050-7183 Rev A 4-2004
APT11058JFLL
1100V 18A 0.580ΩΩ
ΩΩ
Ω
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
G
D
S
SOT-227
GS
S
D
ISOTOP
®
"UL Recognized"
• Lower Input Capacitance • Increased Power Dissipation
• Lower Miller Capacitance • Easier To Drive
• Lower Gate Charge, Qg • Popular SOT-227 Package
•FAST RECOVERY BODY DIODE
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 9A)
Zero Gate Voltage Drain Current (VDS = 1100V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 880V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BVDSS
RDS(on)
IDSS
IGSS
VGS(th)
UNIT
Volts
Ohms
µA
nA
Volts
MIN TYP MAX
1100
0.580
250
1000
±100
35
APT11058JFLL
1100
18
72
±30
±40
463
3.70
-55 to 150
300
18
50
2500
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
POWER MOS 7 R FREDFET
050-7183 Rev A 4-2004
DYNAMIC CHARACTERISTICS APT11058JFLL
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -18A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -18A, di/dt = 100A/µs)
Reverse Recovery Charge
(IS = -18A, di/dt = 100A/µs)
Peak Recovery Current
(IS = -18A, di/dt = 100A/µs)
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
µC
Amps
MIN TYP MAX
18
72
1.3
18
Tj = 25°C 300
Tj = 125°C 600
Tj = 25°C 1.7
Tj = 125°C 4.47
Tj = 25°C 11.4
Tj = 125°C 16.4
Symbol
RθJC
RθJA
MIN TYP MAX
0.27
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 15.43mH, RG = 25Ω, Peak IL = 18A
5dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID18A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Eon
Eoff
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 550V
ID = 18A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
VDD = 550V
ID = 18A @ 25°C
RG = 0.6Ω
INDUCTIVE SWITCHING @ 25°C
VDD = 733V, VGS = 15V
ID = 18A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
VDD = 733V VGS = 15V
ID = 18A, RG = 5Ω
MIN TYP MAX
4135
680
120
160
20
105
16
8
40
12
700
210
1450
270
UNIT
pF
nC
ns
µJ
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
PDM
SINGLE PULSE
ZθJC, THERMAL IMPEDANCE (°C/W)
10-5 10-4 10-3 10-2 10-1 1.0 10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.30
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
050-7183 Rev A 4-2004
Typical Performance Curves APT11058JFLL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES)
(NORMALIZED)
VGS(TH), THRESHOLD VOLTAGE BVDSS, DRAIN-TO-SOURCE BREAKDOWN RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES)
(NORMALIZED) VOLTAGE (NORMALIZED)
5.5V
6V
6.5V
5V
VGS =15,10 & 7.5V
VGS=10V
VGS=20V
TJ = +125°C
TJ = +25°C
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT
TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
7V
0 5 10 15 20 25 30
012345678 0510152025303540
25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
60
50
40
30
20
10
0
18
16
14
12
10
8
6
4
2
0
3
2.5
2.0
1.5
1.0
0.5
0
ID = 9A
VGS = 10V
NORMALIZED TO
VGS = 10V @ 9A
45
40
35
30
25
20
15
10
5
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.0409
0.225
0.00361
0.0246F
0.406F
148.0F
Power
(watts)
Junction
temp. (°C)
RC MODEL
Case temperature. (°C)
050-7183 Rev A 4-2004
APT11058JFLL
Crss
Ciss
Coss
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
IDR, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)
1 10 100 1100 0 10 20 30 40 50
0 40 80 120 160 200 0.3 0.5 0.7 0.9 1.1 1.3 1.5
72
10
5
1
16
12
8
4
0
TC =+25°C
TJ =+150°C
SINGLE PULSE
10mS
1mS
100µS
TJ
=+150°C
TJ
=+25°C
VDS= 550V
VDS= 220V
VDS= 880V
ID = 18A
20,000
10,000
1,000
100
10
200
100
10
1
OPERATION HERE
LIMITED BY RDS (ON)
ID (A) ID (A)
FIGURE 14, DELAY TIMES vs CURRENT FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A) RG, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
VDD = 733V
RG = 5Ω
TJ = 125°C
L = 100µH
Eon
Eoff
tr
tf
SWITCHING ENERGY (µJ) td(on) and td(off) (ns)
SWITCHING ENERGY (µJ) tr and tf (ns)
0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35
0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35 40 45 50
VDD = 733V
ID = 20A
TJ = 125°C
L = 100µH
EON includes
diode reverse recovery.
td(on)
td(off)
Eon
Eoff
120
100
80
60
40
20
0
2500
2000
1500
1000
500
0
VDD = 733V
RG = 5Ω
TJ = 125°C
L = 100µH
VDD = 733V
RG = 5Ω
TJ = 125°C
L = 100µH
EON includes
diode reverse recovery.
70
60
50
40
30
20
10
0
2500
2000
1500
1000
500
0
050-7183 Rev A 4-2004
Typical Performance Curves APT11058JFLL
SOT-227 (ISOTOP®) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source Drain
Gate
*
r = 4.0 (.157)
(2 places) 4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
ISOTOP®
is a Registered Trademark of SGS Thomson.
I
C
D.U.T.
APT30DF120
V
CE
Figure 20, Inductive Switching Test Circuit
G
V
DD
Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions
Switching Energy
Drain Current
Drain Voltage
Gate Voltage TJ125°C
10%
td(on)
90%
5%
tr
5% 10%
90%
td(off)
tf
10%
0
Drain Current
Drain Voltage
Gate Voltage
TJ125°C
Switching Energy
90%
