2N5642 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N5642 is Designed for 28 V Large Signal Class C Amplifier Applications up to 175 MHz. PACKAGE STYLE .380" 4L STUD FEATURES INCLUDE: * Emitter Ballasting * Gold Metalization * 3/8" SOE Stud Package MAXIMUM RATINGS IC 3.0 A VCE 35 V VCB 65 V PDISS 30 W @ TC = 25 C TJ -65 C to + 200 C TSTG -65 C to + 150 C JC 5.8 C/W O O O O O 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE O CHARACTERISTICS O TC = 25 C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 200 mA 65 V BVCEO IC = 200 mA 35 V BVEBO IE = 10 mA 4.0 V ICBO VCB = 30 V hFE VCE = 5.0 V COB VCB = 30 V PG C VCC =28 V 1.0 IC = 200 mA --- 5.0 f = 1.0 MHz POUT = 20 W f = 175 MHz 35 8.2 60 mA 10 pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 1/1 Specifications are subject to change without notice.