2SD2115(L)/(S)
Silicon NPN Epitaxial Planar
ADE-208-924 (Z)
1st. Edition
Sep. 2000
Application
Low frequency power amplifier
Outline
4
123
4
3
2
11. Base
2. Collector
3. Emitter
4. Collector
DPAK
S Type
L Type
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit
Collector to base voltage VCBO 150 V
Collector to emitter voltage VCEO 60 V
Emitter to base voltage VEBO 5V
Collector current IC2A
Collector peak current IC(peak) 2.5 A
Collector power dissipation PC*118 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
2SD2115(L)/(S)
2
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage V(BR)CBO 150 — — V IC = 1 mA, IE = 0
Collector to emitter breakdown
voltage V(BR)CEO 60 — — V IC = 10 mA, RBE = ∞
Emitter to base breakdown
voltage V(BR)EBO 5——VI
E
= 1 mA, IC = 0
Collector cutoff current ICBO ——10µAV
CB = 100 V, IE = 0
DC current transfer ratio hFE 150 — — VCE = 5 V, IC = 1.5 A*1
Collector to emitter saturation
voltage VCE(sat) — — 0.8 V IC = 1.5 A, IB = 0.05 A*1
Base to emitter saturation
voltage VBE(sat) — — 1.3 V IC = 1.5 A, IB = 0.05 A*1
Fall time tf— — 0.6 µsI
C
= 1.5 A, IB1 = –IB2 = 50 mA
Note: 1. Pulse test.
Maximum Collector Dissipation Curve
30
20
10
0 50 100 150
Case temperature TC (°C)
Collector power dissipation PC (W)
3.0
0.3
1.0
Collector current IC (A)
0.1
0.031103 30 100
Collector to emitter voltage VCE (V)
Ta = 25°C,
1 shot pulse
iC(peak)
IC(max)
PW = 10 ms
1 ms
Area of Safe Operation
DC Operation(T
C
= 25°C)
2SD2115(L)/(S)
3
TC = 25°C
IB = 0
1.0
0.8
0.6
0.4
0.2
0
Collector current IC (A)
2
Collector to emitter voltage VCE (V)
64108
Typical Output Characteristics
0.5 mA
1
1.5
2
2.5
3.5
4.5
4
3
5
1,000
300
30
100
10
0.03 0.1
DC current transfer ratio hFE
0.3
Collector current IC (A)
1.0 3.0
VCE = 5 V
Ta = 25°C
DC Current Transfer Ratio
vs. Collector Current
Collector to Emitter Saturation Voltage
vs. Base Current
10
3.0
1.0
Collector to emitter saturation voltage VCE(sat) (V)
0.3
0.12 10 30 100 200
Base current IB (mA)
Ta = 25°C
IC = 2 A
1.5 A
1 A
Saturation Voltage
vs. Collector Current
10
3
1.0
Collector to emitter saturation voltage VCE(sat) (V)
Base to emitter saturation voltage VBE(sat) (V)
0.3
0.1
0.03
0.01
0.03 0.1 1.0
Collector current IC (A)
0.3 3.0
VBE(sat)
VCE(sat)
IC = 20 IB
Ta = 25°C
2SD2115(L)/(S)
4
Package Dimensions
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
DPAK (L)-(1)
—
Conforms
0.42 g
Unit: mm
6.5 ± 0.5 2.3 ± 0.2
0.55 ± 0.1
1.2 ± 0.3
0.55 ± 0.1
5.5 ± 0.5 1.7 ± 0.5
16.2 ± 0.5
3.1 ± 0.5
5.4 ± 0.5
1.15 ± 0.1
2.29 ± 0.5 2.29 ± 0.5
0.8 ± 0.1
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
DPAK (S)-(1)
—
Conforms
0.28 g
Unit: mm
6.5 ± 0.5
5.4 ± 0.5 2.3 ± 0.2
0.55 ± 0.1
0 – 0.25
0.55 ± 0.1
1.7 ± 0.5
5.5 ± 0.5
2.5 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
1.2 Max
(4.9)
(5.3)
2SD2115(L)/(S)
5
Cautions
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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
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