2N6400 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. * Glass Passivated Junctions with Center Gate Geometry for Greater Parameter Uniformity and Stability * Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability * Blocking Voltage to 800 Volts * Device Marking: Logo, Device Type, e.g., 2N6400, Date Code http://onsemi.com SCRs 16 AMPERES RMS 50 thru 800 VOLTS G A *MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Symbol Peak Repetitive Off-State Voltage(1) (TJ = 40 to 125C, Sine Wave 50 to 60 Hz; Gate Open) 2N6400 2N6401 2N6402 2N6403 2N6404 2N6405 VDRM, VRRM On-State RMS Current (180 Conduction Angles; TC = 100C) IT(RMS) 16 A Average On-State Current (180 Conduction Angles; TC = 100C) IT(AV) 10 A Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125C) ITSM 160 A * Circuit Fusing (t = 8.3 ms) Forward Peak Gate Power (Pulse Width 1.0 s, TC = 100C) Forward Average Gate Power (t = 8.3 ms, TC = 100C) Forward Peak Gate Current (Pulse Width 1.0 s, TC = 100C) Operating Junction Temperature Range Storage Temperature Range Value K Unit Volts 4 50 100 200 400 600 800 1 2 3 TO-220AB CASE 221A STYLE 3 PIN ASSIGNMENT 1 Cathode I2t 145 A2s 2 Anode PGM 20 Watts 3 Gate 4 Anode PG(AV) 0.5 Watts IGM 2.0 A TJ - 40 to +125 C Tstg - 40 to +150 C ORDERING INFORMATION Device Package Shipping 2N6400 TO220AB 500/Box 2N6401 TO220AB 500/Box 2N6402 TO220AB 500/Box 2N6403 TO220AB 500/Box 2N6404 TO220AB 500/Box 2N6405 TO220AB 500/Box *Indicates JEDEC Registered Data. (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 1999 February, 2000 - Rev. 1 1 Publication Order Number: 2N6400/D 2N6400 Series THERMAL CHARACTERISTICS Characteristic Symbol Max Unit RJC 1.5 C/W TL 260 C Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit -- -- -- -- 10 2.0 A mA OFF CHARACTERISTICS * Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) TJ = 25C TJ = 125C IDRM, IRRM ON CHARACTERISTICS * Peak Forward On-State Voltage (ITM = 32 A Peak, Pulse Width 1 ms, Duty Cycle 2%) VTM -- -- 1.7 Volts * Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) IGT -- -- 9.0 -- 30 60 mA -- -- 0.7 -- 1.5 2.5 0.2 -- -- -- 18 40 -- -- 60 -- 1.0 -- -- -- 15 35 -- -- -- 50 -- * Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) Gate Non-Trigger Voltage (VD = 12 Vdc, RL = 100 Ohms) * Holding Current (VD = 12 Vdc, Initiating Current = 200 mA, Gate Open) TC = 25C TC = -40C VGT TC = 25C TC = -40C VGD TC = +125C TC = 25C IH *TC = -40C Turn-On Time (ITM = 16 A, IGT = 40 mAdc, VD = Rated VDRM) Turn-Off Time (ITM = 16 A, IR = 16 A, VD = Rated VDRM) Volts tgt Volts s s tq TC = 25C TJ = +125C mA DYNAMIC CHARACTERISTICS Critical Rate-of-Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform) dv/dt TJ = +125C *Indicates JEDEC Registered Data. http://onsemi.com 2 V/s 2N6400 Series Voltage Current Characteristic of SCR + Current Symbol Parameter VDRM IDRM Peak Repetitive Off State Forward Voltage Anode + VTM on state Peak Forward Blocking Current VRRM IRRM Peak Repetitive Off State Reverse Voltage VTM IH Peak On State Voltage IH IRRM at VRRM Peak Reverse Blocking Current Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region + Voltage IDRM at VDRM Forward Blocking Region (off state) Anode - 16 124 P(AV) , AVERAGE POWER (WATTS) TC, MAXIMUM CASE TEMPERATURE ( C) 128 = CONDUCTION ANGLE 120 116 112 dc 108 104 = 30 180 60 90 180 14 TJ 125C 100 120 dc 60 10 = 30 8.0 6.0 4.0 = CONDUCTION ANGLE 2.0 120 90 12 0 0 7.0 5.0 6.0 1.0 2.0 3.0 4.0 8.0 9.0 IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS) 10 Figure 1. Average Current Derating 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS) 10 Figure 2. Maximum On-State Power Dissipation http://onsemi.com 3 2N6400 Series 200 100 50 30 20 TJ = 25C 10 125C 7.0 5.0 160 3.0 1 CYCLE I TSM , PEAK SURGE CURRENT (AMP) i TM , INSTANTANEOUS ON-STATE FORWARD CURRENT (AMPS) 70 2.0 150 140 1.0 0.7 130 0.5 TJ = 125C f = 60 Hz 120 0.3 110 0.2 0.4 1.6 2.0 2.4 2.8 4.0 0.8 1.2 3.2 3.6 vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 2.0 1.0 4.4 3.0 4.0 6.0 8.0 10 NUMBER OF CYCLES Figure 3. On-State Characteristics r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT Figure 4. Maximum Non-Repetitive Surge Current 1.0 0.7 0.5 0.3 0.2 ZJC(t) = RJC * r(t) 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 50 20 30 t, TIME (ms) 100 Figure 5. Thermal Response http://onsemi.com 4 200 300 500 1.0 k 2.0 k 3.0 k 5.0 k 10 k 2N6400 Series TYPICAL CHARACTERISTICS OFF-STATE VOLTAGE = 12 V RL = 50 W 30 20 TJ = -40C 100 10 7.0 5.0 25C 3.0 2.0 125C I GT, GATE TRIGGER CURRENT (mA) i GT, PEAK GATE CURRENT (mA) 100 70 50 1.0 0.2 0.5 1.0 2.0 5.0 10 20 PULSE WIDTH (ms) 50 100 10 1 -40 -25 200 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (C) 95 110 125 Figure 7. Typical Gate Trigger Current versus Junction Temperature Figure 6. Typical Gate Trigger Current versus Pulse Width 1.0 100 0.9 IH , HOLDING CURRENT (mA) VGT, GATE TRIGGER VOLTAGE (VOLTS) -10 0.8 0.7 0.6 0.5 0.4 10 0.3 0.2 -40 -25 -10 5 20 35 50 65 80 95 110 1 -40 -25 -10 125 TJ, JUNCTION TEMPERATURE (C) 5 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (C) Figure 8. Typical Gate Trigger Voltage versus Junction Temperature Figure 9. Typical Holding Current versus Junction Temperature http://onsemi.com 5 110 125 2N6400 Series PACKAGE DIMENSIONS TO-220AB CASE 221A-07 ISSUE Z -T- B F T SEATING PLANE C S 4 Q A U 1 2 3 H K Z R L V J G D N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 STYLE 3: PIN 1. 2. 3. 4. http://onsemi.com 6 CATHODE ANODE GATE ANODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 2N6400 Series Notes http://onsemi.com 7 2N6400 Series ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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