5SDD 19T3000
TS - DV/116/04 Jul-10 1 of 6
5SDD 19T3000
Old part no. DV 808C-1890-30
Rectifier Diode
Properties Key Parameters
§ Industry standard housing VRRM = 3 000 V
§ Suitable for parallel operation IFAVm = 1 926 A
§ High operating temperature IFSM = 26 000
A
§ Low forward voltage drop VTO = 0.972 V
rT = 0.149 mΩ
Types
VRRM
5SDD 19T3000
5SDD 19T2800 3 000 V
2 800 V
Conditions:
Tj = -40 ÷ 150 °C,
half sine waveform,
f = 50 Hz
Mechanical Data
Fm Mounting force 25 ± 5
kN
m Weight 0.44
kg
DS Surface creepage
distance 22
mm
Da Air strike distance 13.9
mm
Fig. 1 Case
ABB s.r.o.
Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
tel.: +420 261 306 250, http://www.abb.com/semiconductors
5SDD 19T3000
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DV/116/04 Jul-10 2 of 6
Maximum Ratings Maximum Limits Unit
VRRM Repetitive peak reverse
voltage
Tj = -40 ÷ 150 °C
5SDD 19T3000
5SDD 19T2800 3 000
2 800 V
IFAVm Average forward current
Tc = 85 °C 1 926 A
IFRMS RMS forward current
Tc = 85 °C 3 025 A
IRRM Repetitive reverse current
VR = VRRM 40 mA
tp = 10 ms 26 000
IFSM Peak non-repetitive surge
half sine pulse, VR = 0 V tp = 8.3 ms 27 800
A
tp = 10 ms 20 800
IFSM Peak non-repetitive surge
half sine pulse, VR = 0.7 VRRM tp = 8.3 ms 22 200
A
tp = 10 ms 3 338 000
I2t Limiting load integral
half sine pulse, VR = 0 V tp = 8.3 ms 3 210 000
A2s
tp = 10 ms 2 163 000
I2t Limiting load integral
half sine pulse, VR = 0.7 VRRM tp = 8.3 ms 2 045 000
A2s
Tjmin -Tjmax Operating temperature range -40 ÷ 150 °C
TSTG Storage temperature range -40 ÷ 175 °C
Unless otherwise specified Tj = 150 °C
Value Characteristics
min typ max
Unit
VT0 Threshold voltage 0.972
V
rT Forward slope resistance
IF1 = 2 969 A, IF2 = 8 906 A 0.149
mΩ
VFM Maximum forward voltage
IFM = 5 000 A, Tj = 25 °C 1.575
V
Qrr Recovered charge
VR = 100 V, IFM = 1 000 A, di/dt = -30 A/µs 3 800
µC
Unless otherwise specified Tj = 150 °C
5SDD 19T3000
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DV/116/04 Jul-10 3 of 6
Thermal Parameters Value Unit
double side cooling 18.5 K/kW
anode side cooling 33
Rthjc Thermal resistance
junction to case
cathode side cooling 42
double side cooling 4 K/kW
Rthch Thermal resistance
case to heatsink single side cooling 8
Transient Thermal Impedance
i 1 2 3 4 5
τi ( s ) 0.4293 0.0940 0.0413 0.0042 0.0005
Ri( K/kW )
9.22 5.65 1.79 1.76 0.06
0
2
4
6
8
10
12
14
16
18
20
0,001 0,01 0,1 1 10
Square wave pulse duration td ( s )
Transient thermal impedance
junction to case Zthjc ( K/kW )
Analytical function for transient
thermal impedance
∑
=τ−−= 5
1))/exp(1(
iiithjc tRZ
Conditions:
Fm = 25 ± 5 kN, Double side cooled
Correction for periodic waveforms
180°
sine: 1.6
K/kW
180°
rectangular:
2.2
K/kW
120°
rectangular:
3.6
K/kW
60°
rectangular:
5.9
K/kW
Fig. 2
Dependence transient thermal impedance junction
to case on square pulse
5SDD 19T3000
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DV/116/04 Jul-10 4 of 6
Maximum forward voltage drop characteristics
Tj ( °C ) A B
25 5.0351 E-1 1.1473 E-4
150 7.5931 E-2 1.6382 E-4
Tj ( °C ) C D
25 -4.1929 E-3 9.3316 E-2
150 -6.3547 E-3 1.4976 E-1
0
2000
4000
6000
8000
10000
12000
14000
16000
18000
20000
01234
VF ( V )
IF ( A )
Tj = 25 °C
150 °C
Analytical function for maximum
forward drop characteristics
)1ln( +⋅+⋅+⋅+= FFFF IDICIBAV
Conditions:
Fm = 25 ± 5 kN, halfsine pulse 8.3 ÷ 10 ms
Fig. 3 Maximum forward voltage drop characteristics
5SDD 19T3000
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DV/116/04 Jul-10 5 of 6
5
10
15
20
25
30
35
40
45
1 10 100
t ( ms )
IFSM ( kA )
1
1,5
2
2,5
3
3,5
4
4,5
5
i2dt (106 A2s)
I
FSM
V
R
= 0 V
∫
i2dt
V
R
= 0 V
V
R
= 0.7 V
RRM
V
R
= 0.7 V
RRM
0
5
10
15
20
25
30
1 10 100
Number n of pulses at 50 Hz
IFSM ( kA )
V
R
= 0
V
R
≤ 0.7 V
RRM
Fig. 4
Surge forward current vs. pulse length,
half sine wave, single pulse, Tj = Tjmax Fig. 5
Surge forward current vs. number
of pulses, half sine wave, Tj = Tjmax
0
500
1000
1500
2000
2500
3000
3500
4000
0 500 1000 1500 2000 2500
IFAV ( A )
PT ( W )
120°
180
DC
ψ
= 60°
0
500
1000
1500
2000
2500
3000
3500
4000
0500 1000 1500 2000 2500
IFAV ( A )
PT ( W )
ψ
= 30°
60°
90°
120°
180°
270°
DC
Fig. 6
Forward power loss vs. average forward
current, sine waveform, f = 50 Hz, T = 1/f Fig. 7
Forward power loss vs. average forward
current, square waveform, f = 50 Hz, T = 1/f
5SDD 19T3000
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DV/116/04 Jul-10 6 of 6
60
70
80
90
100
110
120
130
140
150
0 500 1000 1500 2000 2500
IFAV ( A )
TC ( °C )
180°
120°
DC
ψ
= 60°
60
70
80
90
100
110
120
130
140
150
0 500 1000 1500 2000 2500
IFAV ( A )
TC ( °C )
180°
DC
270°
120°
90°
60°
ψ
= 30°
Fig. 8
Max. case temperature vs. aver. forward
current, sine waveform, f = 50 Hz, T = 1/f Fig. 9
Max.case temperature vs. aver. forward
current, square waveform, f = 50 Hz, T = 1/f
Notes:
