2-INPUT AND GATE The TC7S08 is a high speed C?7MOS 2-INPUT AND GATE fabricated with silicon gate C?MOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining the C?MOS low power dissipation. The internal circuit is composed of 2 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge or transient excess voltage. Output currents are 1/2 compared to TC74HC series models. FEATURES @ High Speed ....................2.. tod =7ns (Typ.) at cc=5V @ Low Power Dissipation ............ Icc = 1A (Max.) at Ta=25C High Noise Immunity ............. VNIH = VNIL =28% Vcc (Min.) Output Drive Capability 5 LSTTL Loads TC7SO8F, 1C7SO08FU TC7S08F is SSOPS5-P TC7SO8FU eee aes SSOP5-P-A Symmetrical Output Impedance lloHI =!oL. Weight SSOP5-P__: 0.016g (Typ.) =2mA (Min.) SSOP5-P-A : 0.006g (Typ.) Balanced Propagation Delays ...... tpLH=tpHL @ Wide Operating Voltage Range Vcc (opr) = 2~6V MAXIMUM RATINGS MARKING CHARACTERISTIC SYMBOL RATING UNIT 4 Supply Voltage Range Vec -0.5~7 Vv a, 4 DC Input Voltage VIN -0.5~Vcc +05] V E2 DC Output Voltage VoUT -0.5~Vcec +05] V Hee Input Diode Current ik +20 mA Output Diode Current lox +20 mA PIN ASSIGNMENT (TOP VIEW) Dc Output Current lOUT $12.5 mA ine DI Te] vec DC Vcc/Ground Current lec +25 mA Power Dissipation Pp 200 mw in ABT Storage Temperature Tstg -65~150 C Lead Temperature (10s) TL 260 C GND [2] our Y 89 TOSHIBA CORPORATION aA pIA___<__=__.|ljawma&a_,_[|_ LOGIC DIAGRAM (1) IN a (2) & Nh 4) our y RECOMMENDED OPERATING CONDITIONS CHARACTERISTIC SYMBOL RATING UNIT Supply Voltage Vcc 2~6 V Input Voltage VIN 0~Vcc Vv Output Voltage VOUT 0~Vcc V Operating Temperature Topr -40~85 C 0~ 1000 (Vcc =2.0V) input Rise and Fall Time tr, tf O~ 500 (Vcc =4.5V)| ns O~ 400 (Vcc =6.0V) DC ELECTRICAL CHARACTERISTICS CHARACTERISTIC |SYMBOL TEST CONDITION Tas2stC [Tas = 80 89C) ayy Vcc [MIN.| TYP. [MAX.| MIN. [ MAX. ah-Level 20; 15) )]/] 15] Ingt Voltage Vin _ 45 (3.15) | ] 315] | v 60] 42{||] 42] 20, | | os} 05 Low-Level ViL 45] | [135] | 135] v input Voltage 60| | 18| 18 20} 19] 20; | 19| tiqh-Level lon= -20n4 [45] 44] 45] | 44a] Output Voltage VoH |[VIN=VIH 6.0} 5:9] 6.0] 29 V lon=-2mA | 45] 4.18}431| | 4.13 | loy= -2.6mA | 6.0 |5.68]5.80| | 5.63 | 20; | oof orf 01 lo, = 204A 45} | oo] o1| 0.1 Low-Level VoL Vin =VIH OL M 60 | oo! o1| 0.1 V Output Voltage or VIL lol =2mA 45| |o17}o26| | 033 lo, =2.6mA 6.0 | }o.18| 0.26] | 033 input Leakage lin {Vins Vcc or GND 60} | |to1| | +10 . Lu supply Current tcc |Vin=Vcc or GND 60} | | 10} | 100 Output currents are 1/2 compared to TC74HC series models. TOSHIBA CORPORATION 90 - TC7S08F,TC7S08FU AC ELECTRICAL CHARACTERISTICS (C; = 15pF, Input tp=t=6ns, Vcc =5V) CHARACTERISTIC SYMBOL TEST CONDITION Ta = 25C UNIT MIN. | TYP. |MAX. 0 utput Transition tTLH _ _ 5 10 ns Time THLE 5 - ropagation Delay toLH _ 7 15 ns Time toHL AC ELECTRICAL CHARACTERISTICS (C; =50pF, Input ty =t=6ns) = 25 = 40~85C CHARACTERISTIC | SYMBOL TEST CONDITION Ta= ase Ta UNIT. Vcc | MIN. | TYP. |MAX.| MIN. | MAX. a: 2.00) | 50 | 125 155 vutput Transition TH _ 45 | 14 25 _ 31 ns THE 60] | 12] aa} 26 Propagation Dela 2.0) | 48 | 100) 128 Tine y jou _ 45 | | 12] 20] 25 | ns pHE 6o| | 9] 17] 21 Input Capacitance CiN _ _ 5 10 _ 10 Power Dissipation pF Capacitance Cep | (Note 1) ] 1 | ~ Note 1: Cpp defined as the value of internal equivalent capacitance of IC which is calculated from the operating current consumption without load (refer to Test Circuit). Average operating current can be obtained by the equation hereunder. Iec (opr) = Cpo-Vec'fin +!oc SWITCHING CHARACTERISTICS TEST CIRCUIT ICC (opr) TEST CIRCUIT TS, ns =| 90% Vcc VIN K 50% Vec=5V xe Gn tTLH tTHL 90% VOH VouT 50% 10% Name VOL Input waveform is the same as that in tpLH tpHL case of switching characteristics test. TOSHIBA CORPORATION 91