VOIDLESS-HERMETICALLY-SEALED
SURFACE MOUNT STANDARD
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G
LA
SS
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TIFIER
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WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N5614US thru 1N5622US
1N5614US – 1N5622US
DESCRIPTION APPEARANCE
This “standard recovery” surface mount rectifier diode series is military qualified to MIL-
PRF-19500/427 and is ideal for hig h-reliability applications where a failure cannot be
tolerated. These industry-recogn ized 1.0 Amp rated rectifiers for working peak reverse
voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction
using an internal “Categor y I” metallurgical bond. These devices are also available in
axial-leaded thru-hol e package configurations (see separate data sheet for 1N5614 thru
1N5622). Microsemi also offers numerous other rectifier products to meet hig her and
lower current ratings with various recover y time speed req uirements including fast and
ultrafast device types in both throu gh-hole and surface mount packages.
Package “A”
or D-5A
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES APPLIC ATIONS / BENEFITS
• Surface mount package series equiv ale nt to the
JEDEC registered 1N5614 to 1N5622 series
• Voidless hermetically s ealed glass package
• Triple-Layer Passivation
• Internal “Category I” Metallurgical bonds
• Working Peak Reverse Voltage 200 to 1000 Volts.
• JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/427
• Axial-leaded e quivalents also available (see separate
data sheet for 1N5614 thru 1N5622)
• Standard recovery 1 Amp rectifiers 200 to 1000 V
• Military and other high-reliability applications
• General rectifier applications inclu din g bridges, half-
bridges, catch diodes, etc.
• High forward surge current capability
• Extremely robust construction
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RAT ING S MECHANICAL AND PACKAGING
• Junction & Storage Temperature: -65oC to +200oC
• Thermal Resistance: 13oC/W junction to en d cap
• Thermal Impedance: 4.5oC/W @ 10 ms heating time
• Average Rectified For ward Current (IO): 1.0 Amps @
TA = 55ºC and 0.75 Amps @ TA = 100ºC
• Forward Surge Current: 30 Amps @ 8.3 ms half-sine
• Solder Temperatures: 260ºC for 10 s (maximum)
• CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
• TERMINALS: End caps are Copper with Tin/Lead
(Sn/Pb) finish. Note: Previous inventory had solid
Silver end caps with Tin/Lead (Sn/Pb) finish.
• MARKING & POLARITY: Cathode band only
• TAPE & REEL option: Standard per EIA-481-B
• WEIGHT: 193 mg
• See package dimensions and recommended pad
layout on last page
ELECTRICAL CHARACTERISTICS
TYPE
WORKING
PEAK
REVERSE
VOLTAGE VRWM
MINIMUM
BREAKDOWN
VOLTAGE
VBR @ 50μA
AVERAGE
RECTIFIED
CURRENT
IO @ TA
(NOTE 1)
FORWARD
VOLTAGE
(MAX.)
VF @ 3A
REVERSE
CURRENT
(MAX.)
IR @ VRWM
MAXIMUM
SURGE
CURRENT
IFSM
(NOTE 2)
REVERSE
RECOVERY
(NOTE 3)
trr
VOLTS VOLTS AMPS VOLTS
μA AMPS μs
55oC 100oC 25oC 100oC
1N5614US
1N5616US
1N5618US
1N5620US
1N5622US
200
400
600
800
1000
220
440
660
880
1100
1.00
1.00
1.00
1.00
1.00
.750
.750
.750
.750
.750
0.8 MIN.
1.3 MAX.
0.5
0.5
0.5
0.5
0.5
25
25
25
25
25
30
30
30
30
30
2.0
2.0
2.0
2.0
2.0
NOTE 1: From 1 Amp at TA = 55oC, derate linearly at 5.56 mA/ oC to 0.75 Amp at TA = 100oC. From TA = 100oC,
derate linearly at 7.5 mA/oC to 0 Amps at TA = 200 oC. These ambient ratings are for PC boards where thermal
resistance from mounting point to ambient is sufficiently controll ed where TJ(max) does not exceed 175 oC.
NOTE 2: TA = 100 oC, f = 60 Hz, IO = 750 mA for ten 8.3 ms surges @ 1 minute intervals
NOTE 3: IF = 0.5A, IRM = 1A, IR(REC) = 0.250A
Microsemi
Scottsdale Division Page 1
Copyright © 2009
10-06-2009 REV D; SA7-45.pdf
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
VOIDLESS-HERMETICALLY-SEALED
SURFACE MOUNT STANDARD
RE
CO
VERY
G
LA
SS
RE
C
TIFIER
S
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N5614US thru 1N5622US
1N5614US – 1N5622US
SYMBOLS & DEFINITI ONS
Symbol Definition
VBR Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specifie d current.
VRWM Working Peak Reverse Voltage: The maximum peak voltage that ca n be applied over the operating
temperature range.
VF Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
IR Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
C Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage
trr Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified decay point after a peak rever s e
current occurs.
GRAPHS
FIGURE 1 FIGURE 2
TYPICAL FORWARD VOLTAGE v s FO RWARD CURRENT TYPICAL REVERSE CURRENT vs PIV
Microsemi
Scottsdale Division Page 2
Copyright © 2009
10-06-2009 REV D; SA7-45.pdf
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
VOIDLESS-HERMETICALLY-SEALED
SURFACE MOUNT STANDARD
RE
CO
VERY
G
LA
SS
RE
C
TIFIER
S
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N5614US thru 1N5622US
1N5614US – 1N5622US
PACKAGE DIMENSIONS AND PAD LAYOUT
NOTE: This Package Outline has also previously PAD LAYOUT
been identified as “D-5A” INCHES mm
A 0.246 6.25
B 0.067 1.70
C 0.105 2.67
Note: If mounting requires adhesive
separate from the solder, an additional
0.060 inch diameter contact may be
placed in the center between the pads
as an optional spot for cement.
INCHES mm
MIN MAX MIN MAX
BD .097 .103 2.46 2.62
BL .185 .200 4.70 5.08
ECT .019 .028 0.48 0.71
S .003 --- 0.08 ---
Copyright © 2009
10-06-2009 REV D; SA7-45.pdf
