1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating Symbol BC
556 BC
557 BC
558 Unit
Collector–Emitter Voltage VCEO –65 –45 –30 Vdc
Collector–Base Voltage VCBO –80 –50 –30 Vdc
Emitter–Base Voltage VEBO –5.0 Vdc
Collector Current — Continuous IC–100 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD625
5.0 mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD1.5
12 Watt
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
q
JA 200 °C/W
Thermal Resistance, Junction to Case R
q
JC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –2.0 mAdc, IB = 0) BC556
BC557
BC558
V(BR)CEO –65
–45
–30
—
—
—
—
—
—
V
Collector–Base Breakdown Voltage
(IC = –100 µAdc) BC556
BC557
BC558
V(BR)CBO –80
–50
–30
—
—
—
—
—
—
V
Emitter–Base Breakdown Voltage
(IE = –100
m
Adc, IC = 0) BC556
BC557
BC558
V(BR)EBO –5.0
–5.0
–5.0
—
—
—
—
—
—
V
Collector–Emitter Leakage Current
(VCES = –40 V) BC556
(VCES = –20 V) BC557
BC558
(VCES = –20 V, TA = 125°C) BC556
BC557
BC558
ICES —
—
—
—
—
—
–2.0
–2.0
–2.0
—
—
—
–100
–100
–100
–4.0
–4.0
–4.0
nA
µA
Order this document
by BC556/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
123
Motorola, Inc. 1996
COLLECTOR
1
2
BASE
3
EMITTER
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –10 µAdc, VCE = –5.0 V) BC557A
BC556B/557B/558B
BC557C
(IC = –2.0 mAdc, VCE = –5.0 V) BC556
BC557
BC558
BC557A
BC556B/557B/558B
BC557C
(IC = –100 mAdc, VCE = –5.0 V) BC557A
BC556B/557B/558B
BC557C
hFE —
—
—
120
120
120
120
180
420
—
—
—
90
150
270
—
—
—
170
290
500
120
180
300
—
—
—
500
800
800
220
460
800
—
—
—
—
Collector–Emitter Saturation V oltage
(IC = –10 mAdc, IB = –0.5 mAdc)
(IC = –10 mAdc, IB = see Note 1)
(IC = –100 mAdc, IB = –5.0 mAdc)
VCE(sat) —
—
—
–0.075
–0.3
–0.25
–0.3
–0.6
–0.65
V
Base–Emitter Saturation V oltage
(IC = –10 mAdc, IB = –0.5 mAdc)
(IC = –100 mAdc, IB = –5.0 mAdc)
VBE(sat) —
—–0.7
–1.0 —
—
V
Base–Emitter On Voltage
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
(IC = –10 mAdc, VCE = –5.0 Vdc)
VBE(on) –0.55
—–0.62
–0.7 –0.7
–0.82
V
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –10 mA, VCE = –5.0 V, f = 100 MHz) BC556
BC557
BC558
fT—
—
—
280
320
360
—
—
—
MHz
Output Capacitance
(VCB = –10 V, IC = 0, f = 1.0 MHz) Cob —3.0 6.0 pF
Noise Figure
(IC = –0.2 mAdc, VCE = –5.0 V, BC556
RS = 2.0 k
W
, f = 1.0 kHz, ∆f = 200 Hz) BC557
BC558
NF —
—
—
2.0
2.0
2.0
10
10
10
dB
Small–Signal Current Gain
(IC = –2.0 mAdc, VCE = –5.0 V, f = 1.0 kHz) BC556
BC557/558
BC557A
BC556B/557B/558B
BC557C
hfe 125
125
125
240
450
—
—
220
330
600
500
900
260
500
900
—
Note 1: IC = –10 mAdc on the constant base current characteristics, which yields the point IC = –11 mAdc, VCE = –1.0 V.
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
BC557/BC558
Figure 1. Normalized DC Current Gain
IC, COLLECTOR CURRENT (mAdc)
2.0
Figure 2. “Saturation” and “On” Voltages
IC, COLLECTOR CURRENT (mAdc)
–0.2
0.2
Figure 3. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
–0.6
–0.7
–0.8
–0.9
–1.0
–0.5
0
–0.2
–0.4
–0.1
–0.3
1.6
1.2
2.0
2.8
2.4
–1.2
–1.6
–2.0
–0.02 –1.0 –10
0–20
–0.1
–0.4
–0.8
hFE, NORMALIZED DC CURRENT GAIN
V, VOLTAGE (VOLTS)
VCE, COLLECTOR–EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)
°θ
1.5
1.0
0.7
0.5
0.3
–0.2 –10 –100
–1.0
TA = 25
°
CVBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = –10 V
VCE = –10 V
TA = 25
°
C
–55
°
C to +125
°
C
IC = –100 mA
IC = –20 mA
–0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100
IC = –200 mAIC = –50 mAIC =
–10 mA
Figure 5. Capacitances
VR, REVERSE VOLTAGE (VOL TS)
10
Figure 6. Current–Gain – Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
–0.4
1.0
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
–0.5
C, CAPACITANCE (pF)
f , CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)
T
TA = 25
°
C
Cob
Cib
–0.6 –1.0 –2.0 –4.0 –6.0 –10 –20 –30 –40
150
–1.0 –2.0 –3.0 –5.0 –10 –20 –30 –50
VCE = –10 V
TA = 25
°
C
TA = 25
°
C
1.0
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
BC556
Figure 7. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
Figure 8. “On” Voltage
IC, COLLECTOR CURRENT (mA)
–0.8
–1.0
–0.6
–0.2
–0.4
1.0
2.0
–0.1 –1.0 –10 –200
–0.2
0.2
0.5
–0.2 –1.0 –10 –200
TJ = 25
°
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = –5.0 V
Figure 9. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
–1.0
–1.2
–1.6
–2.0
–0.02 –1.0 –10
0–20
–0.1
–0.4
–0.8
VCE, COLLECTOR–EMITTER VOLTAGE (VOL TS)
VB, TEMPERA TURE COEFFICIENT (mV/ C)
°θ
–0.2 –2.0 –10 –200
–1.0
TJ = 25
°
C
IC =
–10 mA
hFE, DC CURRENT GAIN (NORMALIZED)
V, VOLTAGE (VOLTS)
VCE = –5.0 V
TA = 25
°
C
0–0.5 –2.0 –5.0 –20 –50 –100
–0.05 –0.2 –0.5 –2.0 –5.0
–100 mA
–20 mA
–1.4
–1.8
–2.2
–2.6
–3.0 –0.5 –5.0 –20 –50 –100
–55
°
C to 125
°
C
θ
VB for VBE
–2.0 –5.0 –20 –50 –100
Figure 11. Capacitance
VR, REVERSE VOLTAGE (VOL TS)
40
Figure 12. Current–Gain – Bandwidth Product
IC, COLLECTOR CURRENT (mA)
–0.1 –0.2 –1.0 –50
2.0 –2.0 –10 –100
100
200
500
50
20
20
10
6.0
4.0
–1.0 –10 –100
VCE = –5.0 V
C, CAPACITANCE (pF)
f , CURRENT–GAIN – BANDWIDTH PRODUCT
T
–0.5 –5.0 –20
TJ = 25
°
C
Cob
Cib
8.0
–50 mA –200 mA
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 13. Thermal Response
t, TIME (ms)
1.0
r(t), TRANSIENT THERMAL
2.0 5.01.00.50.20.1
RESIST ANCE (NORMALIZED)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01 20 5010 200 500100 1.0 k 2.0 k 5.0 k 10 k
Figure 14. Active Region — Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (V)
–200
–1.0
IC, COLLECTOR CURRENT (mA)
TA = 25
°
C
D = 0.5
0.2
0.1 0.05 SINGLE PULSE
SINGLE PULSE
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
3 ms
TJ = 25
°
C
Z
θ
JC(t) = (t) R
θ
JC
R
θ
JC = 83.3
°
C/W MAX
Z
θ
JA(t) = r(t) R
θ
JA
R
θ
JA = 200
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
t1t2
P(pk)
DUTY CYCLE, D = t1/t2
–100
–50
–10
–5.0
–2.0 –5.0 –10 –30 –45 –65 –100
1 s
BC558
BC557
BC556
The safe operating area curves indicate IC–VCE limits of the
transistor that must be observed for reliable operation. Collector load
lines for specific circuits must fall below the limits indicated by the
applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is
variable depending upon conditions. Pulse curves are valid for duty
cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from
the data in Figure 13. At high case or ambient temperatures, thermal
limitations will reduce the power than can be handled to values less
than the limitations imposed by second breakdown.
6 Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
HSECTION X–X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.022 0.41 0.55
F0.016 0.019 0.41 0.48
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
N0.080 0.105 2.04 2.66
P––– 0.100 ––– 2.54
R0.115 ––– 2.93 –––
V0.135 ––– 3.43 –––
1
CASE 029–04
(TO–226AA)
ISSUE AD
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
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