NPN-Silizium-Fototransistor in SMT TOPLED(R) RG-Gehause Silicon NPN Phototransistor in SMT TOPLED(R) RG-Package SFH 3211 SFH 3211 FA SFH 3211 SFH 3211 FA Wesentliche Merkmale Features * Speziell geeignet fur Anwendungen im Bereich von 380 nm bis 1150 nm (SFH 3211) und bei 880 nm (SFH 3211 FA) * Hohe Linearitat * Gruppiert lieferbar * Especially suitable for applications from 380 nm to 1150 nm (SFH 3211) and of 880 nm (SFH 3211 FA) * High linearity * Available in groups Anwendungen Applications * Miniaturlichtschranken * Industrieelektronik * Messen/Steuern/Regeln" * Miniature photointerrupters * Industrial electronics * For control and drive circuits Typ Type Bestellnummer Ordering Code SFH 3211 Q62702-P5127 SFH 3211-3/-4 Q62702-P5481 SFH 3211 FA Q62702-P5443 SFH 3211 FA-3/-4 Q62702-P5482 2002-01-25 1 SFH 3211, SFH 3211 FA Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg - 40 ... + 100 C Kollektor-Emitterspannung Collector-emitter voltage VCE 35 V Kollektorstrom Collector current IC 15 mA Kollektorspitzenstrom, < 10 s Collector surge current ICS 75 mA Verlustleistung, TA = 25 C Total power dissipation Ptot 165 mW Warmewiderstand fur Montage auf PC-Board Thermal resistance for mounting on pcb RthJA 450 K/W 2002-01-25 2 SFH 3211, SFH 3211 FA Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value SFH 3211 SFH 3211 FA Einheit Unit Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity S max 860 900 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax 380 ... 1150 730 ... 1120 nm Bestrahlungsempfindliche Flache ( 240 m) Radiant sensitive area A 0.045 0.045 mm2 Abmessung der Chipflache Dimensions of chip area LxB LxW 0.45 x 0.45 0.45 x 0.45 mm x mm 0.5 ... 0.7 0.5 ... 0.7 mm Abstand Chipoberflache zu Gehauseoberflache H Distance chip front to case surface Halbwinkel Half angle 60 60 Grad deg. Kapazitat, VCE = 0 V, f = 1 MHz, E = 0 Capacitance CCE 5.0 5.0 pF Dunkelstrom Dark current VCE = 25 V, E = 0 ICEO 1 ( 200) 1 ( 200) nA 2002-01-25 3 SFH 3211, SFH 3211 FA Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Parameter Symbol Symbol Fotostrom, = 950 nm Photocurrent Ee = 0.1 mW/cm2, VCE = 5 V SFH 3211: Ev = 1000 Ix, Normlicht/ standard light A, VCE = 5 V IPCE Wert Value SFH 3211/FA -2 -3 -4 16 16 ... 32 25 ... 50 40 ... 80 A 420 650 1000 A 7 6 7 8 s 150 150 150 150 mV IPCE tr, tf Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 k Kollektor-EmitterVCEsat Sattigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) x 0.3, Ee = 0.1 mW/cm2 1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe. 1) IPCEmin is the min. photocurrent of the specified group. Directional Characteristics Srel = f () 40 30 20 10 0 OHF01402 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 2002-01-25 0.8 0.6 0.4 0 20 40 60 Einheit Unit 80 100 4 120 SFH 3211, SFH 3211 FA Relative Spectral Sensitivity, SFH 3211 Srel = f () Srel Relative Spectral Sensitivity, SFH 3211 FA Srel = f () OHF00207 100 % Photocurrent IPCE = f (Ee), VCE = 5 V PCE S rel % 80 80 OHF01924 10 3 A OHF00468 100 10 2 70 4 3 2 60 60 10 50 40 1 40 30 10 0 20 20 10 0 400 500 600 700 800 900 0 400 500 600 700 800 900 nm 1100 nm 1100 10 -1 -3 10 mW/cm 2 10 -2 Total Power Dissipation Photocurrent Dark Current Ptot = f (TA) IPCE = f (VCE), Ee = Parameter ICEO = f (VCE), E = 0 OHF00871 200 PCE mW P tot OHF01529 10 0 mA 160 120 1 mW cm 2 0.5 mW cm 2 0.25 mW cm 2 10 0 Ee OHF01527 10 1 nA CEO 10 0 10 -1 10 -1 mW 0.1 2 cm 80 10 -2 40 0 20 0 40 60 80 C 100 TA Dark Current ICEO = f (TA), VCE = 5 V, E = 0 OHF01530 10 3 nA CEO 10 -2 0 5 10 15 20 25 30 V 35 V CE Capacitance CCE = f (VCE), f = 1 MHz, E = 0 10 -3 5 10 15 20 25 30 V 35 V CE Photocurrent IPCE /IPCE25 = f (TA), VCE = 5 V OHF01528 5.0 0 PCE OHF01524 1.6 PCE 25 C CE pF 1.4 4.0 10 2 1.2 3.5 1.0 3.0 10 1 2.5 0.8 2.0 0.6 1.5 10 0 0.4 1.0 0.2 0.5 10 -1 -25 0 2002-01-25 25 50 75 C 100 TA 0 10 -2 10 -1 10 0 5 10 1 V 10 2 V CE 0 -25 0 25 50 75 C 100 TA SFH 3211, SFH 3211 FA Mazeichnung Package Outlines 2.1 (0.083) 3.0 (0.118) 2.6 (0.102) 2.3 (0.091) 1.7 (0.067) 1.0 (0.039) 41 Collector marking Collector 5.4 (0.213) 5.0 (0.197) 0.3 (0.012) min (2.4 (0.094)) 3.4 (0.134) 3.0 (0.118) 0.3 (0.012) max 0.9 (0.035) 2.1 (0.083) 0...0.1 (0.004) 0.6 (0.024) 0.4 (0.016) GPLY6067 Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2002-01-25 6 SFH 3211, SFH 3211 FA Lothinweise Soldering Conditions Bauform Types TOPLED RG Tauch-, Schwall- und Schlepplotung Dip, Wave and Drag Soldering Reflowlotung Reflow Soldering Lotbadtemperatur Maximal zulassige Lotzeit Abstand Lotstelle - Gehause Lotzonentemperatur Maximale Durchlaufzeit Temperature of the Soldering Bath Max. Perm. Soldering Time Distance between Solder Joint and Case Temperature of Soldering Zone Max. Transit Time 260 C 10 s - 245 C 10 s Zusatzliche Informationen uber allgemeine Lotbedingungen erhalten Sie auf Anfrage. For additional information on general soldering conditions please contact us. Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg (c) All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2002-01-25 7