HMC770LP4BE v02.1111 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz Typical Applications Features The HMC770LP4BE is ideal for: High Output IP3: +40 dBm * Cellular / PCS / 3G Single Positive Supply: +5V * Fixed Wireless & WLAN Low Noise Figure: 2.5 dB [1] * CATV, Cable Modem & DBS Differential RF I/O's * Microwave Radio & Test Equipment 20 Lead 4x4 mm SMT Package: 16mm TE * IF & RF Applications General Description 6-1 B SO LE The HMC770LP4BE is a GaAs pHEMT Differential Gain Block MMIC amplifier covering 40 MHz to 1 GHz and packaged in a 4x4 mm plastic QFN SMT package. This versatile amplifier can be used as a cascadable IF or RF gain stage in both 50 Ohm and 75 Ohm applications. The HMC770LP4BE delivers 16 dB gain, and +40 dBm output, with only 2.5 dB noise figure. Differential I/Os make this amplifier ideal for transimpedance and SAW filter applications, and in transceivers where the IF path must be handled differentially for improved noise performance. Evaluation PCBs are all available with either SMA (50) or Type F (75) connectors. Electrical Specifications, TA = +25 C, Vdd = Vdd1 = Vdd2 = +5V, Rbias = R1 = 200 [2] Parameter Min. Gain [2] Typ. Max. Min. Zo = 50 Ohms Frequency Range O Amplifiers - Driver & Gain Block - SMT Functional Diagram Gain Variation Over Temperature Max. Zo =75 Ohms 0.04 - 1 12 Typ. 16.5 12 Units 0.04 - 1 GHz 16 dB 0.006 0.008 dB / C Input Return Loss 17 15 dB Output Return Loss 18 15 dB 23.5 dBm 37.5 dBm Output Power for 1 dB Compression (P1dB) 20 23 Output Third Order Intercept (IP3) (Pout = 0 dBm per tone, 1 MHz spacing) 40 Noise Figure [2] 2.5 Transimpedance Input Referred Current Noise [3] 21 4 - 2.75 4 700 - dB Ohms 6 pA / Hz Supply Current 1 (Idd1) 136 160 136 160 mA Supply Current 2 (Idd2) 134 160 134 160 mA [1] 1:1 Balun losses have NOT been removed from measurements. See list of materials for eval PCB for the type of balun. [2] See application circuit [3] Includes balun loss, no photo diode. See list of materials for eval PCB for the type of balun. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2delivery, and to place Chelmsford, orders: Analog MA Devices, Inc., For price,is delivery and Devices to place orders: Hittite Microwave Elizabeth Drive, 01824 responsibility assumed by Analog for its use, nor for any infringements of patents or Corporation, other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 978-250-3373 fax Devices. * Order On-line at www.hittite.com Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any*patent or patent rights of Analog Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: pll@hittite.com HMC770LP4BE v02.1111 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz 50 Ohm Data Gain & Return Loss [1] Gain vs. Temperature [1] 20 20 15 0 GAIN (dB) S21 S11 S22 5 -20 0 0 0.2 0.4 0.6 0.8 1 Gain vs. Vdd [1] B SO GAIN (dB) 0.8 1 0.8 1 15 4.5V 5.0V 5.5V 10 5 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 O 0 0 0.4 0.6 FREQUENCY (GHz) 0 +25C +85C -40C -5 S22 RETURN LOSS (dB) -10 0.2 Return Loss vs. Vdd [1] 0 -5 Rbias = 1.5k Ohms Rbias = 600 Ohms Rbias = 200 Ohms 10 5 1 Return Loss vs. Temperature [1] RETURN LOSS (dB) 0.4 0.6 FREQUENCY (GHz) 20 15 -15 -20 S11 -25 -30 0.2 Gain vs. Rbias 20 0 0 LE FREQUENCY (GHz) plls - SMT -30 +25C +85C -40C 10 TE -10 GAIN (dB) RESPONSE (dB) 10 4.5V 5.0V 5.5V -10 S22 -15 S11 -20 -25 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 -30 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 [1] Rbias=R1=200 Ohms. See application circuit Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2delivery, and Drive, to placeChelmsford, orders: Analog MA Devices, Inc., For price,is delivery and Devices to place orders: Hittite Microwave Elizabeth 01824 responsibility assumed by Analog for its use, nor for any infringements of patents orCorporation, other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 978-250-3373 fax Devices. * Order On-line at www.hittite.com Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any* patent or patent rights of Analog Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of theirApplication respective owners. Support: pll@hittite.com 6-2 HMC770LP4BE v02.1111 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz 50 Ohm Data Return Loss vs. Rbias Isolation vs. Rbias 0 0 Rbias = 1.5k Ohms Rbias = 600 Ohms Rbias = 200 Ohms -5 ISOLATION (dB) S22 -10 -20 S11 -25 Rbias = 1.5k Ohms Rbias = 600 Ohms Rbias = 200 Ohms -15 -20 -25 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 -30 1 0 0.2 0.4 0.6 FREQUENCY (GHz) LE 0 1 8 8 +25C +85C -40C 4 2 0 B SO 6 0 0.2 0.4 0.6 0.8 4 2 0 0 1 O Noise Figure vs. Vdd [1] 25 50 75 100 125 150 175 200 FREQUENCY (MHz) Noise Figure vs. Vdd for Low Frequencies [1][2] 8 8 4.5V 5.0V 5.5V NOISE FIGURE (dB) 6 +25C +85C -40C 6 FREQUENCY (GHz) NOISE FIGURE (dB) 0.8 Noise Figure vs. Temperature for Low Frequencies [1][2] Noise Figure vs. Temperature [1] NOISE FIGURE (dB) PLLs - SMT -30 -10 TE -15 NOISE FIGURE (dB) RETURN LOSS (dB) -5 4 2 0 4.5V 5.0V 5.5V 6 4 2 0 0 0.2 0.4 0.6 0.8 1 FREQUENCY (GHz) 0 25 50 75 100 125 150 175 200 FREQUENCY (MHz) [1] Rbias=R1=200 Ohms. See application circuit. [2] See application circuit for the tune for low frequencies. 6-3 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2delivery, and to place Chelmsford, orders: Analog MA Devices, Inc., For price,is delivery and Devices to place orders: Hittite Microwave Elizabeth Drive, 01824 responsibility assumed by Analog for its use, nor for any infringements of patents or Corporation, other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 978-250-3373 fax Devices. * Order On-line at www.hittite.com Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any*patent or patent rights of Analog Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their Application respective owners. Support: pll@hittite.com HMC770LP4BE v02.1111 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz 50 Ohm Data Noise Figure vs. Rbias for Low Frequencies [2] Noise Figure vs. Rbias 8 NOISE FIGURE (dB) Rbias = 1.5k Ohms Rbias = 600 Ohms Rbias = 200 Ohms 6 2 0 2 0.4 0.6 0.8 1 0 25 50 75 100 125 150 175 200 LE FREQUENCY (MHz) P1dB vs. Temperature [1] plls - SMT 0.2 FREQUENCY (GHz) P1dB vs. Vdd [1] 30 30 25 25 20 15 B SO P1dB (dBm) 4 0 0 +25C +85C -40C 10 5 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 20 4.5V 5.0V 5.5V 15 10 5 0 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 P1dB vs. Rbias [1] O 0 Rbias=1.5k Ohms Rbias=600 Ohms Rbias=200 Ohms 6 TE 4 P1dB (dBm) NOISE FIGURE (dB) 8 30 P1dB (dBm) 25 20 15 Rbias = 1.5k Ohms Rbias = 600 Ohms Rbias = 200 Ohms 10 5 0 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 [1] Rbias=R1=200 Ohms. See application circuit. [2] See application circuit for the tune for low frequencies. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2delivery, and Drive, to placeChelmsford, orders: Analog MA Devices, Inc., For price,is delivery and Devices to place orders: Hittite Microwave Elizabeth 01824 responsibility assumed by Analog for its use, nor for any infringements of patents orCorporation, other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 978-250-3373 fax Devices. * Order On-line at www.hittite.com Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any* patent or patent rights of Analog Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of theirApplication respective owners. Support: pll@hittite.com 6-4 HMC770LP4BE v02.1111 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz 50 Ohm Data 50 50 45 45 40 40 35 0 0.2 0.4 0.6 FREQUENCY (GHz) 25 0.8 20 1 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 LE 20 4.5V 5.0V 5.5V 30 +25C +85C -40C 25 35 TE 30 400 50 350 45 4.5 V 5.0 V 5.5 V 35 30 B SO 40 Rbias = 1.5k Ohms Rbias = 600 Ohms Rbias = 200 Ohms 25 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 250 200 150 100 50 0 0 200 400 600 800 1000 1200 1400 1600 Rbias (Ohm) O 0 Idd (mA) 300 20 1 Idd vs. Rbias Output IP3 vs. Rbias IP3 (dBm) PLLs - SMT Output IP3 vs. Vdd [1] IP3 (dBm) IP3 (dBm) Output IP3 vs. Temperature [1] [1] Rbias=R1=200 Ohms. See application circuit 6-5 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2delivery, and to place Chelmsford, orders: Analog MA Devices, Inc., For price,is delivery and Devices to place orders: Hittite Microwave Elizabeth Drive, 01824 responsibility assumed by Analog for its use, nor for any infringements of patents or Corporation, other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 978-250-3373 fax Devices. * Order On-line at www.hittite.com Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any*patent or patent rights of Analog Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their Application respective owners. Support: pll@hittite.com HMC770LP4BE v02.1111 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz 75 Ohm Data Gain & Return Loss [1] Gain vs. Temperature [1] 20 20 15 GAIN (dB) S21 S11 S22 0 5 -20 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 Gain vs. Vdd [1] 10 4.5V 5.0V 5.5V 5 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 0.8 1 0.8 1 O 0 0.2 +25C +85C -40C 0.8 1 4.5V 5.0V 5.5V RETURN LOSS (dB) -5 -15 S11 -25 -10 -15 S11 -20 -25 S22 S22 0 0.2 0.4 0.4 0.6 FREQUENCY (GHz) 0 -10 -20 0 Return Loss vs. Vdd [1] 0 -5 Rbias = 1.5k Ohms Rbias = 600 Ohms Rbias = 200 Ohms 10 5 1 Return Loss vs. Temperature [1] -30 0.4 0.6 FREQUENCY (GHz) 15 B SO GAIN (dB) 0.2 20 15 RETURN LOSS (dB) 0 Gain vs. Rbias 20 0 0 1 plls - SMT 0 LE -30 +25C +85C -40C 10 TE -10 GAIN (dB) RESPONSE (dB) 10 0.6 0.8 FREQUENCY (GHz) 1 -30 0 0.2 0.4 0.6 FREQUENCY (GHz) [1] Rbias=R1=200 Ohms. See application circuit Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2delivery, and Drive, to placeChelmsford, orders: Analog MA Devices, Inc., For price,is delivery and Devices to place orders: Hittite Microwave Elizabeth 01824 responsibility assumed by Analog for its use, nor for any infringements of patents orCorporation, other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 978-250-3373 fax Devices. * Order On-line at www.hittite.com Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any* patent or patent rights of Analog Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of theirApplication respective owners. Support: pll@hittite.com 6-6 HMC770LP4BE v02.1111 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz 75 Ohm Data Return Loss vs. Rbias 0 Rbias =1.5k Ohms Rbias =600 Ohms Rbias =200 Ohms -10 S11 -15 -20 TE RETURN LOSS (dB) -5 -25 0 0.2 [1] 0.4 0.6 FREQUENCY (GHz) 0.8 1 Noise Figure vs. Temperature for Low Frequencies [1][2] LE Noise Figure vs. Temperature +25C +85C -40C 4 2 0 0 B SO 6 0.2 0.4 0.6 0.8 NOISE FIGURE (dB) 8 8 NOISE FIGURE (dB) PLLs - SMT -30 S22 4 2 0 0 1 25 50 O NOISE FIGURE (dB) NOISE FIGURE (dB) 4.5V 5.0V 5.5V 2 0 0.2 0.4 125 150 175 200 8 4 0 100 Noise Figure vs. Vdd for Low Frequencies [1][2] 8 6 75 FREQUENCY (MHz) FREQUENCY (GHz) Noise Figure vs. Vdd [1] +25C +85C -40C 6 0.6 0.8 1 FREQUENCY (GHz) 4.5V 5.0V 5.5V 6 4 2 0 0 25 50 75 100 125 150 175 200 FREQUENCY (MHz) [1] Rbias=R1=200 Ohms. See application circuit. [2] See application circuit for the tune for low frequencies. 6-7 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2delivery, and to place Chelmsford, orders: Analog MA Devices, Inc., For price,is delivery and Devices to place orders: Hittite Microwave Elizabeth Drive, 01824 responsibility assumed by Analog for its use, nor for any infringements of patents or Corporation, other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 978-250-3373 fax Devices. * Order On-line at www.hittite.com Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any*patent or patent rights of Analog Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their Application respective owners. Support: pll@hittite.com HMC770LP4BE v02.1111 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz 75 Ohm Data Noise Figure vs. Rbias for Low Frequencies [1][2] Noise Figure vs. Rbias 8 NOISE FIGURE (dB) Rbias = 1.5k Ohms Rbias = 600 Ohms Rbias = 200 Ohms 6 2 2 0.2 0.4 0.6 0.8 0 1 25 50 75 100 125 150 175 200 FREQUENCY (MHz) LE FREQUENCY (GHz) plls - SMT 0 P1dB vs. Vdd [1] P1dB vs. Temperature [1] 30 30 25 20 15 B SO 25 P1dB (dBm) 4 0 0 +25C +85C -40C 10 5 0 Rbias=1.5k Ohms Rbias=600 Ohms Rbias=200 Ohms 6 TE 4 0 0.2 0.4 0.6 0.8 1 20 15 4.5V 5.0V 5.5V 10 5 0 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 O FREQUENCY (GHz) P1dB (dBm) NOISE FIGURE (dB) 8 [1] Rbias=R1=200 Ohms. See application circuit. [2] See application circuit for the tune for low frequencies. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2delivery, and Drive, to placeChelmsford, orders: Analog MA Devices, Inc., For price,is delivery and Devices to place orders: Hittite Microwave Elizabeth 01824 responsibility assumed by Analog for its use, nor for any infringements of patents orCorporation, other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 978-250-3373 fax Devices. * Order On-line at www.hittite.com Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any* patent or patent rights of Analog Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of theirApplication respective owners. Support: pll@hittite.com 6-8 HMC770LP4BE v02.1111 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz 75 Ohm Data Output IP3 vs. Temperature [1] 50 25 45 20 40 IP3 (dBm) 30 15 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 0.8 1 Output IP3 vs. Rbias 50 50 45 45 Rbias = 1.5k Ohms Rbias = 600 Ohms Rbias = 200 Ohms 40 35 30 B SO 40 4.5V 5.0V 5.5V 25 20 20 1 LE 0 +25C +85C -40C 25 Output IP3 vs. Vdd [1] IP3 (dBm) PLLs - SMT 0 30 Rbias = 1.5k Ohms Rbias = 600 Ohms Rbias = 200 Ohms 5 35 TE 10 0 0.2 0.4 0.6 0.8 1 IP3 (dBm) P1dB (dBm) P1dB vs. Rbias 35 30 25 20 0 0.2 0.4 0.6 FREQUENCY (GHz) FREQUENCY (GHz) 20 15 NOISE (pA/ Hz) O Input Referred Current Noise vs. Frequency [1] 10 5 0 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 [1] Rbias=R1=200 Ohms. See application circuit 6-9 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2delivery, and to place Chelmsford, orders: Analog MA Devices, Inc., For price,is delivery and Devices to place orders: Hittite Microwave Elizabeth Drive, 01824 responsibility assumed by Analog for its use, nor for any infringements of patents or Corporation, other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 978-250-3373 fax Devices. * Order On-line at www.hittite.com Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any*patent or patent rights of Analog Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their Application respective owners. Support: pll@hittite.com HMC770LP4BE v02.1111 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz Drain Bias Voltage 5.5 Vdc RF Input Power (RFIN) +20 dBm Channel Temperature 150 C Continuous Pdiss (T=85 C) (derate 33.21 mW/ C Above +85 C) 2.16W Thermal Resistance (channel to ground paddle) 30.11 C/W Storage Temperature -65 to 150 C Operating Temperature -40 to +85 C ESD Sensitivity (HBM) Class 1A TE Absolute Maximum Ratings plls - SMT B SO LE Outline Drawing NOTES: O 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY. 3. LEAD AND GROUND PADDLE PLATING: 100% MATTE TIN 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 6. PAD BURR LENGTH SHALL BE 0.15mm MAX. PAD BURR HEIGHT SHALL BE 0.05mm MAX. 7. PACKAGE WARP SHALL NOT EXCEED 0.05mm 8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN. Package Information Part Number Package Body Material Lead Finish HMC770LP4BE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL3 [2] Package Marking [1] H770 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 C Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2delivery, and Drive, to placeChelmsford, orders: Analog MA Devices, Inc., For price,is delivery and Devices to place orders: Hittite Microwave Elizabeth 01824 responsibility assumed by Analog for its use, nor for any infringements of patents orCorporation, other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 978-250-3373 fax Devices. * Order On-line at www.hittite.com Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any* patent or patent rights of Analog Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of theirApplication respective owners. Support: pll@hittite.com 6 - 10 HMC770LP4BE v02.1111 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz Function Description Interface Schematic 1, 5 INN, INP This pin is DC coupled An off chip DC blocking capacitor is required 11, 15 OUTP, OUTN This pin is DC coupled An off chip DC blocking capacitor is required 9, 17 RFCP, RFCN RF Choke and DC Bias (Vdd) for the output stage 2 - 4, 6 - 8, 10, 12 - 14, 16, 18, 19 N/C These pins may be left unconnected. 20 BIAS This pin is used to set the DC current of the amplifier by selection of the external bias resistor. See application circuit. Package Base GND Package bottom must be connected to RF/DC ground. LE TE Pin Number B SO Application Circuit for Transimpedance Amplifier Mode for use with 75 Ohm Evaluation Board O PLLs - SMT Pin Descriptions 6 - 11 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2delivery, and to place Chelmsford, orders: Analog MA Devices, Inc., For price,is delivery and Devices to place orders: Hittite Microwave Elizabeth Drive, 01824 responsibility assumed by Analog for its use, nor for any infringements of patents or Corporation, other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 978-250-3373 fax Devices. * Order On-line at www.hittite.com Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any*patent or patent rights of Analog Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their Application respective owners. Support: pll@hittite.com HMC770LP4BE v02.1111 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz plls - SMT B SO LE TE Application Circuit for Differential Amplifier Mode for use with either 50 or 75 Ohm Evaluation Board Components for Selected Options 50 Ohm 50 Ohm Low Frequency 75 Ohm 75 Ohm Low Frequency Evaluation PCB Number 125980 127930 121737 127931 O Tune Option J1, J2 T1, T2 [1] SMA connector ETC 1-1-13 ETC1-1T-5TR F connector ETC 1-1-13 ETC1-1T-5TR [1] 1:1 Balun Balun ETC1-1-13 is recommended for broadband and high frequency applications with the limitation that ETC1-1-13 degrades noise performance below 200 MHz. Balun ETC1-1T-5TR is recommended for low frequency applications with the limitation that ETC1-1T-5TR degrades gain above 500 MHz. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2delivery, and Drive, to placeChelmsford, orders: Analog MA Devices, Inc., For price,is delivery and Devices to place orders: Hittite Microwave Elizabeth 01824 responsibility assumed by Analog for its use, nor for any infringements of patents orCorporation, other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 978-250-3373 fax Devices. * Order On-line at www.hittite.com Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any* patent or patent rights of Analog Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of theirApplication respective owners. Support: pll@hittite.com 6 - 12 HMC770LP4BE v02.1111 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz B SO PLLs - SMT LE TE Evaluation PCB - 50 Ohm List of Materials for Evaluation PCB Item J1, J2 J3 C1-C4, C6, C13, C15 [1] Description Johnson SMA Connector 2 mm DC Header 10 nF Capacitor, 0603 Pkg. 100 pF Capacitor, 0402 Pkg. C14 2.2 F Capacitor, Tantalum L1, L2 1 uH Inductor, 0805 Pkg. R1 (Rbias) 200 Ohm Resistor, 0402 Pkg. R2, R3 0 Ohm Resistor, 0805 Pkg. T1, T2 [2] 1:1 Transformer U1 HMC770LP4BE Gain Block Amplifier PCB [3] 125978 Evaluation PCB O C5, C11, C12 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. [1] When requesting an evaluation board, please reference the appropriate evaluation PCB number listed in the table "Components for Selected Options." [2] Please refer to "Components for Selected Options" table for values [3] Circuit Board Material: Rogers 4350 6 - 13 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2delivery, and to place Chelmsford, orders: Analog MA Devices, Inc., For price,is delivery and Devices to place orders: Hittite Microwave Elizabeth Drive, 01824 responsibility assumed by Analog for its use, nor for any infringements of patents or Corporation, other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 978-250-3373 fax Devices. * Order On-line at www.hittite.com Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any*patent or patent rights of Analog Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their Application respective owners. Support: pll@hittite.com HMC770LP4BE v02.1111 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz List of Materials for Evaluation PCB Item J1, J2 J3 - J6 C1 - C4, C6, C13, C15 [1] Description F-Connector DC Pin 10 nF Capacitor, 0603 Pkg. 100 pF Capacitor, 0402 Pkg. C14 2.2 F Capacitor, Tantalum L1, L2 1 uH Inductor, 0805 Pkg. R1 (Rbias) 200 Ohm Resistor, 0402 Pkg. R2, R3 0 Ohm Resistor, 0805 Pkg. T1, T2 [2] 1:1 Transformer U1 HMC770LP4BE Gain Block Amplifier PCB [3] 121735 Evaluation PCB O C5, C11-C12 plls - SMT B SO LE TE Evaluation PCB - 75 Ohm The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 75 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. [1] When requesting an evaluation board, please reference the appropriate evaluation PCB number listed in the table "Components for Selected Options." [2] Please refer to "Components for Selected Options" table for values [3] Circuit Board Material: Rogers 4350 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2delivery, and Drive, to placeChelmsford, orders: Analog MA Devices, Inc., For price,is delivery and Devices to place orders: Hittite Microwave Elizabeth 01824 responsibility assumed by Analog for its use, nor for any infringements of patents orCorporation, other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 978-250-3373 fax Devices. * Order On-line at www.hittite.com Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any* patent or patent rights of Analog Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of theirApplication respective owners. Support: pll@hittite.com 6 - 14