Philips Semiconductors Product specification Le PNP medium power transistor BC869 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION e Low voltage (max. 20 V). 1 emitter 2 collector APPLICATIONS 3 base e Low voltage, high current LF applications. DESCRIPTION 2 PNP medium power transistor in a SOT89 plastic package. NPN complement: BC868. 3 1 MARKING TYPE NUMBER MARKING CODE ' 2 3 BC869 CEC Bottom view MAMz297 BG869-16 CGC Fig.1 Simplified outline (SOT89) and symbol. BC869-25 CHG LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VcBo collector-base voltage open emitter 32 V VcEO collector-emitter voltage open base 20 Vv VEBO emitter-base voltage open collector 5 V Ic collector current (DC) - -1 A lom peak collector current 2 A IBM peak base current 200 mA Prot total power dissipation Tamb < 25 C; note 1 1.35 WwW Tstg storage temperature 65 +150 C Tj junction temperature 150 C Tamb operating ambient temperature 65 +150 C Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm?. For other mounting conditions, see Thermal considerations for SOT89 in the General Part of associated Handbook. 1999 Apr 08 2 Philips Semiconductors Product specification PNP medium power transistor BC869 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 93 K/W Rth j-s thermal resistance from junction to soldering point 13 KAW Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm?. For other mounting conditions, see Thermal considerations for SOT89 in the General Part of associated Handbook. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT IcBo collector cut-off current le = 0; Vep = -25 V 100 |nA le = 0; Vcp = -25 V; Tj = 150 C -10 HA lEBo emitter cut-off current lo = 0; Vep =-5 V 100 |nA hee DC current gain Ic = 5 MA; Vce = 10 V; see Fig.2 50 I = -500 mA; Vce =1 V; see Fig.2 | 100 = 375 Ic =-1 A; Vce = 1 V; see Fig.2 60 - DC current gain I = 500 mA; Vce = 1 V3; see Fig.2 BC869-16 100 = 250 BC869-25 160 375 VcEsat collector-emitter saturation lo = -1 A; lg =-100 mA 500 |mV voltage VBE base-emitter voltage Ilo = -5 MA; Voce = -10 V 620 |- mV lc =-1 A; Vcr =-1 V - - 1 V fr transition frequency Io = 10 MA; Voce = 5 V; f = 100 MHz | 40 = - MHz 1999 Apr 08 Philips Semiconductors Product specification PNP medium power transistor BC869 MGD845 400 NEE 300 oo [=e MN 200 N 100 \ -101 -1 -10 -10? -108 -104 lo (mA) Vor=-1V Fig.2 DC current gain; typical values. 1999 Apr 08 4 Philips Semiconductors Product specification PNP medium power transistor BC869 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 D [5] I A |}~b3| / \ f E \ / | He + L 1 2 3 t 1 I LE _. | _ 1 el co he by =e] +! [e] 0 2 4mm beep tp scale DIMENSIONS (mm are the original dimensions) UNIT; A | by | bo | bg | ec dp | & e |e | He | | ow 1.6 0.48 0.53 1.8 0.44 4.6 2.6 4.25 mm | 44 | 035] 040] 14 | 037] 44 | 24 | 2 | 15 | 375 | O8 | 0-18 OUTLINE REFERENCES EUROPEAN VERSION IEC JEDEC EIAJ PROJECTION ISSUE DATE SOT89 -} 97-02-28 1999 Apr 08 5