CGY41
Semiconductor Group 1 of 7 Target DATASHEET
HiRel L- and S-Band GaAs General Purpose Amplifier
• HiRel Discret e and Microwave Semiconductor
• Single-st a ge monolithic m icrowave IC
(MMIC-amplifier )
• Application rang e: 100 MHz to 3 GHz
• Gain: 9.5 dB typ. @ 1.8 GHz
• Low noise figure: 2.7 dB typ. @ 1.8 GHz
• Bandwidth: 3 GHz typ. @ -3 dB, VSWR < 2 : 1 *
Operating voltage range: 3 to 5. 5 V
• Input and output m atched to 50 Ω
• Individual current control with neg. g at e bias
• Hermetically sealed ceramic pack age micro-x
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type Marking Ordering Code Circuit Di agram
(Pin Conf iguration)
Package
CGY41 (q l) - see below Micro-X
(ql) Quality Level: P: Professional Quality, Ordering Code: on request
H: High Rel Quality, Ordering Code: on request
S: Space Quality, Ordering Code: on request
ES: ESA Space Quality, Ordering Code: on request
(see order inst r uctions for or dering example)
12
34
CGY41
Semiconductor Group 2 of 7 Target DATASHEET
Maximum ratings Symbol Value Unit
Drain-voltage VD5.5 V
Gate-voltage VG-4 ... 0 V
Drain-g a t e voltage VDG 9.5 V
RF Input power 1) PRFIN 16 dBm
Channel temperat ure TCh 175 °C
Storag e t em perature range Tstg -55...+175 °C
Total power dissipation ( TS < 82°C) 2) Ptot 440 mW
Thermal resistance
Channel-soldering point 2) RthChS 155 K/W
Notes: Exceeding any of the max. ratings may cause permanent damage to the device. Appropriate
handling is required to protect the electrostatic sensitive MMIC against degradation due to excess
voltage or current spikes. Proper ground connection of leads 2 and 4 ( with min. inductance ) is required
to achieve the guaranteed RF performance, stable operating conditions and adequate cooling.
1) @ VD > 4.5 V derating required.
2) Ts is measured on the source lead at the soldering point to the PCB.
CGY41
Semiconductor Group 3 of 7 Target DATASHEET
Electrical Characteristics
TA = 25 °C, VG = 0 V, VD = 4.5 V, RS = RL = 50 Ω,==unless otherwise specified
(f or applicat ion circuit see next page)
Characteristics Symbol min typ max Unit
Drain current ID40 60 80 mA
Power gain
f = 200 MHz
f = 1800 MHz
G9.5
8.5 10.5
9.5 12
11
dB
Gain f lat ness
f = 200 to 1000 MHz
f = 800 to 1800 MHz
∆
G-
-0.4
1.1 -
2
dB
Noise fig u r e
f = 200 to 1000 MHz
f = 800 to 1800 MHz
F-
-2.5
2.7 -
4.0
dB
Input ret ur n loss
f = 200 to 1000 MHz
f = 800 to 1800 MHz
RLIN -
-13
12 -
9.5
dB
Output return loss
f = 200 to 1000 MHz
f = 800 to 1800 MHz
RLOUT -
-12
12 -
9.5
dB
Third or der intercept point
Two tone interm odulat ion test
f1 = 806 MHz, f2 = 810 MHz
P0 = 10 dBm ( both carriers )
IP3
31 32 -
dBm
1dB gain compression
f = 200 to 1800 MHz
P1 dB -18-
dBm
Gain control dynamic r ange,
(per g ate control voltag e)
f = 200 to 1000 MHz
f = 800 to 1800 MHz
∆
G
-
-
30
20
-
-
dB
CGY41
Semiconductor Group 4 of 7 Target DATASHEET
Application Circuit ( f = 800 to 1800 MHz )
CGY41
50 Ohm M i cros tri
p
line
In
p
ut
50Ohm
Out
p
ut
50Ohm
3
2
VD
1
VG
1
L
C
C3
L2
2
C
C4
4
1
D
L3
Legend of components
C1 , C2
C3 , C4
Chip capacitors 100 pF
Chip capacitors 1 nF
L1For optimized input matching
- discrete induct or : approx. 3nH, or
- printed m icr ost r ipline inductor: Z approx. 100 Ω,
le approx. 5 mm
L2, L3- discrete inductor: appr ox. 40 nH, as e. g. 5 tur ns 0. 25 m m copper
wire on nylon rod with M3-thread, or
- printed m icr ost r ipline inductor
D Z diode 5.6 V ( type BZW 22 C5 V 6 )
CGY41
Semiconductor Group 5 of 7 Target DATASHEET
Total Pow e r Dissipation Ptot = f (TS;TA)
0 0 50 100
150
AS
tot
P
TT;[ °C ]
[ mW ]
A
T
S
T
100
200
300
400
500
CGY41
Semiconductor Group 6 of 7 Target DATASHEET
Order Instructions:
Full type variant including quality level must be specified by the orderer. For HiRel Discrete
and Microwave Semiconductors the ordering code specifies device family and quality level
only.
Ordering Form: Ordering Code: Q..........
CGY41 (ql) (ql) : Quality Level
Ordering Example: tbd
Further Informations :
See our WWW-Pages:
- Discrete and RF- Sem iconductors (Small Signal Semiconductor s)
www.infineon.com/products/discrete/hirel.htm
- HiRel Discrete and Microwave Semiconductors
www.infineon.com/products/discrete/hirel.htm
Please contact also our m ar keting division :
Tel.: ++89 234 24480
Fax.: ++89 234 28438
e-mail: martin.wimmers@infineon.com
Address: Inf ineon T echnologies Semiconductors,
High Frequency Products Marketing,
P.O.Box 801709,
D-81617 Munich
CGY41
Semiconductor Group 7 of 7 Target DATASHEET
Micro-X Package Published by Infineon Technologies Semiconductors, High
Frequency Products Marketing, P.O.Box 801709, D-81617
Munich.
Infineon Technologies AG 1998. All Rights Reserved.
As far as patents or other rights of third parties are concerned,
liability is only assumed for components per se, not for
applications, processes and circuits implemented within
components or assembli es.
The i nform ation describes t he type of component and shall not be
considered as assured characteristics.
Terms of delivery and rights to change desi gn reserve d.
For questions on technology, delivery and prices please contact
the Offi ces of Semiconductor Group i n Germany or the Infi neon
Technologies Companies and Representatives woldwide (see
address list).
Due to technical requirements components may contain
dangerous substances. For information on the type in question
please contact your nearest Infineon Technologies Office,
Semiconductor Group.
Infineon T echnologies Semiconductors is a certifi ed CECC and
QS9000 manufacturer (this i ncludes ISO 9000).
