2N7000 N-Ch, Enhancement Mode Field Effect Transistor TO-92 Type Package Features: D High Density Cell Design for Low RDS(ON) D Voltage Controlled Small Signal Switch D Rugged and Reliable D High Saturation Current Capability D G S Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Drain-Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Drain-Gate Voltage (RGS 1M), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Gate-Source Voltage, VGS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Non-Repetitive (tp 50s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Maximum Drain Current, ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Junction-to-Ambient, Rth(JA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 312.5C/W Maximum Lead Temperature for Soldering Purposes, 1/16" from Case, 10sec), TL . . . . . . . +300C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VGS = 0V, ID = 10A 60 - - V VDS = 48V, VGS = 0 - - 1.0 A - - 1.0 mA OFF Characteristics Drain-Source Breakdown Voltage BVDss Zero-Gate-Voltage Drain Current IDSS TJ = +125C Gate-Body Leakage Current, Forward IGSSF VGSF = 15V, VDS = 0 - - 10 nA Gate-Body Leakage Current, Reverse IGSSR VGSF = -15V, VDS = 0 - - -10 nA Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) ON Characteristics (Note 1) Gate Threshold Voltage VGS(th) ID = 1mA, VDS = VGS 0.8 2.1 3.0 V Static Drain-Source ON Resistance rDS(on) VGS = 10V, ID = 500mA - 1.2 5.0 - 1.9 9.0 VGS = 4.5V, ID = 75mA - 1.8 5.3 VGS = 10V, ID = 500mA - 0.6 2.5 V VGS = 4.5V, ID = 75mA - 0.14 0.4 V ID(on) VGS = 4.5V, VDS = 10V 75 600 - mA gFS VDS = 10V, ID = 200mA 100 320 - mS Input Capacitance Ciss VDS = 25V, VGS = 0V, f = 1MHz - 20 50 pF Reverse Transfer Capacitance Coss - 11 25 pF Output Capacitance Crss - 4 5 pF - - 10 ns - - 10 ns Drain-Source ON-Voltage ON-State Drain Current Forward Transconductance VDS(on) TJ = +125C Dynamic Characteristics Turn-On Time ton Turn-Off Time toff VDD = 15V, RL = 25, ID = 500mA, VGS = 10V, RGEN = 25 Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. .135 (3.45) Min .210 (5.33) Max Seating Plane .500 (12.7) Min .021 (.445) Dia Max S G D .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .205 (5.2) Max .105 (2.67) Max