STGFW40V60DF, STGW40V60DF, STGWT40V60DF Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features * Maximum junction temperature: TJ = 175 C 1 * Tail-less switching off * VCE(sat) = 1.8 V (typ.) @ IC = 40 A 3 2 * Tight parameters distribution 1 TO-3PF TAB * Safe paralleling * Low thermal resistance * Very fast soft recovery antiparallel diode 2 3 3 2 1 1 TO-3P TO-247 Applications * Photovoltaic inverters Figure 1. Internal schematic diagram * Uninterruptible power supply * Welding C (2, TAB) * Power factor correction * Very high frequency converters Description G (1) This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. E (3) Table 1. Device summary Order code Marking Package Packaging STGFW40V60DF GFW40V60DF TO-3PF Tube STGW40V60DF GW40V60DF TO-247 Tube STGWT40V60DF GWT40V60DF TO-3P Tube April 2014 This is information on a product in full production. DocID024402 Rev 8 1/21 www.st.com 21 Contents STGFW40V60DF, STGW40V60DF, STGWT40V60DF Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) .......................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 5 2/21 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.1 TO-3PF, STGFW40V60DF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.2 TO-247, STGW40V60DF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.3 TO-3P, STGWT40V60DF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 DocID024402 Rev 8 STGFW40V60DF, STGW40V60DF, STGWT40V60DF 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-247 TO-3PF TO-3P Collector-emitter voltage (VGE = 0) 600 V IC Continuous collector current at TC = 25 C 80 A IC Continuous collector current at TC = 100 C 40 A ICP Pulsed collector current 160 A VGE Gate-emitter voltage 20 V IF Continuous forward current at TC = 25 C 80 A IF Continuous forward current at TC = 100 C 40 A Pulsed forward current 160 A VCES (1) IFP (1) PTOT Total dissipation at TC = 25 C VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; Tc = 25 C) TSTG Storage temperature range - 55 to 150 C Operating junction temperature - 55 to 175 C TJ 283 62.5 W 3.5 kV 1. Pulse width limited by maximum junction temperature Table 3. Thermal data Value Symbol Parameter Unit TO-247 TO-3PF TO-3P RthJC Thermal resistance junction-case IGBT RthJC Thermal resistance junction-case diode RthJA Thermal resistance junction-ambient DocID024402 Rev 8 0.53 2.4 C/W 1.14 C/W 50 C/W 3/21 Electrical characteristics 2 STGFW40V60DF, STGW40V60DF, STGWT40V60DF Electrical characteristics TJ = 25 C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. VF Unit V 1.8 VGE = 15 V, IC = 40 A Collector-emitter saturation TJ = 125 C voltage VGE = 15 V, IC = 40 A TJ = 175 C Forward on-voltage Max. 600 VGE = 15 V, IC = 40 A VCE(sat) Typ. 2.3 2.15 V 2.35 IF = 40 A 1.7 IF = 40 A, TJ = 125 C 1.4 V IF = 40 A, TJ = 175 C 1.3 V VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) 5 6 2.45 V 7 V VCE = 600 V 25 A VGE = 20 V 250 nA Table 5. Dynamic characteristics Symbol 4/21 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 VCC = 480 V, IC = 40 A, VGE = 15 V, see Figure 34 Qge Gate-emitter charge Qgc Gate-collector charge DocID024402 Rev 8 Min. Typ. Max. Unit - 5400 - pF - 220 - pF - 180 - pF - 226 - nC - 38 - nC - 95 - nC STGFW40V60DF, STGW40V60DF, STGWT40V60DF Electrical characteristics Table 6. IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Test conditions Min. Typ. Max. Unit Turn-on delay time - 52 - ns Current rise time - 17 - ns - 1850 - A/s - 208 - ns - 20 - ns Turn-on current slope VCE = 400 V, IC = 40 A, RG = 10 , VGE = 15 V, see Figure 33 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 456 - J Eoff(2) Turn-off switching losses - 411 - J Total switching losses - 867 - J Turn-on delay time - 52 - ns Current rise time - 21 - ns Turn-on current slope - 1538 - A/s - 220 - ns - 21 - ns Ets td(on) tr (di/dt)on td(off) tf VCE = 400 V, IC = 40 A, RG = 10 , VGE = 15 V, TJ = 175 C, see Figure 33 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 1330 - J Eoff(2) Turn-off switching losses - 560 - J Total switching losses - 1890 - J Ets 1. Parameter Energy losses include reverse recovery of the diode. 2. Turn-off losses include also the tail of the collector current. Table 7. Diode switching characteristics (inductive load) Symbol Parameter Test conditions trr Reverse recovery time Qrr Reverse recovery charge IF = 40 A, VR = 400 V, VGE = 15 V, di/dt=1000 A/s see Figure 33 Min. Typ. Max. Unit - 41 - ns - 440 - nC - 21.6 - A - 1363 - A/s Irrm Reverse recovery current dIrr/ /dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy - 151 - J trr Reverse recovery time - 109 - ns Qrr Reverse recovery charge - 2400 - nC - 44.4 - A - 670 - A/s - 718 - J Irrm Reverse recovery current dIrr/ /dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy IF = 40 A, VR = 400 V, VGE = 15 V, di/dt=1000 A/s TJ = 175 C, see Figure 33 DocID024402 Rev 8 5/21 Electrical characteristics 2.1 STGFW40V60DF, STGW40V60DF, STGWT40V60DF Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature for TO-247 and TO-3P AM17385v1 Ptot (W) Figure 3. Collector current vs. case temperature for TO-247 and TO-3P AM17386v1 IC (A) VGE= 15 V, TJ= 175 C VGE= 15 V, TJ= 175 C 80 250 70 60 200 50 150 40 30 100 20 50 0 0 10 25 50 0 0 75 100 125 150 175 TC(C) Figure 4. Power dissipation vs. case temperature for TO-3PF AM17385v4 Ptot (W) 50 25 40 20 30 15 20 10 10 5 75 100 125 150 AM17387v1 VGE=15V 0 0 TC(C) Figure 6. Output characteristics (TJ=25C) IC (A) TC(C) AM17386v5 VGE= 15 V, TJ= 175 C 30 50 75 100 125 150 175 IC (A) VGE= 15 V, TJ= 175 C 25 50 Figure 5. Collector current vs. case temperature for TO-3PF 60 0 0 25 50 25 75 100 125 150 175 Figure 7. Output characteristics (TJ=175C) AM17388v1 IC (A) VGE=15V 13V 140 TC(C) 140 11V 13V 120 120 9V 100 11V 100 9V 80 80 60 60 40 40 20 20 0 0 6/21 1 2 3 4 VCE(V) DocID024402 Rev 8 0 0 7V 1 2 3 4 VCE(V) STGFW40V60DF, STGW40V60DF, STGWT40V60DF Figure 8. VCE(sat) vs. junction temperature Electrical characteristics Figure 9. VCE(sat) vs. collector current AM17389v1 VCE(sat) (V) IC=80A VGE=15V AM17390v1 VCE(sat) (V) 2.8 3.0 2.6 2.8 IC=40A Tj=175C VGE=15V Tj=25C 2.6 2.4 2.4 2.2 2.2 2.0 IC=20A 1.8 2.0 1.8 1.6 Tj=-40C 1.6 1.4 1.2 -50 0 100 50 150 TJ(C) Figure 10. Collector current vs. switching frequency for TO-247 and TO-3P 1.4 1.2 10 20 40 30 50 60 AM17391v3 IC (A) 90 45 TC=80C 80 70 35 TC=100C 30 50 25 40 20 30 15 10 0 1 TC=80C 40 60 20 80 IC(A) Figure 11. Collector current vs. switching frequency for TO-3PF AM17391v1 IC (A) 70 10 rectangular current shape, (duty cycle=0.5, Vcc= 400V Rg=10, Vge=0/15V, Tj=175 C) rectangular current shape, (duty cycle=0.5, Vcc= 400V Rg=10, Vge=0/15V, Tj=175 C) 5 0 f(kHz) 10 TC=100C f(kHz) 10 1 Figure 12. Forward bias safe operating area for Figure 13. Forward bias safe operating area for TO-247 and TO-3P TO-3PF AM17392v1 IC (A) AM17392v6 IC (A) 100 100 10s 10 100s 1ms 10 10s 1 0.1 0.01 1 100s Single pulse, Tc=25C Tj<175C, VGE=15V 10 100 1 VCE(V) 0.1 1 DocID024402 Rev 8 Single pulse, Tc=25C Tj<175C, VGE=15V 10 100 1ms VCE(V) 7/21 Electrical characteristics STGFW40V60DF, STGW40V60DF, STGWT40V60DF Figure 14. Transfer characteristics Figure 15. Diode VF vs. forward current AM17393v1 IC (A) 160 Tj=-40C AM17394v1 VF(V) Tj=-40C 2.4 Tj=175C 140 Tj=25C Tj=25C 120 2.0 100 Tj=175C 80 1.6 VCE= 5V 60 40 1.2 20 0 6 VGE(V) 10 8 Figure 16. Normalized VGE(th) vs junction temperature AM17395v1 VGE(th) (norm) VCE=VGE IC=1mA 0.8 10 30 20 40 50 60 70 80 IF(A) Figure 17. Normalized V(BR)CES vs. junction temperature AM17396v1 V(BR)CES (norm) IC=2mA 1.1 1.0 1.05 0.9 1.0 0.8 0.95 0.7 0.6 -50 50 0 100 150 TJ(C) Figure 18. Capacitance variations 10000 0 100 50 150 TJ(C) Figure 19. Gate charge vs. gate-emitter voltage AM17397v1 C(pF) 0.9 -50 16 Cies AM17398v1 VGE(V) VCC= 480 V IC= 40 A 14 12 1000 10 8 Cres Coes 6 100 4 2 10 0.1 8/21 1 10 VCE(V) DocID024402 Rev 8 0 0 50 100 150 200 250 Qg(nC) STGFW40V60DF, STGW40V60DF, STGWT40V60DF Figure 20. Switching losses vs. collector current AM17399v1 E(J) Eon VCC=400V, VGE=15V Rg=10, Tj=175C 2800 2400 Electrical characteristics Figure 21. Switching losses vs. gate resistance AM17400v1 E(J) VCC=400V, VGE=15V IC=40A, Tj=175C 2300 Eon 1900 2000 1500 1600 Eoff 1200 Eoff 1100 800 700 400 300 0 0 40 20 60 IC(A) 80 Figure 22. Switching losses vs. junction temperature AM17401v1 E(J) Eon VCC=400V, VGE=15V IC=40A, Rg=10 1300 10 0 20 30 40 Rg() Figure 23. Switching losses vs. collector emitter voltage AM17402v1 E(J) 1600 Eon VGE=15V, Tj=175C IC=40A, Rg=10 1400 1100 1200 900 1000 800 700 Eoff 600 Eoff 500 400 300 25 50 75 100 125 150 TJ(C) Figure 24. Switching times vs. collector current AM17403v1 t(ns) VCC=400V,VGE=15V 200 150 250 300 350 400 450 VCE(V) Figure 25. Switching times vs. gate resistance AM17404v1 t(ns) Tj=175C, Rg=10 tdoff 200 1000 100 VCC=400V VGE=15V Tj=175C IC=40A tdoff tdon tdon 100 tf tr tf 10 0 20 40 60 80 IC(A) 10 0 DocID024402 Rev 8 tr 10 20 30 40 Rg() 9/21 Electrical characteristics STGFW40V60DF, STGW40V60DF, STGWT40V60DF Figure 26. Reverse recovery current vs. diode current slope AM17405v1 Irm(A) Vr=400V IF=40A 90 Tj=175C Figure 27. Reverse recovery time vs. diode current slope AM17406v1 trr(s) Vr=400V IF=40A 250 80 70 200 60 Tj=25C 150 50 40 Tj=175C 100 30 20 50 Tj=25C 10 0 0 500 1000 Figure 28. Reverse recovery charge vs. diode current slope AM17407v1 Qrr(nC) Vr=400V IF=40A 3000 0 0 1500 2000 2500 di/dt (A/s) Tj=175C 500 1000 1500 2000 2500 di/dt (A/s) Figure 29. Reverse recovery energy vs. diode current slope AM17408v1 Err(J) Vr=400V IF=40A 1600 Tj=175C 1400 2500 1200 2000 1000 1500 800 Tj=25C 600 Tj=25C 1000 400 500 0 0 10/21 200 500 1000 1500 2000 2500 di/dt (A/s) DocID024402 Rev 8 0 0 500 1000 1500 2000 2500 di/dt (A/s) STGFW40V60DF, STGW40V60DF, STGWT40V60DF Electrical characteristics Figure 30. Thermal data for IGBT in TO-247 and TO-3P ZthTO2T_B K =0.5 0.2 0.1 0.05 -1 10 0.02 Zth=k Rthj-c =tp/t 0.01 Single pulse tp t -2 10 -5 10 -4 -2 -3 10 -1 10 10 tp (s) 10 Figure 31. Thermal data for IGBT in TO-3PF ZthTOF3T_A K =0.5 0.2 0.1 0.05 -1 10 0.02 Zth=k Rthj-c =tp/t 0.01 Single pulse tp t -2 10 -5 10 -4 10 -3 10 -2 10 DocID024402 Rev 8 -1 10 0 10 tp (s) 11/21 Electrical characteristics STGFW40V60DF, STGW40V60DF, STGWT40V60DF Figure 32. Thermal data for diode 12/21 DocID024402 Rev 8 STGFW40V60DF, STGW40V60DF, STGWT40V60DF 3 Test circuits Test circuits Figure 33. Test circuit for inductive load switching Figure 34. Gate charge test circuit AM01504v1 Figure 35. Switching waveform AM01505v1 Figure 36. Diode recovery time waveform VG IF trr 90% VCE Qrr di/dt 90% 10% ta tb 10% Tr(Voff) t Tcross 90% IRRM IRRM IC 10% Td(off) Td(on) Tr(Ion) Ton Tf Toff VF dv/dt AM01506v1 DocID024402 Rev 8 AM01507v1 13/21 Package mechanical data 4 STGFW40V60DF, STGW40V60DF, STGWT40V60DF Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-3PF, STGFW40V60DF Figure 37. TO-3PF drawing 7627132_D 14/21 DocID024402 Rev 8 STGFW40V60DF, STGW40V60DF, STGWT40V60DF Package mechanical data Table 8. TO-3PF mechanical data mm Dim. Min. Typ. Max. A 5.30 5.70 C 2.80 3.20 D 3.10 3.50 D1 1.80 2.20 E 0.80 1.10 F 0.65 0.95 F2 1.80 2.20 G 10.30 11.50 G1 5.45 H 15.30 15.70 L 9.80 L2 22.80 23.20 L3 26.30 26.70 L4 43.20 44.40 L5 4.30 4.70 L6 24.30 24.70 L7 14.60 15 N 1.80 2.20 R 3.80 4.20 Dia 3.40 3.80 10 DocID024402 Rev 8 10.20 15/21 Package mechanical data 4.2 STGFW40V60DF, STGW40V60DF, STGWT40V60DF TO-247, STGW40V60DF Figure 38. TO-247 drawing 0075325_G 16/21 DocID024402 Rev 8 STGFW40V60DF, STGW40V60DF, STGWT40V60DF Package mechanical data Table 9. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 5.60 18.50 P 3.55 3.65 R 4.50 5.50 S 5.30 5.50 DocID024402 Rev 8 5.70 17/21 Package mechanical data 4.3 STGFW40V60DF, STGW40V60DF, STGWT40V60DF TO-3P, STGWT40V60DF Figure 39. TO-3P drawing 8045950_A 18/21 DocID024402 Rev 8 STGFW40V60DF, STGW40V60DF, STGWT40V60DF Package mechanical data Table 10. TO-3P mechanical data mm Dim. Min. Typ. Max. A 4.60 5 A1 1.45 1.50 1.65 A2 1.20 1.40 1.60 b 0.80 1 1.20 b1 1.80 2.20 b2 2.80 3.20 c 0.55 0.60 0.75 D 19.70 19.90 20.10 D1 E 13.90 15.40 15.80 E1 13.60 E2 9.60 e 5.15 5.45 5.75 L 19.50 20 20.50 L1 3.50 L2 18.20 oP 3.10 18.40 18.60 3.30 Q 5 Q1 3.80 DocID024402 Rev 8 19/21 Revision history 5 STGFW40V60DF, STGW40V60DF, STGWT40V60DF Revision history Table 11. Document revision history Date Revision 20-Mar-2013 1 Initial release. 17-Apr-2013 2 Document status promoted from preliminary data to production data. Added: Section 2.1: Electrical characteristics (curves) 04-Jun-2013 3 Added minimum and maximum values for VGE(th) in Table 4: Static characteristics. 11-Sep-2013 4 Updated VF value in Table 4: Static characteristics. 08-Oct-2013 5 Updated title, features and description in cover page. 10-Jan-2014 6 Updated Figure 8: VCE(sat) vs. junction temperature, Figure 15: Diode VF vs. forward current and Figure 16: Normalized VGE(th) vs junction temperature. 03-Mar-2014 7 Updated test conditions in Table 7: Diode switching characteristics (inductive load). 8 Added new device in TO-3PF. Updated Table 1: Device summary, Table 2: Absolute maximum ratings Table 3: Thermal data and Section 4: Package mechanical data. Added Figure 4: Power dissipation vs. case temperature for TO-3PF, Figure 5: Collector current vs. case temperature for TO-3PF, Figure 11: Collector current vs. switching frequency for TO-3PF and Figure 12: Forward bias safe operating area for TO-247 and TO-3P. Minor text changes. 23-Apr-2014 20/21 Changes DocID024402 Rev 8 STGFW40V60DF, STGW40V60DF, STGWT40V60DF Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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