ZXMS6005N8Q
Document number: DS38514 Rev. 2 - 2
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June 2017
© Diodes Incorporated
ADVANCE INFO R MA T I O N
ZXMS6005N8Q
60V N-CHANNEL SELF-PROTECTED ENHANCEMENT MODE LOW-SIDE IntelliFET
Product Summary
Continuous Drain Source Voltage: 60V
On-State Resistance: 200mΩ
Nominal Load Current (VIN = 5V): 2.0A
Clamping Energy: 120mJ
Description
The ZXMS6005N8Q is a self-protected low-side IntelliFETTM
MOSFET with logic level input. It integrates overtemperature,
overcurrent, overvoltage (active clamp) and ESD protected logic level
functionality. The ZXMS6005N8Q is ideal as a general purpose
switch driven from 3.3V or 5V microcontrollers in harsh environments
where standard MOSFETs are not rugged enough.
Applications
Especially Suited for Loads with a High In-rush Current Such as
Lamps and Motors
All Types of Resistive, Inductive and Capacitive Loads in
Switching Applications
μC Compatible Power Switch for 12V and 24V DC Applications
Replaces Electromechanical Relays and Discrete Circuits
Linear Mode Capability – the current-limiting protection circuitry
is designed to deactivate at low VDS to minimize on-state power
dissipation. The maximum DC operating current is therefore
determined by the thermal capability of the package/board
combination, rather than by the protection circuitry. This does not
compromise the product’s ability to self-protect at low VDS
Features and Benefits
Low Input Current
Logic Level Input (3.3V and 5V)
Short Circuit Protection with Auto Restart
Overvoltage Protection (Active Clamp)
Thermal Shutdown with Auto Restart
Overcurrent Protection
Input Protection (ESD)
High Continuous Current Rating
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 80.2mg (Approximate)
Ordering Information (Note 5)
Part Number
Marking
Reel Size (inches)
Tape Width (mm)
Quantity per Reel
ZXMS6005N8Q-13
6005N8
13
12
2,500 units
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
SO-8
Top View
D
S
IN
Device Symbol
D
S
S
S
IN
D
D
D
Top View
Pin Out
IntelliFET is a trademark of Diodes Incorporated.
= Manufacturer’s Marking
6005N8 = Product Type Marking Code
YYWW = Date Code Marking
YY: Year
WW: Week: 01~52;
52 represents 52 and 53 week
6005N8
YYWW
ZXMS6005N8Q
Document number: DS38514 Rev. 2 - 2
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ZXMS6005N8Q
Functional Block Diagram
Absolute Maximum Ratings (@TA= +25°C, unless otherwise stated.)
Characteristic
Symbol
Value
Unit
Continuous Drain-Source Voltage
VDS
60
V
Drain-Source Voltage for Short Circuit Protection
VDS(SC)
24
V
Continuous Input Voltage
VIN
-0.5 to +6
V
Continuous Input Current @-0.2V ≤ VIN ≤ 6V
Continuous Input Current @VIN < -0.2V or VIN > 6V
IIN
No Limit
│IIN│≤ 2
mA
Pulsed Drain Current @VIN = 3.3V
IDM
5
A
Pulsed Drain Current @VIN = 5V
IDM
6
A
Continuous Source Current (Body Diode) (Note 6)
IS
2.5
A
Pulsed Source Current (Body Diode)
ISM
10
A
Unclamped Single Pulse Inductive Energy,
TJ = +25°C, ID = 0.5A, VDD = 24V
EAS
120
mJ
Electrostatic Discharge (Human Body Model)
VHBM
4,000
V
Charged Device Model
VCDM
1,000
V
Recommended Operating Conditions
The ZXMS6005N8Q is optimized to use with μC operating from 3.3V and 5V supplies.
Characteristic
Symbol
Min
Max
Unit
Input Voltage Range
VIN
0
5.5
V
Ambient Temperature Range
TA
-40
+125
°C
High Level Input Voltage for MOSFET to be On
VIH
3
5.5
V
Low Level Input Voltage for MOSFET to be Off
VIL
0
0.7
V
Peripheral Supply Voltage (Voltage to Which Load is Referred)
VP
0
24
V
ZXMS6005N8Q
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Thermal Resistance (@TA= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation at TA= +25°C (Note 6)
Linear Derating Factor
PD
1.28
10
W
mW/°C
Power Dissipation at TA= +25°C (Note 7)
Linear Derating Factor
PD
1.65
12.4
W
mW/°C
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
98
°C/W
Thermal Resistance, Junction to Ambient (Note 7)
RθJA
76
°C/W
Thermal Resistance, Junction to Case (Note 8)
RθJC
12
°C/W
Operating Temperature Range
TJ
-40 to +150
°C
Storage Temperature Range
TSTG
-55 to +150
°C
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
8. Thermal resistance between junction and the mounting surfaces of drain and source pins.
Single Pulse
TA = 25°C
ZXMS6005N8Q
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Electrical Characteristics (@TA= +25°C, unless otherwise stated.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Static Characteristics
Drain-Source Clamp Voltage
VDS(AZ)
60
65
70
V
ID = 10mA
Off-State Drain Current
IDSS
—
—
1
μA
VDS = 12V, VIN = 0V
—
—
2
VDS = 36V, VIN = 0V
Input Threshold Voltage
VIN(TH)
0.7
1
1.5
V
VDS = VGS, ID = 1mA
Input Current
IIN
—
60
100
μA
VIN = 3V
—
120
200
VIN = 5V
Input Current While Overtemperature Active
—
—
—
300
μA
VIN = 5V
Static Drain-Source On-State Resistance
RDS(ON)
—
170
250
mΩ
VIN = 3V, ID = 1.0A
—
150
200
VIN = 5V, ID = 1.0A
Continuous Drain Current (Note 6)
ID
1.4
—
—
A
VIN = 3V, TA = +25°C
1.6
—
—
VIN = 5V, TA = +25°C
Continuous Drain Current (Note 7)
1.9
—
—
VIN = 3V, TA = +25°C
2.0
—
—
VIN = 5V, TA = +25°C
Current Limit (Note 9)
ID(LIM)
2.2
5
—
A
VIN = 3V
3.3
7
—
VIN = 5V
Dynamic Characteristics
Turn-On Delay Time
tD(ON)
—
5
—
μs
VDD = 12V, ID = 0.5A, VGS = 5V
Rise Time
tR
—
14
—
Turn-Off Delay Time
tD(OFF)
—
34
—
Fall Time
tF
—
19
—
Overtemperature Protection
Thermal Overload Trip Temperature (Note 10)
TJT
+150
+175
—
°C
—
Thermal Hysteresis (Note 10)
∆TJT
—
+10
—
°C
—
Notes: 9. The drain current is restricted only when the device is in saturation (see graph ―Typical Output Characteristic‖). This allows the device to be used in the
fully on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside
saturation makes current limit unnecessary.
10. Overtemperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as ―outside‖ normal
operating range, so this part is not designed to withstand over-temperature for extended periods.
ZXMS6005N8Q
Document number: DS38514 Rev. 2 - 2
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ZXMS6005N8Q
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SO-8
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SO-8
1
b
e
E
A
A1
9° (All sides)
4°± 3°
c
Q
h
45°
R 0.1
7°
D
E0
E1
L
Seating Plane
Gauge Plane
CX
Y
Y1
X1
SO-8
Dim
Min
Max
Typ
A
1.40
1.50
1.45
A1
0.10
0.20
0.15
b
0.30
0.50
0.40
c
0.15
0.25
0.20
D
4.85
4.95
4.90
E
5.90
6.10
6.00
E1
3.80
3.90
3.85
E0
3.85
3.95
3.90
e
--
--
1.27
h
-
--
0.35
L
0.62
0.82
0.72
Q
0.60
0.70
0.65
All Dimensions in mm
Dimensions
Value (in mm)
C
1.27
X
0.802
X1
4.612
Y
1.505
Y1
6.50
ZXMS6005N8Q
Document number: DS38514 Rev. 2 - 2
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ZXMS6005N8Q
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