ZXMS6005N8Q 60V N-CHANNEL SELF-PROTECTED ENHANCEMENT MODE LOW-SIDE IntelliFET ADVANCE INFORMATION Product Summary Features and Benefits Continuous Drain Source Voltage: 60V On-State Resistance: 200m Nominal Load Current (VIN = 5V): 2.0A Clamping Energy: 120mJ Description TM The ZXMS6005N8Q is a self-protected low-side IntelliFET MOSFET with logic level input. It integrates overtemperature, overcurrent, overvoltage (active clamp) and ESD protected logic level functionality. The ZXMS6005N8Q is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough. Low Input Current Logic Level Input (3.3V and 5V) Short Circuit Protection with Auto Restart Overvoltage Protection (Active Clamp) Thermal Shutdown with Auto Restart Overcurrent Protection Input Protection (ESD) High Continuous Current Rating Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Applications Especially Suited for Loads with a High In-rush Current Such as Lamps and Motors All Types of Resistive, Inductive and Capacitive Loads in Switching Applications C Compatible Power Switch for 12V and 24V DC Applications Replaces Electromechanical Relays and Discrete Circuits Linear Mode Capability - the current-limiting protection circuitry is designed to deactivate at low VDS to minimize on-state power dissipation. The maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the product's ability to self-protect at low VDS SO-8 Case: SO-8 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Weight: 80.2mg (Approximate) D IN S S D S D S D IN D Device Symbol Top View Top View Pin Out Ordering Information (Note 5) Part Number ZXMS6005N8Q-13 Notes: Marking 6005N8 Reel Size (inches) 13 Tape Width (mm) 12 Quantity per Reel 2,500 units 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information 6005N8 YYWW = Manufacturer's Marking 6005N8 = Product Type Marking Code YYWW = Date Code Marking YY: Year WW: Week: 01~52; 52 represents 52 and 53 week IntelliFET is a trademark of Diodes Incorporated. ZXMS6005N8Q Document number: DS38514 Rev. 2 - 2 1 of 8 www.diodes.com June 2017 (c) Diodes Incorporated ZXMS6005N8Q ADVANCE INFORMATION Functional Block Diagram Absolute Maximum Ratings (@TA= +25C, unless otherwise stated.) Characteristic Continuous Drain-Source Voltage Drain-Source Voltage for Short Circuit Protection Symbol Value Unit VDS 60 V VDS(SC) 24 V Continuous Input Voltage VIN V Continuous Input Current @-0.2V VIN 6V Continuous Input Current @VIN < -0.2V or VIN > 6V IIN -0.5 to +6 No Limit IIN 2 Pulsed Drain Current @VIN = 3.3V IDM 5 A Pulsed Drain Current @VIN = 5V IDM 6 A IS 2.5 A ISM 10 A Continuous Source Current (Body Diode) (Note 6) mA Pulsed Source Current (Body Diode) Unclamped Single Pulse Inductive Energy, TJ = +25C, ID = 0.5A, VDD = 24V Electrostatic Discharge (Human Body Model) EAS 120 mJ VHBM 4,000 V Charged Device Model VCDM 1,000 V Recommended Operating Conditions The ZXMS6005N8Q is optimized to use with C operating from 3.3V and 5V supplies. Symbol Min Max Input Voltage Range Characteristic VIN 0 5.5 V Ambient Temperature Range TA -40 +125 C High Level Input Voltage for MOSFET to be On VIH 3 5.5 V Low Level Input Voltage for MOSFET to be Off VIL 0 0.7 V VP 0 24 V Peripheral Supply Voltage (Voltage to Which Load is Referred) ZXMS6005N8Q Document number: DS38514 Rev. 2 - 2 2 of 8 www.diodes.com Unit June 2017 (c) Diodes Incorporated ZXMS6005N8Q Thermal Resistance (@TA= +25C, unless otherwise specified.) ADVANCE INFORMATION Characteristic Power Dissipation at TA= +25C (Note 6) Linear Derating Factor Power Dissipation at TA= +25C (Note 7) Linear Derating Factor Thermal Resistance, Junction to Ambient (Note 6) Symbol Value Unit PD 1.28 10 1.65 12.4 W mW/C W mW/C PD RJA 98 C/W Thermal Resistance, Junction to Ambient (Note 7) RJA 76 C/W Thermal Resistance, Junction to Case (Note 8) RJC 12 C/W TJ -40 to +150 C TSTG -55 to +150 C Operating Temperature Range Storage Temperature Range Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 8. Thermal resistance between junction and the mounting surfaces of drain and source pins. Single Pulse TA = 25C ZXMS6005N8Q Document number: DS38514 Rev. 2 - 2 3 of 8 www.diodes.com June 2017 (c) Diodes Incorporated ZXMS6005N8Q ADVANCE INFORMATION Electrical Characteristics (@TA= +25C, unless otherwise stated.) Characteristic Static Characteristics Drain-Source Clamp Voltage Symbol Min Typ Max Unit VDS(AZ) 60 -- -- 0.7 -- -- -- -- -- 1.4 1.6 1.9 2.0 2.2 3.3 65 -- -- 1 60 120 -- 170 150 -- -- -- -- 5 7 70 1 2 1.5 100 200 300 250 200 -- -- -- -- -- -- V tD(ON) tR tD(OFF) tF -- -- -- -- 5 14 34 19 -- -- -- -- s TJT TJT +150 -- +175 +10 -- -- C C Off-State Drain Current IDSS Input Threshold Voltage VIN(TH) Input Current IIN Input Current While Overtemperature Active -- Static Drain-Source On-State Resistance RDS(ON) Continuous Drain Current (Note 6) ID Continuous Drain Current (Note 7) Current Limit (Note 9) Dynamic Characteristics Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Overtemperature Protection Thermal Overload Trip Temperature (Note 10) Thermal Hysteresis (Note 10) Notes: ID(LIM) A V A A m A A Test Condition ID = 10mA VDS = 12V, VIN = 0V VDS = 36V, VIN = 0V VDS = VGS, ID = 1mA VIN = 3V VIN = 5V VIN = 5V VIN = 3V, ID = 1.0A VIN = 5V, ID = 1.0A VIN = 3V, TA = +25C VIN = 5V, TA = +25C VIN = 3V, TA = +25C VIN = 5V, TA = +25C VIN = 3V VIN = 5V VDD = 12V, ID = 0.5A, VGS = 5V -- -- 9. The drain current is restricted only when the device is in saturation (see graph Typical Output Characteristic). This allows the device to be used in the fully on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside saturation makes current limit unnecessary. 10. Overtemperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as outside normal operating range, so this part is not designed to withstand over-temperature for extended periods. ZXMS6005N8Q Document number: DS38514 Rev. 2 - 2 4 of 8 www.diodes.com June 2017 (c) Diodes Incorporated ZXMS6005N8Q IS, Source Current (A) ADVANCE INFORMATION Typical Characteristics ZXMS6005N8Q Document number: DS38514 Rev. 2 - 2 5 of 8 www.diodes.com June 2017 (c) Diodes Incorporated ZXMS6005N8Q ADVANCE INFORMATION Typical Characteristics (Cont.) ZXMS6005N8Q Document number: DS38514 Rev. 2 - 2 6 of 8 www.diodes.com June 2017 (c) Diodes Incorporated ZXMS6005N8Q Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. ADVANCE INFORMATION SO-8 SO-8 Dim Min Max Typ A 1.40 1.50 1.45 A1 0.10 0.20 0.15 b 0.30 0.50 0.40 c 0.15 0.25 0.20 D 4.85 4.95 4.90 E 5.90 6.10 6.00 E1 3.80 3.90 3.85 E0 3.85 3.95 3.90 e --1.27 h -0.35 L 0.62 0.82 0.72 Q 0.60 0.70 0.65 All Dimensions in mm E 1 b E1 h ) ides All s ( 9 A R .1 0 e Q 45 7 c 4 3 A1 E0 L Gauge Plane Seating Plane D Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 X1 Dimensions Value (in mm) C 1.27 X 0.802 X1 4.612 Y 1.505 Y1 6.50 Y1 Y C ZXMS6005N8Q Document number: DS38514 Rev. 2 - 2 X 7 of 8 www.diodes.com June 2017 (c) Diodes Incorporated ZXMS6005N8Q ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright (c) 2017, Diodes Incorporated www.diodes.com ZXMS6005N8Q Document number: DS38514 Rev. 2 - 2 8 of 8 www.diodes.com June 2017 (c) Diodes Incorporated