Control Devices Control Devices: MMN 7000 Series Low - High Power NIP Diodes Description The MicroMetrics MMN 7000 series NIP diodes are manufactured using very high resistivity silicon epitaxial material grown on a highly doped low resistivity substrate. This, combined with a grown junction N++ layer, yields a very abrupt structured I region with minimum outdoping and low voltage punchthrough characteristics. Features * High Temperature Passivation for Reliability Our high temperature passivation and state of the art metallization produce diodes that are designed to cover a wide range of applications that fall into the general categories of switching, phase switching, attenuating and limiting. These devices are rugged and able to meet all visual criteria in space and military applications. * Lot Traceability and Lot Control, Assuring High Reproducibility * Grown Junction for Sharp "I" Region Interface * Full Area Gold Contact for the Lowest Capacitance and Largest Bonding Pad Available Packaging * Chip, Glass, Ceramic, Surface Mount Typical Performance 1000 SERIES RESISTANCE, RS (Ohms) Applications The NIP series are used in switch applications which include high speed low power switches, medium speed higher power switches, high power switches and attenuators, TR switches and digital phase shifters. MMN7026 100 MMN7028 MMN7036 10 1.0 .10 100 MMN7021 MMN7023 42 100 10 1.0 .10 .10 1.0 10 FORWARD BIAS CURRENT, If (mA) 100 1000 SERIES RESISTANCE, RS (Ohms) SERIES RESISTANCE, RS (Ohms) 1000 .01 .01 .10 1.0 10 FORWARD BIAS CURRENT, If (mA) 100 MMN7032 MMN7034 10 1.0 .10 .01 .10 1.0 10 FORWARD BIAS CURRENT, If (mA) MicroMetrics, Inc. 136 Harvey Road, Building C, Londonderry, NH 03053 Voice: 603-641-3800, Fax: 603-641-3500, Internet: www.micrometrics.com, E-mail: serv@micrometrics.com 100 Electrical Characteristics Ultra Fast Switching Vbr1 MIN (V) Cj-10 V2 MAX (pF) Tl3 TYP (nS) TS4 MAX (nS) Rs5@ 50 mA MAX (Ohms) Rs5@ 10 mA TYP (Ohms) jc MAX C/W 25 25 .15 .25 10 10 1.5 1.5 .55 .4 .8 .6 50 35 Vbr1 MIN (V) Cj-10 V2 MAX (pF) Tl3 TYP (nS) TS4 MAX (nS) Rs @ 75 mA MAX (Ohms) Rs @ 20 mA TYP (Ohms) jc MAX C/W 70 70 100 100 100 200 200 200 .1 .2 .07 .15 .3 .07 .15 .3 60 60 100 100 100 225 225 225 5 5 10 10 15 15 15 15 .7 .5 .9 .6 .45 1.2 .8 .6 1.0 .7 1.5 1.0 .8 2.2 1.0 .7 70 55 80 60 50 80 60 50 Vbr1 MIN (V) Cj-10 V2 MAX (pF) Tl3 TYP (nS) TS4 MAX (nS) Rs5@ 100 mA MAX (Ohms) Rs5@ 20 mA TYP (Ohms) jc MAX C/W 200 200 200 200 200 200 .07 .15 .3 .1 .2 .5 400 400 400 600 600 600 20 20 20 25 25 25 1.5 1.0 .7 1.2 .8 .6 2.2 1.9 1.4 2.0 1.7 1.2 60 50 40 50 40 15 Part Number Control Devices Control Devices: MMN 7000 Series MMN7011 MMN7013 Fast Switching, Low Power 5 5 Part Number MMN7021 MMN7023 MMN7026 MMN7028 MMN7030 MMN7032 MMN7034 MMN7036 Medium Power, General Purpose Part Number MMN7041 MMN7043 MMN7045 MMN7049 MMN7051 MMN7053 Notes: 1. Reverse Breakdown Voltage measured at 10 A. 2. Junction Capacitance measured at -10 volts at 1 MHz. 3. Minority Carrier lifetime measured with IF = 10 mA, IR = 6mA. 4. RF Switching speed measured from 90% to 10% and 10% to 90% transmission. Drive output = +20 mA and -4 volts, 200 mA spike with a rise time of 2 nS. 5. Series Resistance is measured at 1 GHz using transmission loss techniques. Maximum Ratings Operating Temperature Storage Temperature Reverse Breakdown Voltage (Vbr) Junction Capacitance (Cj-10) Switching Speed (Ts) Lifetime (Tl) Chip Thickness -55C to 150C -65C to 200C from 25 volts to 500 volts at 10 A from .07 pF to .5 pF at 10 volts from 1 nS to 25 nS from 10 nS to 2.0 S TYP .004" - .007" thick Continued on next page. MicroMetrics, Inc. 136 Harvey Road, Building C, Londonderry, NH 03053 Voice: 603-641-3800, Fax: 603-641-3500, Internet: www.micrometrics.com, E-mail: serv@micrometrics.com 43