2SD1758 - Transys Electronics

TO-252-2 Plastic-Encapsulated Transistors

2SD1758 TRANSISTOR (PNP)

FEATURES

Power dissipation

PCM: 2 W (Tamb=25℃)

Collector current

ICM: 2 A

Collector-base voltage

V(BR)CBO: 40 V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base br eakdown voltage V(BR)CBO Ic=50µA , IE=0 40 V

Collector-emitter breakdown voltage V(BR)CEO I

C=1mA, IB=0 32 V

E mitter-base breakdow n volt age V(BR)EBO I

E=50µA, IC=0 5 V

Collector cut-off current ICBO V

CB=-20V , IE=0 1 µA

Emitte r c u t -o ff current IEBO V

EB=4V , IC=0 1 µA

DC current gain hFE V

CE= 3V , I C=500mA 82 390

Collector-emitter saturat i on voltage VCE(sat) IC=2A, IB=0.2A 0.8 V

Transition fre quency fT VCE= 5V, IE= 50mA,f=100MHz 80 MHz

TO-252-2

1. BASE

2. COLLECTOR

3. E MITTER

1 2 3

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