Transys Electronics L I M I T E D TO-252-2 Plastic-Encapsulated Transistors 2SD1758 TO-252-2 TRANSISTOR (PNP) 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 2 W (Tamb=25) 3. EMITTER Collector current 2 A ICM: Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=50A , IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 32 V Emitter-base breakdown voltage V(BR)EBO IE=50A, IC=0 5 V Collector cut-off current ICBO VCB=-20V , IE=0 1 A Emitter cut-off current IEBO VEB=4V , 1 A DC current gain hFE VCE= 3V , IC=500mA VCE(sat) IC=2A, IB=0.2A fT VCE= 5V, IE= 50mA,f=100MHz Collector-emitter saturation voltage Transition frequency IC=0 82 390 0.8 80 V MHz