NTD20P06L, NTDV20P06L Power MOSFET -60 V, -15.5 A, Single P-Channel, DPAK Features * * * * Withstands High Energy in Avalanche and Commutation Modes Low Gate Charge for Fast Switching AEC Q101 Qualified - NTDV20P06L These Devices are Pb-Free and are RoHS Compliant Applications http://onsemi.com V(BR)DSS RDS(on) TYP ID MAX (Note 1) -60 V 130 mW @ -5.0 V -15.5 A * Bridge Circuits * Power Supplies, Power Motor Controls * DC-DC Conversion P-Channel D MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Drain-to-Source Voltage Gate-to-Source Voltage Continuous Symbol Value Unit VDSS -60 V VGS $20 V G S Non-Repetitive tp v10 ms VGSM $30 Continuous Drain Current (Note 1) Steady State TA = 25C ID -15.5 Power Dissipation (Note 1) Steady State TA = 25C PD 65 W 1 2 IDM $50 A Operating Junction and Storage Temperature TJ, TSTG -55 to 175 C DPAK CASE 369C STYLE 2 Single Pulse Drain-to-Source Avalanche Energy (VDD = 25 V, VGS = 5 V, IPK = 15 A, L = 2.7 mH, RG = 25 W) EAS 304 mJ Lead Temperature for Soldering Purposes (1/8" from case for 10 s) TL 260 C tp = 10 ms 4 Parameter Symbol Max Unit Junction-to-Case (Drain) RqJC 2.3 C/W Junction-to-Ambient - Steady State (Note 1) RqJA 80 Junction-to-Ambient - Steady State (Note 2) RqJA 110 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces) 2. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.412 in sq.) (c) Semiconductor Components Industries, LLC, 2011 August, 2011 - Rev. 6 4 1 THERMAL RESISTANCE RATINGS 1 3 4 Drain 2 1 3 Drain Gate Source 4 Drain AYWW T20 P06LG Pulsed Drain Current MARKING DIAGRAMS A AYWW T20 P06LG Parameter 2 3 IPAK/DPAK CASE 369D STYLE 2 20P06L A Y WW G 1 2 3 Gate Drain Source Device Code = Assembly Location = Year = Work Week = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: NTD20P06L/D NTD20P06L, NTDV20P06L ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -250 mA -60 -74 V Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ -64 mV/C OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current VGS = 0 V, VDS = -60 V TJ = 25C -1.0 TJ = 150C -10 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = -250 mA 100 mA nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Gate Threshold Temperature Coefficient VGS(TH)/TJ Drain-to-Source On Resistance RDS(on) Forward Transconductance gFS Drain-to-Source On-Voltage VDS(on) -1.0 -1.5 -2.0 3.1 VGS = -5.0 V, ID = -7.5 A 0.130 VGS = -5.0 V, ID = -15 A 0.143 VDS = -10 V, ID = -7.5 A 11 VGS = -5.0 V, ID = -7.5 A V mV/C 0.150 W S TJ = 25C -1.2 TJ = 150C -1.9 V CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge 1190 207 300 66 120 15 26 nC 11 20 ns 90 180 28 50 70 135 TJ = 25C 1.5 2.5 TJ = 150C 1.3 VGS = 0 V, f = 1 MHz, VDS = -25 V QG(TOT) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD pF 740 VGS = -5.0 V, VDS = -48 V, ID = -18 A 4.0 7.0 SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) VGS = -5.0 V, VDD = -30 V, ID = -15 A, RG = 9.1 W tf DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = -15 A 60 VGS = 0 V, dIS/dt = 100 A/ms, IS = -12 A QRR http://onsemi.com 2 ns 39 21 0.13 3. Pulse Test: pulse width v 300 ms, duty cycle v 2% 4. Switching characteristics are independent of operating junction temperatures V nC NTD20P06L, NTDV20P06L TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 30 VGS = -5 V VGS = -8 V 25 VGS = -7 V VGS = -4.5 V 20 VGS = -4 V 15 VGS = -3.5 V 10 VGS = -3 V 5 TJ = 25C 0 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) TJ = -55C VGS = -5.5 V VGS = -9 V 1 2 3 4 5 6 7 8 9 20 10 VDS w 10 V 0 3 4 5 6 7 Figure 2. Transfer Characteristics VGS = -5 V TJ = 125C 0.25 0.2 0.15 TJ = 25C 0.1 TJ = -55C 0.05 0 5 10 15 20 25 0.15 VGS = -10 V 0.1 0.075 0.05 0.025 0 0 -ID, LEAKAGE (nA) 0.6 3 6 9 12 15 18 -ID, DRAIN CURRENT (A) VGS = 0 V ID = -7.5 A VGS = -5 V 0.8 24 VGS = -5 V 0.125 10000 1 21 0.2 0.175 Figure 4. On-Resistance versus Drain Current and Gate Voltage 2 1.2 9 TJ = 25C Figure 3. On-Resistance versus Drain Current and Temperature 1.4 8 0.25 0.225 30 -ID, DRAIN CURRENT (A) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 2 Figure 1. On-Region Characteristics 0.3 1.6 1 -VDS, GATE-TO-SOURCE VOLTAGE (V) 0.35 1.8 TJ = 125C -VDS, DRAIN-TO-SOURCE VOLTAGE (V) 0.4 0 TJ = 25C 10 0.5 0.45 30 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) -ID, DRAIN CURRENT (A) 35 40 VGS = -6 V VGS = -10 V -ID, DRAIN CURRENT (A) 40 0.4 TJ = 150C 1000 TJ = 125C 100 10 0.2 0 -50 1 -25 0 25 50 75 100 125 150 5 10 15 20 25 30 35 40 45 50 55 TJ, JUNCTION TEMPERATURE (C) -VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 3 60 NTD20P06L, NTDV20P06L C, CAPACITANCE (pF) 2400 2200 2000 VDS = 0 V 1800 1600 1400 Ciss 1200 Crss 1000 800 TJ = 25C VGS = 0 V Ciss 600 Coss 400 200 0 Crss -10 -5 0 -VGS 5 10 15 20 25 -VDS GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 60 ID = -15 A TJ = 25C 50 6.25 5.0 40 QG VDS 3.75 Qgs VGS QGD 30 2.5 20 1.25 10 0 0 0 4 8 12 VDS, DRAIN-TO-SOURCE VOLTAGE (V) -VGS, GATE-TO-SOURCE VOLTAGE (V) 7.5 16 Qg, TOTAL GATE CHARGE (nC) Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge 1000 20 -IS, SOURCE CURRENT (A) t, TIME (nS) VDD = -30 V ID = -15 A VGS = -5 V tR 100 tF td(off) 10 td(on) 1 1 10 Rg, GATE RESISTANCE (W) 100 VGS = 0 V TJ = 25C 15 10 5 0 0 Figure 9. Resistive Switching Time Variation versus Gate Resistance 0.25 0.5 0.75 1 1.25 1.5 -VSD, SOURCE-TO-DRAIN VOLTAGE (V) 1.75 Figure 10. Diode Forward Voltage versus Current http://onsemi.com 4 -ID, DRAIN CURRENT (A) 1000 VGS = -15 V Single Pulse TC = 25C 100 100 10 1 10 ms 1 dc RDS(on) Limit Thermal Limit Package Limit 0.1 0.1 1 10 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) NTD20P06L, NTDV20P06L 350 ID = -15 A 300 250 200 150 100 50 0 100 25 Rqjc(C/W), EFFECTIVE TRANSIENT THERMAL RESPONSE Figure 11. Maximum Rated Forward Biased Safe Operating Area 50 75 100 125 TJ, STARTING JUNCTION TEMPERATURE (C) 150 Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature 10 D = 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.000001 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 t, TIME (s) Figure 13. Thermal Response ORDERING INFORMATION Device Shipping Package NTD20P06LG NTD20P06LT4G 75 Units / Rail DPAK (Pb-Free) 2500 / Tape & Reel NTDV20P06LT4G 2500 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NTD20P06L, NTDV20P06L PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C-01 ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 --- 0.040 0.155 --- STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z 6.17 0.243 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 --- 1.01 3.93 --- NTD20P06L, NTDV20P06L PACKAGE DIMENSIONS IPAK CASE 369D-01 ISSUE C C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 -T- SEATING PLANE K J F D G H 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN T ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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