5 mAdc) (IC = -100 mAdc, IB = -5.0 mAdc) VBE(sat) Base-Emitter On Voltage (IC = -2.0 mAdc, VCE = -5.0 Vdc) (IC = -10 mAdc, VCE = -5.0 Vdc) VBE(on) -- V V V SMALL-SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product (IC = -10 mA, VCE = -5.0 V, f = 100 MHz) fT BC556 BC557 BC558 Output Capacitance (VCB = -10 V, IC = 0, f = 1.0 MHz) Noise Figure (IC = -0.2 mAdc, VCE = -5.0 V, RS = 2.0 kW, f = 1.0 kHz, f = 200 Hz) Small-Signal Current Gain (IC = -2.0 mAdc, VCE = -5.0 V, f = 1.0 kHz) Cob MHz NF BC556 BC557 BC558 dB hfe BC556 BC557/558 BC557A BC556B/557B/558B BC557C pF -- Note 1: IC = -10 mAdc on the constant base current characteristics, which yields the point IC = -11 mAdc, VCE = -1.0 V. 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data BC557/BC558 1.5 -1.0 TA = 25C -0.9 VCE = -10 V TA = 25C VBE(sat) @ IC/IB = 10 -0.8 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 1.0 0.7 0.5 -0.7 VBE(on) @ VCE = -10 V -0.6 -0.5 -0.4 -0.3 -0.2 0.3 VCE(sat) @ IC/IB = 10 -0.1 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 IC, COLLECTOR CURRENT (mAdc) 0 -0.1 -0.2 -100 -200 Figure 1. Normalized DC Current Gain -1.2 IC = -10 mA IC = -50 mA IC = -200 mA IC = -100 mA IC = -20 mA -0.4 -0.02 VB , TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (V) TA = 25C -55C to +125C 1.2 1.6 2.0 2.4 2.8 -10 -20 -0.1 -1.0 IB, BASE CURRENT (mA) -0.2 10 Cib 7.0 TA = 25C 5.0 Cob 3.0 2.0 1.0 -0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 -10 -1.0 IC, COLLECTOR CURRENT (mA) -100 Figure 4. Base-Emitter Temperature Coefficient f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) Figure 3. Collector Saturation Region C, CAPACITANCE (pF) -100 1.0 -1.6 0 -50 Figure 2. "Saturation" and "On" Voltages -2.0 -0.8 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) 400 300 200 150 VCE = -10 V TA = 25C 100 80 60 40 30 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 5. Capacitances Figure 6. Current-Gain - Bandwidth Product Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 BC556 TJ = 25C VCE = -5.0 V TA = 25C -0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) -1.0 2.0 1.0 0.5 VBE(sat) @ IC/IB = 10 -0.6 VBE @ VCE = -5.0 V -0.4 -0.2 0.2 VCE(sat) @ IC/IB = 10 0 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (AMP) -0.1 -0.2 -0.5 -50 -100 -200 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) Figure 8. "On" Voltage -2.0 -1.0 VB, TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain -1.6 -1.2 IC = -10 mA -20 mA -50 mA -100 mA -200 mA -0.8 -0.4 TJ = 25C 0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 IB, BASE CURRENT (mA) -5.0 -10 -20 -1.4 -1.8 -2.6 -3.0 -0.2 f T, CURRENT-GAIN - BANDWIDTH PRODUCT C, CAPACITANCE (pF) TJ = 25C Cib 10 8.0 Cob 4.0 2.0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) Figure 11. Capacitance 4 -0.5 -1.0 -50 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) -100 -200 Figure 10. Base-Emitter Temperature Coefficient 40 6.0 -55C to 125C -2.2 Figure 9. Collector Saturation Region 20 VB for VBE -50 -100 500 VCE = -5.0 V 200 100 50 20 -100 -1.0 -10 IC, COLLECTOR CURRENT (mA) Figure 12. Current-Gain - Bandwidth Product Motorola Small-Signal Transistors, FETs and Diodes Device Data r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 0.05 SINGLE PULSE 0.1 0.07 0.05 SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 0.03 0.02 0.01 0.1 ZJC(t) = (t) RJC RJC = 83.3C/W MAX ZJA(t) = r(t) RJA RJA = 200C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) P(pk) 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0 k 2.0 k 5.0 k 10 k Figure 13. Thermal Response -200 IC, COLLECTOR CURRENT (mA) 1s 3 ms -100 TA = 25C -50 TJ = 25C BC558 BC557 BC556 -10 -5.0 -2.0 -1.0 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT The safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. -5.0 -10 -30 -45 -65 -100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 14. Active Region -- Safe Operating Area Motorola Small-Signal Transistors, FETs and Diodes Device Data 5 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X-X N N CASE 029-04 (TO-226AA) ISSUE AD DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER Motorola reserves the right to make changes without further notice to any products herein. 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