TIP30A - ON Semiconductor - Datasheet.Live

September, 2005 − Rev. 8 1Publication Order Number:

TIP29B/D

TIP29, A, B, C (NPN),

TIP30, A, B, C (PNP)

Complementary Silicon

Plastic Power Transistors

Designed for use in general purpose amplifier and switching

applications. Compact TO−220 AB package.

Features

•Pb−Free Packages are Available*

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TO−220AB

CASE 221A

STYLE 1

MARKING

DIAGRAM

1 AMPERE

POWER TRANSISTORS

COMPLEMENTARY SILICON

40, 60, 80, 100 VOLTS,

80 WATTS

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123

TIPxxx = Device Code:

29, 29A, 29B, 29C

30, 30A, 30B, 30C

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

TIPxxxG

AYWW

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)

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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎÎ

TIP29

TIP30

ÎÎÎÎ

TIP29A

TIP30A

ÎÎÎÎ

TIP29B

TIP30B

ÎÎÎ

TIP29C

TIP30C

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector − Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎÎ

ÎÎÎ

100

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector − Base Voltage

ÎÎÎÎ

VCB

ÎÎÎÎ

ÎÎÎ

100

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter − Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎÎÎÎÎÎÎ

5.0

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current − Continuous

− Peak

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎ

1.0

3.0

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎ

0.4

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation

@ TC = 25_C

Derate above 25_C

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎ

0.24

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

W/_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation

@ TA = 25_C

Derate above 25_C

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎ

2.0

0.016

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

W/_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Unclamped Inductive Load Energy (Note 1)

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction Temperature Range

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎÎÎÎÎ

–65 to +150

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction−to−Ambient

ÎÎÎÎ

RqJA

ÎÎÎÎÎÎÎÎÎÎÎÎ

62.5

ÎÎÎÎ

_C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction−to−Case

ÎÎÎÎ

RqJC

ÎÎÎÎÎÎÎÎÎÎÎÎ

4.167

ÎÎÎÎ

_C/W

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit

values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,

damage may occur and reliability may be affected.

1. This rating based on testing with LC = 20 mH, RBE = 100 W, VCC = 10 V, IC = 1.8 A, P.R.F = 10 Hz

ORDERING INFORMATION

Device Package Shipping

TIP29 TO−220 50 Units / Rail

TIP29G TO−220

(Pb−Free) 50 Units / Rail

TIP29A TO−220 50 Units / Rail

TIP29AG TO−220

(Pb−Free) 50 Units / Rail

TIP29B TO−220 50 Units / Rail

TIP29BG TO−220

(Pb−Free) 50 Units / Rail

TIP29C TO−220 50 Units / Rail

TIP29CG TO−220

(Pb−Free) 50 Units / Rail

TIP30 TO−220 50 Units / Rail

TIP30G TO−220

(Pb−Free) 50 Units / Rail

TIP30A TO−220 50 Units / Rail

TIP30AG TO−220

(Pb−Free) 50 Units / Rail

TIP30B TO−220 50 Units / Rail

TIP30BG TO−220

(Pb−Free) 50 Units / Rail

TIP30C TO−220 50 Units / Rail

TIP30CG TO−220

(Pb−Free) 50 Units / Rail

TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)

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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage (IC = 30 mAdc, IB = 0) (Note 2)TIP29, TIP30

TIP29A, TIP30A

TIP29B, TIP30B

TIP29C, TIP30C

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

100

ÎÎÎ

−

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0) TIP29, TIP29A, TIP30, TIP30A

(VCE = 60 Vdc, IB = 0) TIP29B, TIP29C, TIP30B, TIP30C

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

ICEO

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

−

ÎÎÎ

0.3

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 40 Vdc, VEB = 0) TIP29, TIP30

(VCE = 60 Vdc, VEB = 0) TIP29A, TIP30A

(VCE = 80 Vdc, VEB = 0) TIP29B, TIP30B

(VCE = 100 Vdc, VEB = 0) TIP29C, TIP30C

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

ICES

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

−

ÎÎÎ

200

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎÎ

IEBO

ÎÎÎÎ

−

ÎÎÎ

1.0

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (Note 2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (IC = 0.2 Adc, VCE = 4.0 Vdc)

DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

hFE

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎÎ

−

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 125 mAdc)

ÎÎÎÎÎ

VCE(sat)

ÎÎÎÎ

−

ÎÎÎ

0.7

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter On Voltage (IC = 1.0 Adc, VCE = 4.0 Vdc)

ÎÎÎÎÎ

VBE(on)

ÎÎÎÎ

−

ÎÎÎ

1.3

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current−Gain − Bandwidth Product (Note 3)

(IC = 200 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

3.0

ÎÎÎ

−

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small−Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz)

ÎÎÎÎÎ

hfe

ÎÎÎÎ

ÎÎÎ

−

ÎÎÎÎ

−

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%

3. fT = ⎪hfe⎪• ftest

TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)

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0.03

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

0.03

hFE, DC CURRENT GAIN

0.5

5.0

3.0

100

7.0

300

0.1 0.3

0.07 1.0

TJ = 150°C

25°C

−55 °C

VCE = 2.0 V

500

3.0

t, TIME (s)μ

Figure 2. Turn−Off Time

IC, COLLECTOR CURRENT (AMP)

IB1 = IB2

IC/IB = 10

ts′ = ts − 1/8 tf

TJ = 25°C

ts′

TURN−ON PULSE

APPROX

+11 V

Vin 0

VEB(off) t1

APPROX

+11 V

Vin

TURN−OFF PULSE

t1 ≤ 7.0 ns

100 < t2 < 500 ms

t3 < 15 ns

DUTY CYCLE ≈ 2.0%

APPROX −9.0 V

RB and RC VARIED TO OBTAIN

DESIRED CURRENT LEVELS.

SCOPE

VCC

Vin

Cjd << Ceb

−4.0 V

Figure 3. Switching Time Equivalent Circuit

0.03

Figure 4. Turn−On Time

IC, COLLECTOR CURRENT (AMP)

0.02 0.1 3.0

0.07

1.0

IC/IB = 10

TJ = 25°C

tr @ VCC = 10 V

t, TIME (s)μ

0.5

0.3

0.1

0.05

0.05 0.3 0.5

td @ VEB(off) = 2.0 V

0.03

0.7

2.0

0.07 0.7

tr @ VCC = 30 V

0.05 0.7

tf @ VCC = 10 V

tf @ VCC = 30 V

0.07

1.0

0.5

0.3

0.1

0.05

0.03

0.7

2.0

0.2

0.1 3.01.00.05 0.3 0.50.07 0.7 2.00.2

Figure 5. Active Region Safe Operating Area

VCE, COLLECTOR−EMITTER VOLTAGE, (VOLTS)

0.1 10

SECOND BREAKDOWN LIMITED

THERMALLY LIMITED @ TC = 25°C

BONDING WIRE LIMITED

IC, COLLECTOR CURRENT (AMPS)

1.0 20 10

3.0

4.0

0.1

TIP29, 30

TIP29A, 30A

TIP29B, 30B

TIP29C, 30C

TJ = 150°C

CURVES APPLY BELOW

RATED VCEO

1 ms

5 ms

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − V CE

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on T J(pk) = 150_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

v 150_C. At high case temperatures, thermal limitations

will reduce the power that can be handled to values less than

the limitations imposed by second breakdown.

TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)

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PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AA

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.018 0.025 0.46 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 −−− 1.15 −−−

Z−−− 0.080 −−− 2.04

123

SEATING

PLANE

−T−

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

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TIP29B/D

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