BTA08 BW/CW
BTB08 BW/CW
March 1995
SNUBBERLESS TRIACS
Symbol Parameter Value Unit
IT(RMS) RMS on-state current
(360°conduction angle) BTA Tc = 90 °C8 A
BTB Tc = 95 °C
ITSM Non repetitive surge peak on-state current
( Tj initial = 25°C) tp = 8.3 ms 85 A
tp = 10 ms 80
I2tI
2
t value tp = 10 ms 32 A2s
dI/dt Critical rate of rise of on-state current
Gate supply : IG= 500mA diG/dt = 1A/µsRepetitive
F = 50 Hz 20 A/µs
Non
Repetitive 100
Tstg
Tj Storage and operating junction temperature range - 40 to + 150
- 40 to + 125 °C
°C
Tl Maximum lead temperature for soldering during 10 s at 4.5 mm
from case 260 °C
TO220AB
(Plastic)
A1
A2 G
.HIGH COMMUTATION : (dI/dt)c>7A/ms
withoutsnubber
.HIGH SURGE CURRENT : ITSM =80A
.V
DRM UP TO 800V
.BTAFamily :
INSULATINGVOLTAGE= 2500V(RMS)
(ULRECOGNIZED : E81734)
DESCRIPTION
Symbol Parameter BTA / BTB08-... BW/CW Unit
400 600 700 800
VDRM
VRRM Repetitive peak off-state voltage
Tj = 125 °C400 600 700 800 V
ABSOLUTE RATINGS (limiting values)
FEATURES
The BTA/BTB08 BW/CW triac family are high per-
formance glass passivated chips technology.
The SNUBBERLESSconcept offer suppression
of RC network and it is suitable for application
such as phase control and static switching on in-
ductive or resistive load.
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GATECHARACTERISTICS (maximum values)
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 60 °C/W
Rth (j-c) DC Junction to case for DC BTA 4.4 °C/W
BTB 3.3
Rth (j-c) AC Junction to case for 360°conduction angle
( F= 50 Hz) BTA 3.3 °C/W
BTB 2.5
Symbol Test Conditions Quadrant Suffix Unit
BW CW
IGT VD=12V (DC) RL=33ΩTj=25°C I-II-III MIN 2 1 mA
MAX 50 35
VGT VD=12V (DC) RL=33ΩTj=25°C I-II-III MAX 1.5 V
VGD VD=VDRM RL=3.3kΩTj=125°C I-II-III MIN 0.2 V
tgt VD=VDRM IG= 500mA
dIG/dt = 3A/µsTj=25°C I-II-III TYP 2 µs
ILIG=1.2 IGT Tj=25°C I-III TYP 40 - mA
II TYP 80 -
I-III MAX - 50
II MAX - 80
IH*I
T
= 500mA gate open Tj=25°C MAX 50 35 mA
VTM *I
TM= 11A tp= 380µs Tj=25°C MAX 1.75 V
IDRM
IRRM VDRM Rated
VRRM Rated Tj=25°C MAX 0.01 mA
Tj=125°C MAX 2
dV/dt * Linear slope up to VD=67%VDRM
gate open Tj=125°C MIN 500 250 V/µs
TYP 750 500
(dI/dt)c * Without snubber Tj=125°C MIN 7 4.5 A/ms
TYP 14 9
* For either polarity of electrode A2voltage with reference to electrode A1.
PG (AV) =1W P
GM = 10W (tp = 20 µs) IGM =4A(tp=20µs) VGM = 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
BTA08 BW/CW / BTB08 BW/CW
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ORDERING INFORMATION
Package IT(RMS) VDRM /V
RRM Sensitivity Specification
A V BW CW
BTA
(Insulated) 8 400 X X
600 X X
700 X X
800 X X
BTB
(Uninsulated) 400 X X
600 X X
700 X X
800 X X
Fig.1 : Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(Curves are cut off by (dI/dt)c limitation)
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact (BTA).
Fig.3 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact (BTB).
Fig.4 : RMS on-state current versus case temperature.
BTA08 BW/CW / BTB08 BW/CW
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1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
0.01
0.1
1Zth/Rth
Zth(j-c)
Zth(j-a)
tp(s)
Fig.5 : Relative variation of hermal impedance versus
pulse duration. Fig.6 : Relative variation of gate trigger current and
holding current versus junction temperature.
Fig.7 : Non Repetitive surge peak on-state current
versus number of cycles. Fig.8 : Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t ≤ 10ms, and
corresponding value of I2t.
Fig.9 : On-state characteristics (maximum values).
BTA08 BW/CW / BTB08 BW/CW
4/5
PACKAGE MECHANICAL DATA
TO220AB Plastic
Cooling method : C
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
I
==
AG
D
B
C
F
P
N
O
M
L
J
H
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A10.20 10.50 0.401 0.413
B14.23 15.87 0.560 0.625
C12.70 14.70 0.500 0.579
D5.85 6.85 0.230 0.270
F4.50 0.178
G2.54 3.00 0.100 0.119
H4.48 4.82 0.176 0.190
I3.55 4.00 0.140 0.158
J1.15 1.39 0.045 0.055
L0.35 0.65 0.013 0.026
M2.10 2.70 0.082 0.107
N4.58 5.58 0.18 0.22
O0.80 1.20 0.031 0.048
P0.64 0.96 0.025 0.038
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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BTA08 BW/CW / BTB08 BW/CW
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