©2004 Fairchild Semiconductor Corporation ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S 3 Rev. C3, October 2004
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3
Package Marking and Ordering Information
Electrical Characteristics TA = 25°C unless otherwise noted
Off State Characteristics
On State Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Ch ara cteris t ics
Device Marking Device Pac kage Reel Size Tape Width Quantity
V5036S ISL9V5036S3ST TO-263AB 330mm 24mm 800
V5036P ISL9V5036P3 TO-220AA Tube N/A 50
V5036S ISL9V5036S3 TO-262AA Tube N/A 50
V5036S ISL9V5036S3S TO-263AB Tube N/A 50
Symbol P arameter Test Conditions Min Typ Max Units
BVCER Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0,
RG = 1KΩ, See Fig. 15
TJ = -40 to 150°C
330 360 390 V
BVCES Collector to Emitter Breakdown Voltage IC = 10m A, VGE = 0,
RG = 0, See Fig. 15
TJ = -40 to 150°C
360 390 420 V
BVECS Emitter to Collector Breakdown Voltage IC = -75mA, VGE = 0V,
TC = 25°C30 - - V
BVGES Gate to Emitter Breakdown Voltage IGES = ± 2mA ±12 ±14 - V
ICER Collector to Emitter Leakage Current VCER = 250V,
RG = 1KΩ,
See Fig. 11
TC = 25°C- - 25 µA
TC = 150°C- - 1 mA
IECS Emitter to Collector Leakage Current VEC = 24V, See
Fig. 11 TC = 25°C- - 1 mA
TC = 150°C- - 40 mA
R1Series Gate Resistance - 75 - Ω
R2Gate to Emitter Resistance 10K - 30K Ω
VCE(SAT) Collect or to Emitter Satur ation Voltage IC = 10A,
VGE = 4.0V TC = 25°C,
See Fig. 4 - 1.17 1.60 V
VCE(SAT) Collect or to Emitter Satur ation Voltage IC = 15A,
VGE = 4.5V TC = 150°C - 1.50 1.80 V
QG(ON) Gate Charge IC = 10A, VCE = 12V,
VGE = 5V, See Fig. 14 -32-nC
VGE(TH) Gate to Emitter Threshold Voltage IC = 1.0mA,
VCE = VGE,
See Fig. 10
TC = 25°C1.3 - 2.2 V
TC = 150°C0.75- 1.8V
VGEP Gate to Emitter Plateau Voltage IC = 10A, VCE = 12V - 3.0 - V
td(ON)R Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1Ω,
VGE = 5V, RG = 1KΩ
TJ = 25°C, See Fig. 12
-0.74µs
trR Current Rise Time-Resistive - 2.1 7 µs
td(OFF)L Curr ent Turn- Off Delay Time-Inductive VCE = 300V, L = 2mH,
VGE = 5V, RG = 1KΩ
TJ = 25°C, See Fig. 12
- 10.8 15 µs
tfL Current Fall Time-Inductive - 2.8 15 µs
SCIS Self Clamped Inductive Switching TJ = 25°C, L = 670 µH,
RG = 1KΩ, VGE = 5V, See
Fig. 1 & 2
- - 500 mJ
RθJC Ther mal Resistance Junction-Case TO-263, TO-220, TO-262 - - 0.6 °C/W