APT11058JFLL 1100V 18A POWER MOS 7 R FREDFET 0.580 S S 27 (R) Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg VDSS ID SO "UL Recognized" ISOTOP (R) * Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package * FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol 2 T- D G D G S All Ratings: TC = 25C unless otherwise specified. Parameter APT11058JFLL UNIT 1100 Volts Drain-Source Voltage 18 Continuous Drain Current @ TC = 25C Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 VGSM Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 463 Watts Linear Derating Factor 3.70 W/C PD TJ,TSTG 1 72 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 1 Volts -55 to 150 C 300 Amps 18 (Repetitive and Non-Repetitive) 1 50 4 mJ 2500 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 1100 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 9A) TYP MAX UNIT Volts 0.580 Ohms Zero Gate Voltage Drain Current (VDS = 1100V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 880V, VGS = 0V, TC = 125C) 1000 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) 100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com A 4-2004 Characteristic / Test Conditions 050-7183 Rev A Symbol APT11058JFLL DYNAMIC CHARACTERISTICS Symbol Ciss Characteristic Test Conditions Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V Crss Reverse Transfer Capacitance f = 1 MHz Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time tr 3 RESISTIVE SWITCHING VGS = 15V VDD = 550V ID = 18A @ 25C Turn-on Switching Energy Eoff Turn-off Switching Energy INDUCTIVE SWITCHING @ 25C 6 Eon Turn-on Switching Energy Eoff Turn-off Switching Energy ns 700 VDD = 733V, VGS = 15V 210 ID = 18A, RG = 5 INDUCTIVE SWITCHING @ 125C 6 nC 12 RG = 0.6 Eon UNIT pF 120 160 20 105 16 8 40 VDD = 550V Fall Time MAX 4135 680 ID = 18A @ 25C Turn-off Delay Time tf TYP VGS = 10V Rise Time td(off) MIN J 1450 VDD = 733V VGS = 15V ID = 18A, RG = 5 270 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 (Body Diode) 72 VSD Diode Forward Voltage 2 (VGS = 0V, IS = -18A) 1.3 Volts dv/ Peak Diode Recovery 18 V/ns dt dv/ dt 18 5 t rr Reverse Recovery Time (IS = -18A, di/dt = 100A/s) Tj = 25C 300 Tj = 125C 600 Q rr Reverse Recovery Charge (IS = -18A, di/dt = 100A/s) Tj = 25C 1.7 Tj = 125C 4.47 Peak Recovery Current Tj = 25C 11.4 Tj = 125C 16.4 IRRM (IS = -18A, di/ dt = 100A/s) Amps ns C Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN RJC Junction to Case RJA Junction to Ambient TYP MAX 0.27 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.20 0.7 0.15 0.5 0.10 0.3 0.05 0 Note: PDM Z JC, THERMAL IMPEDANCE (C/W) 050-7183 Rev A 4-2004 0.30 0.9 t1 t2 0.1 SINGLE PULSE Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 0.05 10-5 10-4 C/W 4 Starting Tj = +25C, L = 15.43mH, RG = 25, Peak IL = 18A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID18A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.25 UNIT 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10 Typical Performance Curves 0.0409 Power (watts) 0.225 0.00361 0.0246F 0.406F 148.0F ID, DRAIN CURRENT (AMPERES) 40 RC MODEL Junction temp. (C) Case temperature. (C) VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE 40 TJ = -55C 30 TJ = +25C 20 TJ = +125C 10 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 14 12 10 8 6 4 2 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 3 I V D GS 20 6V 15 10 5.5V 5 5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 NORMALIZED TO V = 10V @ 9A GS 1.30 1.20 VGS=10V 1.10 VGS=20V 1.00 0.90 0.80 0 5 10 15 20 25 30 35 40 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 = 9A = 10V 2.0 1.5 1.0 0.5 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 25 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 4-2004 ID, DRAIN CURRENT (AMPERES) 16 0 -50 6.5V 30 1.15 18 2.5 35 7V 050-7183 Rev A 0 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) 50 VGS =15,10 & 7.5V 0 FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 60 APT11058JFLL 45 10,000 Ciss 100S 10 5 1mS TC =+25C TJ =+150C SINGLE PULSE 1 D = 18A VDS= 220V 12 VDS= 550V 8 VDS= 880V 4 0 0 40 80 120 160 200 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE td(off) V DD TJ =+150C TJ =+25C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE R G 50 = 733V tr and tf (ns) td(on) and td(off) (ns) 80 = 5 T = 125C J 60 L = 100H 40 tf 40 V DD R G 30 = 733V = 5 T = 125C J L = 100H 20 tr 10 td(on) 0 2500 5 0 15 20 25 30 35 ID (A) FIGURE 14, DELAY TIMES vs CURRENT V DD R G 10 15 20 25 30 35 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 5 10 2500 = 733V J SWITCHING ENERGY (J) L = 100H E ON includes diode reverse recovery. 1500 Eon 1000 500 Eoff 0 0 = 5 T = 125C 2000 SWITCHING ENERGY (J) 100 60 20 4-2004 200 70 100 0 Crss 100 10 120 0 Coss IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 16 I 1,000 10mS 1 10 100 1100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 050-7183 Rev A APT11058JFLL 20,000 OPERATION HERE LIMITED BY RDS (ON) C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 72 5 10 15 20 25 30 35 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 2000 Eon 1500 Eoff 1000 V I DD D = 733V = 20A T = 125C 500 J L = 100H E ON includes 0 diode reverse recovery. 0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE Typical Performance Curves APT11058JFLL 90% 10% Gate Voltage Gate Voltage T 125C J TJ125C td(off) td(on) Drain Voltage 90% tr 5% tf 90% Drain Current 5% 10% 10% 0 Drain Voltage Switching Energy Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions Drain Current Figure 19, Turn-off Switching Waveforms and Definitions APT30DF120 V DD IC V CE G D.U.T. Figure 20, Inductive Switching Test Circuit SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Source 30.1 (1.185) 30.3 (1.193) Drain * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source Gate Dimensions in Millimeters and (Inches) ISOTOP(R) is a Registered Trademark of SGS Thomson. APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 4-2004 r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 050-7183 Rev A 7.8 (.307) 8.2 (.322)