TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Compact TO-220 AB package. http://onsemi.com Features 1 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40, 60, 80, 100 VOLTS, 80 WATTS * Pb-Free Packages are Available* MARKING DIAGRAM 4 1 TO-220AB CASE 221A STYLE 1 2 TIPxxxG AYWW 3 TIPxxx A Y WW G = Device Code: 29, 29A, 29B, 29C 30, 30A, 30B, 30C = Assembly Location = Year = Work Week = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2005 September, 2005 - Rev. 8 1 Publication Order Number: TIP29B/D TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIIII IIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIIII IIIIIIII IIIIIII IIIIIIIIIIIIIIII IIII IIII IIII IIII III IIII IIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIII IIII IIII III IIII IIIIIIIIIIIIIIII IIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIII IIII IIIIIIIIIIII IIII IIII IIII IIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIIII IIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIII IIII IIIIIIIIIIII IIII IIII IIII IIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIIII IIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIII IIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIII IIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIII IIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIII MAXIMUM RATINGS Symbol TIP29 TIP30 TIP29A TIP30A TIP29B TIP30B TIP29C TIP30C Unit VCEO 40 60 80 100 Vdc Collector - Base Voltage VCB 40 60 80 100 Vdc Emitter - Base Voltage Rating Collector - Emitter Voltage VEB 5.0 Vdc Collector Current - Continuous - Peak IC 1.0 3.0 Adc Base Current IB 0.4 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 30 0.24 W W/_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD 2.0 0.016 W W/_C Unclamped Inductive Load Energy (Note 1) E 32 mJ TJ, Tstg - 65 to + 150 _C Symbol Max Unit Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Ambient RqJA 62.5 _C/W Thermal Resistance, Junction-to-Case RqJC 4.167 _C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. This rating based on testing with LC = 20 mH, RBE = 100 W, VCC = 10 V, IC = 1.8 A, P.R.F = 10 Hz ORDERING INFORMATION Device Package Shipping TO-220 50 Units / Rail TIP29G TO-220 (Pb-Free) 50 Units / Rail TIP29A TO-220 50 Units / Rail TO-220 (Pb-Free) 50 Units / Rail TO-220 50 Units / Rail TO-220 (Pb-Free) 50 Units / Rail TO-220 50 Units / Rail TO-220 (Pb-Free) 50 Units / Rail TIP29 TIP29AG TIP29B TIP29BG TIP29C TIP29CG TIP30 TO-220 50 Units / Rail TIP30G TO-220 (Pb-Free) 50 Units / Rail TIP30A TO-220 50 Units / Rail TO-220 (Pb-Free) 50 Units / Rail TO-220 50 Units / Rail TO-220 (Pb-Free) 50 Units / Rail TO-220 50 Units / Rail TO-220 (Pb-Free) 50 Units / Rail TIP30AG TIP30B TIP30BG TIP30C TIP30CG http://onsemi.com 2 TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIII IIIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIII III IIII IIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIII IIII ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Collector-Emitter Sustaining Voltage (IC = 30 mAdc, IB = 0) (Note 2) TIP29, TIP30 TIP29A, TIP30A TIP29B, TIP30B TIP29C, TIP30C VCEO(sus) Unit 40 60 80 100 - - - - - - 0.3 0.3 - - - - 200 200 200 200 IEBO - 1.0 mAdc hFE 40 15 - 75 - Collector-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 125 mAdc) VCE(sat) - 0.7 Vdc Base-Emitter On Voltage (IC = 1.0 Adc, VCE = 4.0 Vdc) VBE(on) - 1.3 Vdc Current-Gain - Bandwidth Product (Note 3) (IC = 200 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 3.0 - MHz Small-Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20 - - OFF CHARACTERISTICS Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) Vdc ICEO TIP29, TIP29A, TIP30, TIP30A TIP29B, TIP29C, TIP30B, TIP30C Collector Cutoff Current (VCE = 40 Vdc, VEB = 0) (VCE = 60 Vdc, VEB = 0) (VCE = 80 Vdc, VEB = 0) (VCE = 100 Vdc, VEB = 0) mAdc mAdc ICES TIP29, TIP30 TIP29A, TIP30A TIP29B, TIP30B TIP29C, TIP30C Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.2 Adc, VCE = 4.0 Vdc) DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) DYNAMIC CHARACTERISTICS 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0% 3. fT = hfe* ftest http://onsemi.com 3 TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) 3.0 2.0 500 TJ = 150C VCE = 2.0 V ts 25C 100 70 50 t, TIME (s) hFE , DC CURRENT GAIN 300 -55 C 30 10 7.0 5.0 0.03 1.0 0.7 0.5 0.3 0.2 0.05 0.07 0.1 0.5 0.7 1.0 0.3 IC, COLLECTOR CURRENT (AMP) TURN-ON PULSE APPROX +11 V 0.03 0.03 3.0 SCOPE Vin t2 TURN-OFF PULSE 0.7 0.5 RB Cjd << Ceb t1 7.0 ns 100 < t2 < 500 ms t3 < 15 ns 3.0 IC/IB = 10 TJ = 25C 1.0 t, TIME (s) APPROX +11 V 2.0 2.0 RC t1 t3 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) Figure 2. Turn-Off Time VCC Vin Vin 0 -4.0 V 0.3 0.1 0.07 0.05 DUTY CYCLE 2.0% APPROX -9.0 V 0.03 0.02 0.03 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. Figure 3. Switching Time Equivalent Circuit 1 ms dc 0.1 SECOND BREAKDOWN LIMITED THERMALLY LIMITED @ TC = 25C BONDING WIRE LIMITED TIP29, 30 CURVES APPLY BELOW TIP29A, 30A RATED VCEO TIP29B, 30B TIP29C, 30C 0.1 1.0 4.0 10 20 40 VCE, COLLECTOR-EMITTER VOLTAGE, (VOLTS) tr @ VCC = 10 V td @ VEB(off) = 2.0 V 0.05 0.07 0.1 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 3.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. TJ = 150C 3.0 tr @ VCC = 30 V Figure 4. Turn-On Time 10 IC, COLLECTOR CURRENT (AMPS) tf @ VCC = 10 V 0.1 0.07 0.05 Figure 1. DC Current Gain VEB(off) tf @ VCC = 30 V IB1 = IB2 IC/IB = 10 ts = ts - 1/8 tf TJ = 25C 5 ms 100 Figure 5. Active Region Safe Operating Area http://onsemi.com 4 TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AA -T- B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. 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Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com http://onsemi.com 5 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. TIP29B/D