This is information on a product in full production.
April 2014 DocID024402 Rev 8 1/21
21
STGFW40V60DF, STGW40V60DF,
STGWT40V60DF
Trench gate field-stop IGBT, V series
600 V, 40 A very high speed
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
•Maximum junction temperature: T
J
= 175 °C
•Tail-less switching off
•V
CE(sat)
= 1.8 V (typ.) @ I
C
= 40 A
•Tight parameters distribution
•Safe paralleling
•Low thermal resistance
•Very fast soft recovery antiparallel diode
Applications
•Photovoltaic inverters
•Uninterrup tib le powe r suppl y
•Welding
•Power factor correction
•Very high frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is p art of the V series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive V
CE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
TO-3PF
TO-3P
12
3
TAB
111
123
TO-247
1
23
C (2, TAB)
E (3)
G (1)
Table 1. Device summary
Order code Marking Package Packaging
STGFW40V60DF GFW40V60DF TO-3PF Tube
STGW40V60DF GW40V60DF TO-247 Tube
STGWT40V60DF GWT40V60DF TO-3P Tube
www.st.com
Contents STGFW40V60DF, STGW40V60DF, STGWT40V60DF
2/21 DocID024402 Rev 8
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.1 TO-3PF, STGFW40V60DF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.2 TO-247, STGW40V60DF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.3 T O-3P, STGWT40V60DF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
DocID024402 Rev 8 3/21
STGFW40V60DF, STGW40V60DF, STGWT40V60DF Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-247
TO-3P TO-3PF
V
CES
Collector-emitter voltage (V
GE
= 0) 600 V
I
C
Continuous collector current at T
C
= 25 °C 80 A
I
C
Continuous collector current at T
C
= 100 °C 40 A
I
CP(1)
1. Pulse width limited by maximum junction temperature
Pulsed collector current 160 A
V
GE
Gate-emitter voltage ±20 V
I
F
Contin uous forward c urrent at T
C
= 25 °C 80 A
I
F
Contin uous forward c urrent at T
C
= 100 °C 40 A
I
FP(1)
Pulsed forward current 160 A
P
TOT
Total dissipation at T
C
= 25 °C 283 62.5 W
V
ISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t = 1 s; Tc = 25 °C) 3.5 kV
T
STG
Storage temperature range - 55 to 150 °C
T
J
Operating junction temperature - 55 to 175 °C
Table 3. Thermal data
Symbol Parameter
Value
Unit
TO-247
TO-3P TO-3PF
R
thJC
Thermal resistance juncti on -ca se IG BT 0.53 2.4 °C/W
R
thJC
Thermal resistance jun ction -case diode 1.14 °C/W
R
thJA
Thermal resistance junction-ambient 50 °C/W
Electrical characteristics STGFW40V60DF, STGW40V60DF, STGWT40V60DF
4/21 DocID024402 Rev 8
2 Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)CES
Collector-emitter
breakdown voltage
(V
GE
= 0) I
C
= 2 mA 600 V
V
CE(sat)
Collect or-emitter sat uration
voltage
V
GE
= 15 V, I
C
= 40 A 1.8 2.3
V
V
GE
= 15 V, I
C
= 40 A
T
J
= 125 °C 2.15
V
GE
= 15 V, I
C
= 40 A
T
J
= 175 °C 2.35
V
F
Forward on-voltage
I
F
= 40 A 1.7 2.45 V
I
F
= 40 A, T
J
= 125 °C 1.4 V
I
F
= 40 A, T
J
= 175 °C 1.3 V
V
GE(th)
Gate threshold voltage V
CE
= V
GE
, I
C
= 1 mA 5 6 7 V
I
CES
Collector cut-off current
(V
GE
= 0) V
CE
= 600 V 25 µA
I
GES
Gate-emitter leakage
current (V
CE
= 0) V
GE
= ± 20 V 250 nA
Table 5. Dynamic characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
ies
Input cap ac itance
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
-5400- pF
C
oes
Output capacitance - 220 - pF
C
res
Reverse transfer
capacitance -180-pF
Q
g
Total gate charge V
CC
= 480 V, I
C
= 40 A,
V
GE
= 15 V, see Figure 34
-226-nC
Q
ge
Gate-emitter charge - 38 - nC
Q
gc
Gate- collector charge - 95 - nC
DocID024402 Rev 8 5/21
STGFW40V60DF, STGW40V60DF, STGWT40V60DF Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 40 A,
R
G
= 10 Ω, V
GE
= 15 V,
see Figure 33
-52-ns
t
r
Current rise time - 17 - ns
(di/dt)
on
Turn-on current slope - 1850 - A/µs
t
d
(
off
) Turn-off delay time - 208 - ns
t
f
Current fall time - 20 - ns
E
on(1)
1. Energy losses include reverse recovery of the diode.
Turn- on switching loss es - 456 - µJ
E
off(2)
2. Turn-off losses include also the tail of the collector current.
Turn-off switching losses - 411 - µJ
E
ts
Total switching losses - 867 - µJ
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 40 A,
R
G
= 10 Ω, V
GE
= 15 V,
T
J
= 175 °C, see Figure 33
-52-ns
t
r
Current rise time - 21 - ns
(di/dt)
on
Turn-on current slope - 1538 - A/µs
t
d
(
off
) Turn-off delay time - 220 - ns
t
f
Current fall time - 21 - ns
E
on(1)
Turn- on switching loss es - 1330 - µJ
E
off(2)
Turn-off switching losses - 560 - µJ
E
ts
Total switching losses - 1890 - µJ
Table 7. Diode switchin g characteristics (ind ucti ve load)
Symbol Parameter Test conditions Min. Typ. Max. U nit
t
rr
Reverse recovery time
I
F
= 40 A, V
R
= 400 V,
V
GE
= 15 V, di/dt=1000 A/µs
see Figure 33
-41-ns
Q
rr
Reverse recovery charge - 440 - nC
I
rrm
Reverse recovery current - 21.6 - A
dI
rr/
/dt Peak rate of fall of reverse
recovery current during t
b
-1363-A/µs
E
rr
Reverse recovery energy - 151 - µJ
t
rr
Reverse recovery time
I
F
= 40 A, V
R
= 400 V,
V
GE
= 15 V, di/dt=1000 A/µs
T
J
= 175 °C, see Figure 33
- 109 - ns
Q
rr
Reverse recovery charge - 2400 - nC
I
rrm
Reverse recovery current - 44.4 - A
dI
rr/
/dt Peak rate of fall of reverse
recovery current during t
b
- 670 - A/µs
E
rr
Reverse recovery energy - 718 - µJ
Electrical characteristics STGFW40V60DF, STGW40V60DF, STGWT40V60DF
6/21 DocID024402 Rev 8
2.1 Electrical characteristics (c urves)
Figure 2. Power dissipation vs. case
temperature for TO-247 and TO-3P Figure 3. Collector current vs. case temperature
for TO-247 and TO-3P
Figure 4. Power dissipation vs. case
temperature for TO-3PF Figure 5. Collector current vs. case temperature
for TO-3PF
Figure 6. Output characteristics (T
J
=25°C) Figure 7. Output characteristics (T
J
=175°C)
P
tot
150
100
50
0
050 100
(W)
25 75 125
200
250
150 175 T
C
(°C)
V
GE
= 15 V, T
J
= 175 °C
AM17385v1
I
C
30
20
10
0
050 T
C
(°C)
100
(A)
25 75 125
40
50
150 175
60
70
80 V
GE
= 15 V, T
J
= 175 °C
AM17386v1
P
tot
30
20
10
0
050 100
(W)
25 75 125
40
50
150 T
C
(°C)
60 V
GE
= 15 V, T
J
= 175 °C
AM17385v4
I
C
15
10
5
0
050 T
C
(°C)
100
(A)
25 75 125
20
25
150
30
175
V
GE
= 15 V, T
J
= 175 °C
AM17386v5
I
C
80
60
20
0
013
(A)
24
100
120
V
CE
(V)
40
140
9V
11V
13V
VGE=15V
AM17387v1
I
C
80
60
20
0
013
(A)
24
100
120
V
CE
(V)
40
140
9V
11V
13V
7V
VGE=15V
AM17388v1
DocID024402 Rev 8 7/21
STGFW40V60DF, STGW40V60DF, STGWT40V60DF Electrical characteristics
Figure 8. V
CE(sat)
vs. junction temperature Figure 9. V
CE(sat)
vs. collector current
Figure 10. Collect or current vs. switching
frequency for TO-247 and TO-3P Figure 11. Collector current vs. switching
frequency for TO-3PF
Figure 12. Forward bias safe opera ting area for
TO-247 and TO-3P Figure 13. Forward bias safe op erating area f or
TO-3PF
V
CE(sat)
2.0
1.8
1.4
1.2
-50 0100
(V)
50 150
2.2
2.4
T
J
(°C)
1.6
2.6
2.8
V
GE
=15V I
C
=80A
I
C
=40A
I
C
=20A
AM17389v1
2.0
1.8
1.4
1.2
10 20 40
30 50
2.2
2.4
I
C
(A)
1.6
2.6
2.8
V
GE
=15V T
j
=175°C
T
j
=25°C
T
j
=-40°C
70
60 80
V
CE(sat)
(V)
3.0
AM17390v1
I
C
40
30
10
0
1
(A)
10
50
60
f(kHz)
20
70
80
T
C
=80°C
T
C
=100°C
rectangular current shape,
(duty cycle=0.5, Vcc= 400V Rg=10Ω,
Vge=0/15V
, Tj=175 °C)
90
AM17391v1
I
C
20
15
5
0
1
(A)
10
25
30
f(kHz)
10
35
40
T
C
=80°C
T
C
=100°C
rectangular current shape,
(duty cycle=0.5, Vcc= 400V Rg=10Ω,
Vge=0/15V
, Tj=175 °C)
45
AM17391v3
I
C
100
10
0.1
0.01
1
(A)
10 VCE(V)
1
10μs
100μs
1ms
100
Single pulse, Tc=25°C
Tj<175°C, VGE=15V
AM17392v1
I
C
100
10
0.1
1
(A)
10 VCE(V)
1
10μs
100μs
1ms
100
Single pulse, Tc=25°C
Tj<175°C, VGE=15V
AM17392v6
Electrical characteristics STGFW40V60DF, STGW40V60DF, STGWT40V60DF
8/21 DocID024402 Rev 8
Figure 14. Transfer characteristics Figure 15. Diode V
F
vs. forward current
Figure 16. Normalized V
GE(th)
vs junction
temperature Fig ure 17. Normali ze d V
(BR)CES
vs. junction
temperature
Figure 18. Capacitance variations Figure 19. Gate charge vs. gate-emitter voltage
I
C
80
60
20
0
6
(A)
8VGE(V)
40
Tj=175°C
Tj=25°C
Tj=-40°C
10
140
120
100
160
VCE= 5V
AM17393v1
V
F
1.6
0.8
10
(V)
20 IF(A)
1.2
Tj=175°C
Tj=25°C
Tj=-40°C
30
2.0
2.4
40 50 60 70 80
AM17394v1
V
GE(th)
0.8
0.6
-50
(norm)
TJ(°C)
0.7
0
0.9
1.0
50 100 150
VCE=VGE
IC=1mA
AM17395v1
V
(BR)CES
1.1
0.9
-50
(norm)
TJ(°C)
1.0
050 100 150
0.95
1.05
I
C
=2mA
AM17396v1
C(pF)
10
0.1 VCE(V)
1000
110
100
10000 Cies
Coes
Cres
AM17397v1
VGE(V)
0
0Qg(nC)
50 100
2
150 200 250
4
6
8
10
12
14
16 V
CC
= 480 V
I
C
= 40 A
AM17398v1
DocID024402 Rev 8 9/21
STGFW40V60DF, STGW40V60DF, STGWT40V60DF Electrical characteristics
Figure 20. Switching losses vs. collector
current Figure 21. Switching losses vs. gate resistance
Figure 22. Switching losses vs. junction
temperature F igure 23. Switch ing losses vs. co llec tor
emitter voltage
Figure 24. Switching times vs. collector current Figure 25. Switching times vs. gate resist ance
E(μJ)
0
0IC(A)
800
20 40
400
1200
60 80
VCC=400V, VGE=15V
Rg=10Ω, Tj=175°C
1600
2000
2400
2800
Eon
Eoff
AM17399v1
E(μJ)
0Rg(Ω)
700
10 20
300
1100
30 40
VCC=400V, VGE=15V
IC=40A, Tj=175°C
1500
1900
2300 Eon
Eoff
AM17400v1
E(μJ)
25 TJ(°C)
500
50 75
300
700
100 125
VCC=400V, VGE=15V
IC=40A, Rg=10Ω
900
1100
1300 Eon
Eoff
150
AM17401v1
E(μJ)
150 VCE(V)
600
200 250
200
1000
300 350
VGE=15V, Tj=175°C
IC=40A, Rg=10Ω
Eon
Eoff
400
800
1200
400 450
1400
1600
AM17402v1
t(ns)
0IC(A)
20 40
10
60 80
VCC=400V,
Tj=175°C,
VGE=15V
Rg=10Ω
tdoff
tdon
100
tr
tf
AM17403v1
t(ns)
0Rg(Ω)
10 20
10
30 40
VCC=400V
Tj=175°C
VGE=15V
IC=40A
tdoff
tdon
100
tr
tf
1000
AM17404v1
Electrical characteristics STGFW40V60DF, STGW40V60DF, STGWT40V60DF
10/21 DocID024402 Rev 8
Figure 26. Reverse recovery current vs. diode
current slope Figure 27. Reverse recovery time vs. diode
current slope
Figure 28. Reverse recovery charge vs. diode
current slope Figure 29. Reverse recovery energy vs. diode
current slope
Irm(A)
0di/dt (A/μs)
500 1000
10
1500 2000
Vr=400V
IF=40A
Tj=175°C
20
30
40
50
60
70
80
90
02500
Tj=25°C
AM17405v1
trr(μs)
0di/dt (A/μs)
500 1000 1500 2000
Vr=400V
IF=40A
Tj=175°C
50
100
150
200
250
02500
Tj=25°C
AM17406v1
Qrr(nC)
0di/dt (A/μs)
500 1000 1500 2000
Vr=400V
IF=40A
Tj=175°C
500
1000
1500
2000
2500
02500
3000
Tj=25°C
AM17407v1
Err(μJ)
0di/dt (A/μs)
500 1000 1500 2000
Vr=400V
IF=40A
Tj=175°C
200
400
600
800
1000
02500
1200
1400
1600
Tj=25°C
AM17408v1
DocID024402 Rev 8 11/21
STGFW40V60DF, STGW40V60DF, STGWT40V60DF Electrical characteristics
Figure 30. Thermal data for IGBT in TO-247 and TO-3P
Figure 31. Thermal data for IGBT in TO-3PF
10
-5
10
-4
10
-3
10
-2
10
-1 t
p
(s)
10
-2
10
-1
K
0.2
0.05
0.02
0.01
0.1
Zth=k Rthj-c
δ=tp/t
tp
t
Single pulse
δ=0.5
ZthTO2T_B
10
-5
10
-4
10
-3
t
p
(s)
10
-2
10
-1
K
0.2
0.05
0.02
0.01
0.1
Zth=k Rthj-c
δ=tp/t
tp
t
Single pulse
δ=0.5
10
-2
10
-1
10
0
ZthTOF3T_A
Electrical characteristics STGFW40V60DF, STGW40V60DF, STGWT40V60DF
12/21 DocID024402 Rev 8
Figure 32. Thermal data for diode
DocID024402 Rev 8 13/21
STGFW40V60DF, STGW40V60DF, STGWT40V60DF Test circuits
3 Test circuits
Figure 33. Test circuit for inductive load
switching Figure 34. Gate charge test circuit
Figure 35. Switching waveform Figure 36. Diode recovery time waveform
AM01504v1
AM01505v1
AM01506v1
90%
10%
90%
10%
VG
VCE
IC
Td(on)
To n
Tr(Ion)
Td(off)
Toff
Tf
Tr(Voff)
Tcross
90%
10%
AM01507v1
IRRM
IF
di/dt
trr
tatb
Qrr
IRRM
t
VF
dv/dt
Package mechanical data STGFW40V60DF, STGW40V60DF, STGWT40V60DF
14/21 DocID024402 Rev 8
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPA CK is an ST tradema rk.
4.1 TO-3PF, STGFW40V60DF
Figure 37. TO-3PF drawing
7627132_D
DocID024402 Rev 8 15/21
STGFW40V60DF, STGW40V60DF, STGWT40V60DF Package mechanical data
Table 8. TO-3PF mechanical data
Dim. mm
Min. Typ. Max.
A5.30 5.70
C2.80 3.20
D3.10 3.50
D1 1.80 2.20
E0.80 1.10
F0.65 0.95
F2 1.80 2.20
G10.30 11.50
G1 5.45
H 15.30 15.70
L 9.80 10 10.20
L2 22.80 23.20
L3 26.30 26.70
L4 43.20 44.40
L5 4.30 4.70
L6 24.30 24.70
L7 14.60 15
N1.80 2.20
R3.80 4.20
Dia 3.40 3.80
Package mechanical data STGFW40V60DF, STGW40V60DF, STGWT40V60DF
16/21 DocID024402 Rev 8
4.2 TO-247, STGW40V60DF
Figure 38. TO-2 47 drawing
0075325_G
DocID024402 Rev 8 17/21
STGFW40V60DF, STGW40V60DF, STGWT40V60DF Package mechanical data
Table 9. TO-247 mechanical data
Dim. mm.
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70
Package mechanical data STGFW40V60DF, STGW40V60DF, STGWT40V60DF
18/21 DocID024402 Rev 8
4.3 TO-3P, STGWT40V60DF
Figure 39. TO-3P drawin g
8045950_A
DocID024402 Rev 8 19/21
STGFW40V60DF, STGW40V60DF, STGWT40V60DF Package mechanical data
Table 10. TO-3P mechanical data
Dim. mm
Min. Typ. Max.
A4.60 5
A1 1.45 1.50 1.65
A2 1.20 1.40 1.60
b 0.80 1 1.20
b1 1.80 2.20
b2 2.80 3.20
c 0.55 0.60 0.75
D 19.70 19.90 20.10
D1 13.90
E 15.40 15.80
E1 13.60
E2 9.60
e 5.15 5.45 5.75
L 19.50 20 20.50
L1 3.50
L2 18.20 18.40 18.60
øP 3.10 3.30
Q5
Q1 3.80
Revision history STGFW40V60DF, STGW40V60DF, STGWT40V60DF
20/21 DocID024402 Rev 8
5 Revision history
Table 11. Document revision history
Date Revision Changes
20-Mar-2013 1 Initial release.
17-Apr-2013 2 Document status promoted from preliminary data to production data.
Added: Section 2.1: Electric al characteristic s (curves)
04-Jun-2013 3 Added minimum and maximum values for V
GE(th)
in
Table 4: Static
characteristics.
11-Sep-2013 4 Updated V
F
value in Table 4: Static characteristics
.
08-Oct-2013 5 Updated title, features and description in cover page.
10-Jan-2014 6 Updated Figure 8: V
CE(sat)
vs. junc tion tempera ture
,
Figure 15: Diod e
V
F
vs. forward current
and Figure 16: Normalized V
GE(th)
vs junction
temperature.
03-Mar-2014 7 Updated test conditions in Table 7: Diode switching characteristics
(inductive load)
.
23-Apr-2014 8
Added new device in TO-3PF.
Updated Table 1: Device summary
,
Table 2: Absolute maximum
ratings
Table 3: Thermal data and Section 4: Package mechanical
data
.
Added Figure 4: Power dissi pation vs. case te mperature f or TO- 3PF,
Figure 5: Collec tor c urrent vs. case temperature for TO-3PF,
Figure 11: Collector current vs. switching frequency for TO-3PF
and
Figure 12: Forward bias safe operating area for TO-247 and TO-3P.
Minor text chan ges .
DocID024402 Rev 8 21/21
STGFW40V60DF, STGW40V60DF, STGWT40V60DF
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