MASW-011029-14140W - M/A-COM Technology Solutions

Wideband, 75 - 100 GHz, AlGaAs SP3T

PIN Diode Switch with integrated bias circuits

Rev. V3

MASW-011029

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

DC-0012625

Features

 60 - 110 GHz Broadband Operating Frequency

 1.3 dB Insertion Loss

 33 dB Isolation

 Silicon Nitride Passivation

 BCB Scratch Protection

 Lead-Free GaAs MMIC Chip

 RoHS* Compliant and 260°C Reflow Compatible

Description

The MASW-011029 is a wideband SP3T switch

manufactured using MACOM’s patented AlGaAs PIN

Diode MMIC process, on a semi-insulating GaAs

substrate. The device is fully passivated with silicon

nitride and has an additional layer of BCB for scratch

protection. This protective coating prevents damage

to the circuit during automated or manual handling.

These devices are suitable for pick and place

insertion.

Each RF port contains DC blocking capacitors and a

DC bias circuit consisting of high impedance lines

and RF bypass capacitors. This device has 100 um

gold plated bonding pads at all RF and DC ports. RF

and DC ground backside gold plating allows

conventional chip bonding techniques using

80Au/20Sn solder, Indalloy solder, or electrically

conductive silver epoxy.

Applications include satellite communications,

millimeter-wave radar, 77 GHz automotive cruise

control radar, and 94 GHz imaging in astronomy,

defense, and security applications.

Ordering Information

* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.

Functional Schematic

Bondpad Configuration1,2

Bondpad No. Function

J1 Common, RF1 (GSG)

J2 Output, RF2 (GSG)

B2 J2 Bias Control

J3 Output, RF3 (GSG)

B3 J3 Bias Control

J4 Output, RF4 (GSG)

B4 J4 Bias Control

1. Bondpad metal is gold and backside metal is gold.

2. The backside metal must be connected to RF and DC ground.

Part Number Package

MASW-011029-14140W Waffle Pak

Outline

Wideband, 75 - 100 GHz, AlGaAs SP3T

PIN Diode Switch with integrated bias circuits

Rev. V3

MASW-011029

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

DC-0012625

Electrical Specifications: Freq. = 75 - 100 GHz, TA = 25°C, +10 mA / -25 V, Z0 = 50 Ω

Parameter Units Min. Typ. Max.

Insertion Loss dB — 1.3 —

Isolation dB — 33 —

Forward Bias, 10 mA V 1.15 — 1.40

Blocking Capacitor Leakage Current, -25 V nA — — 50

Diode Leakage Current, -32 V nA — — 50

Switching Speed, 10% - 90% RF Voltage ns — 2 —

Truth Table & Bias Conditions @ Low Loss State

RF Inputs B2 B3 B4

J1 to J2 -4.5 V3 10 mA4 10 mA4

J1 to J3 10 mA4 -4.5 V3 10 mA4

J1 to J4 10 mA4 10 mA4 -4.5 V3

3. Minimum reverse bias voltage (VR) should be determined based on working conditions. For example, VR = -4.5 V @ 23 dBm input power.

For lower applications, a less negative voltage can be used. R. Caverly and G. Hiller, ―Establishing the Minimum Reverse Bias for a PIN

Diode in a High Power Switch,‖ IEEE Transactions on Microwave Therory and Techniques, Vol.38,No.12, December 1990. For higher line-

arity the VR it may be as high as –25 V.

4. Forward bias current (IF) is set using external bias resistors (RBIAS) placed at pins B1, B2, and B3, where RBIAS = (VCC - 1.32 V) / IF.

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

Gallium Arsenide Integrated Circuits are sensitive to

electrostatic discharge (ESD) and can be damaged

by static electricity. Proper ESD control techniques

should be used when handling these devices.

Absolute Maximum Ratings5,6

Parameter Absolute Maximum

Input Power 23 dBm

DC Current, per diode 15 mA

DC Voltage -25 V

Junction Temperature7 +150°C

Operating Temperature -25°C to +85°C

Storage Temperature -65°C to +150°C

5. Exceeding any one or combination of these limits may cause

permanent damage to this device.

6. MACOM does not recommend sustained operation near these

survivability limits.

7. Operating at nominal conditions with TJ ≤ +150°C will ensure

MTBF > 1 x 106 hours.

Wideband, 75 - 100 GHz, AlGaAs SP3T

PIN Diode Switch with integrated bias circuits

Rev. V3

MASW-011029

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

DC-0012625

MASW-011029 Typical Performance Curves, 75 - 100 GHz8

Return Loss, Input and Output

Insertion Loss Isolation

Insertion Loss

Isolation

-5.0

-4.5

-4.0

-3.5

-3.0

-2.5

-2.0

-1.5

-1.0

-0.5

0.0

75 80 85 90 95 100

S21 (dB)

Frequency (GHz)

-60

-55

-50

-45

-40

-35

-30

-25

-20

-15

-10

-5

75 80 85 90 95 100

S21 (dB)

Frequency (GHz)

MA4GC6774 (Former Part Number) Reference Data, 60 - 75 GHz8

-5.0

-4.5

-4.0

-3.5

-3.0

-2.5

-2.0

-1.5

-1.0

-0.5

0.0

60 65 70 75

S21 (dB)

Frequency (GHz)

-60

-55

-50

-45

-40

-35

-30

-25

-20

-15

-10

-5

60 65 70 75

S21 (dB)

Frequency (GHz)

-60

-55

-50

-45

-40

-35

-30

-25

-20

-15

-10

-5

60 65 70 75

S21 (dB)

Frequency (GHz)

8. Measured data is highly dependent on fixturing and equipment

setup.

Wideband, 75 - 100 GHz, AlGaAs SP3T

PIN Diode Switch with integrated bias circuits

Rev. V3

MASW-011029

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

DC-0012625

Outline Drawing

Solder Die Attach

All die attach and bonding methods should be

compatible with gold metal. Solder which does not

scavenge gold, such as 80 Au/20 Sn or Indalloy #2

is recommended. Do not expose die to a

temperature greater than 300°C for more than 10

seconds.

Electrically Conductive Epoxy

Die Attach

Assembly can be preheated to approximately 125°C.

Use a controlled thickness of approximately 2 mils

for best electrical conductivity and lower thermal

resistance. A thin epoxy fillet should be visible

around the perimeter of the chip after placement.

Cure epoxy per manufacturer’s schedule. For

extended cure times, temperatures should be kept

below 150°C.

Wire / Ribbon Bonding

Wedge thermo compression bonding may be used

to attach ribbons to the RF bonding pads. Gold

ribbons should be 1/4 by 3 mil sq. for lowest

inductance. The same 1/4 by 3 mil sq. gold ribbon or

1 mil dia. gold wire is recommended for all DC pads.

Wideband, 75 - 100 GHz, AlGaAs SP3T

PIN Diode Switch with integrated bias circuits

Rev. V3

MASW-011029

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

DC-0012625

Information in this document is provided in connection with MACOM Technology Solutions Inc ("MACOM")

products. These materials are provided by MACOM as a service to its customers and may be used for

informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or

in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM

assumes no responsibility for errors or omissions in these materials. MACOM may make changes to

specifications and product descriptions at any time, without notice. MACOM makes no commitment to update

the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future

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to any intellectual property rights is granted by this document.

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