SILICON EPITAXIAL SCHOTTKY BARRIER TYPE ULTRA HIGH SPEED SWITCHING APPLICATION. 1$$344 Unit in mm - Low Forward Voltage : Vp=0.50V(Typ.) a5 tht . Fast Reverse Recovery Time : trr=20ns(Typ.) 028 + - High Average Forward Current : Ig=0.5A(Max.) 15-015 re) | se CH i cal jal 2 S | 2] = 2) | 8 3 MAXIMUM RATINGS (Ta=25C) 3 ae CHARACTERISTIC SYMBOL RATING UNIT | oO Maximum(Peak) Reverse Voltage VR 25 Vv an | $s os Reverse Voltage VR 20 Vv +) = 7 co Maximum(Peak) Forward Current LEM 1.5 A ~ t t Average Forward Current Io 0.5 A 5 Surge Current (10ms) IFsM 5 A 20 = - yz. Power Dissipation P 200 nV 2. ANODE i 3. CATHODE Junction Temperature Tj 125 c JEDEC _ Storage Temperature Tstg -55~125 C RIAJ SC-59 Operating Temperature Topr -~40~100 c TOSHIBA 1-3G1B Weight : 0.013 ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN.| TYP.| MAX.] UNIT VF(1) If=10mA - 0.30 - Forward Voltage VF(2) Ip=100mA - 0.38 - Vv VF(3) Ip=500mA - 0.50 | 0.55 Ir(1) VR=l0V - - 20 Reverse Current uA TR(2) Vp=20V - - 100 Total Capacitance CT Vr=OV, f=1MHz - 120 - pF Reverse Recovery Time trr Ip=50mA (Fig.1) - 20 - ns Fig. | REVERSE RECOVERY TIME (try) TEST CIRCUIT INPUT WAVEFORM 0 -6V | | LJ 300 ns PULSE GENERATOR (Rour = 50.0 ) IN QUT 500 OSCILLOSCOPE C RIn= 500) OUTPUT WAVEFORM Ip=50mA a | Marking (TOP VIEW) 3 A Tp /| f 0.1] 1185 H9 R ff 1$$344 Ip V Ip ~- Vr J F F 100 # Ta=100T 30u 300m 75 suer 100m = < 3a = 30m = le & HH 6 Z 10m 3 300n & mo 5 a sa 100n 3m 72) = & S A 30 I 30n lm 10n 3 0.3m Sn 0.1m In 0 0.2 0.4 06 0.8 1.0 1.2 0 4 8 12 16 20 24 FORWARD VOLTAGE Vp (V) REVERSE VOLTAGE Vp (V) 1186