A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
S
p
ecifi cations are sub
j
ect to chan
g
e without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
BVCBO IC = 1.0 mA 45 V
BVCER IC = 5.0 mA RBE = 10 Ω45 V
BVEBO IE = 1.0 mA 3.5 V
ICBO VCB = 28 V 0.5 mA
hFE VCE = 5.0 V IC = 100 mA 15 150 ---
Cob VCB = 28 V f = 1.0 MHz 3.0 3.5 pF
Pout
PG
η
ηη
ηC
VCC = 28 V Pin = 200 mW fo = 2.0 GHz 1.0
7.0
35
1.25
8.0
40
W
dB
%
NPN SILICON RF POWER TRANSISTOR
MSC80914
DESCRIPTION:
The ASI MSC80914 is Designed for
Class C, Common Base G ener al
Purpose Applications to 2. 3 GHz.
FEATURES INCLUDE:
• Gold Metalization
• Site Emitter Ballasting
MAXIMUM RATINGS
IC200 mA
VCC 35 V
PDISS 7.0 W @ T C = 25 OC
TJ-55 OC to +200 OC
TSTG -55 OC to +200 OC
θ
θθ
θJC 20 OC/W
PACKAGE STYLE .250 2L FLG
MINIMUM
inches / mm
.740 / 18.80
.128 / 3.25
.245 / 6.22
.028 / 0.71
.110 / 2.79
B
C
D
E
F
G
A
MAXIMUM
.255 / 6.48
.032 / 0.81
.117 / 2.97
.132 / 3.35
inches / mm
.117 / 2.97
H.560 / 14.22 .570 / 14.48
DIM
K
L
I
J
.790 / 20.07
.225 / 5.72
.003 / 0.08
.810 / 20.57
.235 / 5.97
.007 / 0.18
L
G I
J
K
H F
BE
C
ØD
A
N
MP
.060 x 45°
CHAMFER
P
N
M
.149 / 3.78
.058 / 1.47
.187 / 4.75
.068 / 1.73
.165 / 4.19 .185 / 4.70
.135 / 3.43.119 / 3.02
.125 / 3.18
