G
S
D
2N7000
N−Ch, Enhancement Mode
Field Effect Transistor
TO−92 Type Package
Features:
DHigh Density Cell Design for Low RDS(ON)
DVoltage Controlled Small Signal Switch
DRugged and Reliable
DHigh Saturation Current Capability
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Drain−Source Voltage, VDSS 60V.........................................................
Drain−Gate Voltage (RGS 1M), VDGR 60V..............................................
Gate−Source Voltage, VGS
Continuous 20V.................................................................
Non−Repetitive (tp 50s) 40V...................................................
Maximum Drain Current, ID
Continuous 200mA...............................................................
Pulsed 500mA...................................................................
Maximum Power Dissipation, PD400mW.................................................
Derate above 25C 3.2mW/C.....................................................
Operating Junction Temperature Range, TJ−55 to +150C..................................
Storage Temperature Range, Tstg −55 to +150C..........................................
Thermal Resistance, Junction−to−Ambient, Rth(JA) 312.5C/W................................
Maximum Lead Temperature for Soldering Purposes, 1/16” from Case, 10sec), TL+300C.......
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Drain−Source Breakdown Voltage BVDss VGS = 0V, ID = 10A 60 − − V
Zero−Gate−Voltage Drain Current IDSS VDS = 48V,
VGS = 0
− − 1.0 A
TJ = +125C− − 1.0 mA
Gate−Body Leakage Current, Forward IGSSF VGSF = 15V, VDS = 0 − − 10 nA
Gate−Body Leakage Current, Reverse IGSSR VGSF = −15V, VDS = 0 − − −10 nA
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
ON Characteristics (Note 1)
Gate Threshold Voltage VGS(th) ID = 1mA, VDS = VGS 0.8 2.1 3.0 V
Static Drain−Source ON Resistance rDS(on) VGS = 10V,
ID = 500mA
−1.2 5.0
TJ = +125C−1.9 9.0
VGS = 4.5V, ID = 75mA −1.8 5.3
Drain−Source ON−Voltage VDS(on) VGS = 10V, ID = 500mA −0.6 2.5 V
VGS = 4.5V, ID = 75mA −0.14 0.4 V
ON−State Drain Current ID(on) VGS = 4.5V, VDS = 10V 75 600 −mA
Forward Transconductance gFS VDS = 10V, ID = 200mA 100 320 −mS
Dynamic Characteristics
Input Capacitance Ciss VDS = 25V, VGS = 0V, f = 1MHz −20 50 pF
Reverse Transfer Capacitance Coss −11 25 pF
Output Capacitance Crss −4 5 pF
Turn−On Time ton VDD = 15V, RL = 25,
ID = 500mA, VGS = 10V,
RGEN = 25
− − 10 ns
Turn−Off Time toff − − 10 ns
Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
S G D
Seating Plane
.135 (3.45) Min
.100 (2.54)
.050 (1.27)
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max
.210
(5.33)
Max
.500
(12.7)
Min
.165
(4.2)
Max
.021 (.445)
Dia Max